400 MHz – 4 GHz Low Noise Amplifier
Preliminary Technical Data
ADL5523
Rev. PrA
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Specifications subject to change without notice. No license is granted by implication
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FEATURES
17.5 dB Gain at 1950MHz
Matched 50-Ω input and output
Noise Figure of1.0 dB 1950MHz
OIP3 of 33.7dBm typ at 1950MHz
Single 5V Supply Operation
Operating current of 65ma at +5V
LFCSP 3x3 mm Package
GENERAL DESCRIPTION
The ADL5523 is a high performance GaAs pHEMT low-noise
amplifier. It provides high gain and low noise figure for single
down-conversion IF sampling receiver architectures as well as
direct down conversion receivers.
The ADL5523 amplifier comes in a compact, thermally
enhanced 3x3mm LFCSP package and operates over the
temperature range of −40°C to +85°C.
FUNCTIONAL BLOCK DIAGRAM
BIAS ADL5523
INP OUT
VDD
GND GND
VBIAS
Figure 1.
.
ADL5523 Preliminary Technical Data
Rev. PrA | Page 2 of 6
SPECIFICATIONS
VS = 5 V, T = 25°C, ZS = ZL = 50Ω , fC= 1950MHz
Table 1.
Parameter Conditions Min Typ Max Unit
Input return loss External match 14 dB
Output return loss External match 13 dB
Gain 17.5 dB
Gain Flatness In the [1920 – 1980] frequency band 0.015 dB/MHz
Gain Tempco In the [1920 – 1980] frequency band 0.011 dB/°C
Noise Figure 1.0 dB
Output IP3 33.7 dBm
Output 1 dB Compression Point 21.9 dBm
S12 Isolation 22 dB
POWER-INTERFACE
Supply Voltage 4.5 5 5.5 V
Current Consumption 65 mA
Preliminary Technical Data ADL5523
Rev. PrA | Page 3 of 6
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage, VPOS 5.5 V
Max RF Input Level TBD
Internal Power Dissipation TBD mW
θJA (Exposed paddle soldered down) TBD mW
θJA (Exposed paddle not soldered down) TBD°C/W
θJC (At exposed paddle) TBD°C/W
Maximum Junction Temperature TBD°C/W
Operating Temperature Range TBD°C
Storage Temperature Range –40°C to +85°C
Lead Temperature Range
(Soldering 60 sec)
–65°C to +150°C
Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those
listed in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
ADL5523 Preliminary Technical Data
Rev. PrA | Page 4 of 6
PIN CONFIGURATION AND FUNCTIONAL DESCRIPTIONS
INP
1
2
3
45
6
7
8
OUT
NC NC
VBIAS
NCNC
VDD
ADL5523
top view
(not to scale)
Exposed pad
Figure 2. 8-Lead LFCSP
Table 3. Pin Function Descriptions- 8 Lead CSP
Pin No. Mnemonic Description
1 VBIAS Bias: Internal DC bias
2 INP RF Input: Must be AC-coupled.
3,4,5,6 NC NC: No internal connection
7 OUT RF Output: Must be AC-coupled.
8 VDD Supply: VDD bias needs to be bypassed to ground using
low-inductance capacitors.
Exposed pad EP Exposed Paddle: Connect to a low impedance ground plane
Preliminary Technical Data ADL5523
Rev. PrA | Page 5 of 6
TYPICAL PERFORMANCE
CHARACTERISTICS
62
64
66
68
70
72
74
76
-40-30-20-100102030405060708090
Tem perature - de gC
IPOS - mA
Figure 3. ADL5523 Current vs. Temperature
-5
0
5
10
15
20
25
-25 -20 -15 -10 -5 0 5 10
Pin - dBm
Po u t (dBm), Gain (dB)
Output Pow er (-40°C
+25°C
+85°C)
Gain (-40°C
+25°C
+85°C)
Figure 4. Output Power and Gain vs. Temperature
14
16
18
20
22
24
26
28
30
1920 1930 1940 1950 1960 1970 1980
Freq - M Hz
Gain, P1dB - dB(m)
0
5
10
15
20
25
30
35
40
OIP 3 - dBm
Gain (-40°C
+25°C
+85°C)
P1d B (-40°C
+25°C
+85°C)
OI P 3 (-40°C
+25°C
+85°C)
Figure 5. Gain, P1dB, OIP3 vs. Frequency
0
2
4
6
8
10
12
14
16
18
20
400 900 1400 1900 2400 2900
Frequency - MHz
Gain (dB)
Figure 6. Gain vs. Frequency, Complete Frequency Range, 5 Parts
25
26
27
28
29
30
31
32
33
34
35
36
37
38
-8-6-4-202468101214161820
Pout - dBm
OIP3 - dBm
+85° C (1920MHz
1950MHz
1980MHz)
+25° C (1920M Hz
1950MHz
1980MHz)
-40°C (1920MHz
1950MHz
1980MHz)
Figure 7.O IP3 vs. Output Power, Temperature and Frequency
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1920 1930 1940 1950 1960 1970 1980
Frequency - MHz
Noise Figure - dB
Figure 8.Distribution of Noise Figure for Five Parts, 1920 to 1980 MHz
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
400 900 1400 1900 2400 2900
Frequency - MHz
Noise Figure - dB
Figure 9. Distribution of Noise Figure for Five Parts, Complete Frequency
Range
-30
-25
-20
-15
-10
-5
0
5
10
15
20
1920 1930 1940 1950 1960 1970 1980
Freq - MHz
S-parameters - dB
S21
S11
S12
S22
Figure 10. Typical S Parameters, 1920 to 1980 MHz
ADL5523 Preliminary Technical Data
Rev. PrA | Page 6 of 6
OUTLINE DIMENSIONS
ORDERING GUIDE
noitpO egakcaP noitpircseD egakcaP egnaR erutarepmeT ledoM
ADL5523ACPZ-R71 2-8-PC leeR dna epaT ”7 C°58+ ot C°04–
ADL5523ACPZ-WP1 2-8-PC kcaP elffaW C°58+ ot C°04–
draoB noitaulavE ZLAVE-3255LDA
1 Z = Pb free part
Figure 3. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]
3mm × 3 mm Body, Very Thin, Dual Lead
CP-8-2
Dimensions shown in millimeters
©2007 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
PR06829-0-5/07(PrA)
022107-A
1
EXPOSED
PAD
(BOTTOM VIEW)
0.50
BSC
0.60 MAX
PIN 1
INDICATOR
0.50
0.40
0.30
TOP
VIEW
12° MAX 0.70 MAX
0.65 TYP
0.90 MAX
0.85 NOM
0.30
0.23
0.18
0.05 MAX
0.01 NOM
0.20 REF
1.89
1.74
1.59
4
1.60
1.45
1.30
3.25
3.00 SQ
2.75
2.95
2.75 SQ
2.55
5
8
PIN 1
INDICATOR
