A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIO NS MINI MUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 40 V
BVCEO IC = 1.0 mA 28 V
BVEBO IE = 1.0 mA 3.5 V
ICBO VCB = 24 V 0.5 mA
hFE VCE = 5.0 V IC = 100 mA 20 120 ---
COB VCB = 24 V f = 1.0 MHz 5.0 pF
PGVCC = 24 V ICQ = 125 mA f = 960 MHz
POUT = 1.0 W 10 dB
NPN SILICON RF POWER TRANSISTOR
CBSL1SL
DESCRIPTION:
The ASI CBSL1SL is Designed f or
Class A, Cellular Base Staion
Applications up to 960 MHz.
FEATURES:
• Class A Operation
• PG = 10 dB at 1.0 W/960 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC0.250 A
VCBO 40 V
VCEO 28 V
VEBO 3.5 V
PDISS 7.0 W @ T C = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 25 OC/W
PACKAGE STYLE .280 4L PILL
ORDER CODE: ASI10578
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
inches / mm
1.05 5 / 26.80
DIM
.220 / 5.59 .230 / 5.84
.118 / 3.00
D
EF
ØB
ØC
A
CB
E
E
