MOTOR OLA m= SEMICONDUCTOR xx TECHNICAL DATA Designers Data Sheet 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P protection diodes. Extremely Low ve Low Power Loss/High Efficiency AXIAL LEAD RECTIFIERS ...employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity @ Low Stored Charge, Majority Carrier Conduction SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30,40 VOLTS to facilitate warst-case design. Designer's Data for Worst-Case Conditions The Designers Data sheets permit the design of most circuits entirely from the informa- tion presented. Limit curvesrepresenting boundaries on device characteristicsare given *MAXIMUM RATINGS 1N5820 | 1N5821 | 1N5822 Rating Symbol | MBR320P| MBA330P| MBA340P] Unit Peak Repetitive Reverse Voltage VRAM 20 30 40 Vv Working Peak Reverse Voltage VawM DC Blocking Voitage VA Non-Repetitive Peak Reverse Voltage VRSM 24 36 48 Vv = | RMS Reverse Voltage VaiRMs) 14 21 28 Vv Average Rectified Forward Current{2) lo $< <$<$==$_ 47=_ A VRtequiv) < 0-2 Vatdc) Te = 95C (Rigja = 28CM, P.C. Board Mounting, see Note 2} Ambient Temperature Ta 90 85 80 % Rated Vide}. PF(AV) = 9 Resa = 28C Non-Repetitive Peak Surge Current lesna |-te- 80 (for one cycle} | A (Surge applied at rated load condi- tions, half wave, single phase 60 Hz, TL = 75C) STYLE 1: PIN 1, CATHODE K 4 2. ANODE 4__f} NOTES: 1, DIMENSIONING & TOLERANCING PER ANSI Y145, 1982. 2. CONTROLLING DIMENSION: INCH. CASE 267-03 PLASTIC Operating and Storage Junction Ty. Ts1g |=e_ - 65 to +125 c Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature TJipk) 150 C {Forward Current Applied} *THERMAL CHARACTERISTICS (Note 2) Characteristic Symbol Max Unit Thermal Resistance, Junction ta Ambient Rasa 28 cw *ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) (2) Characteristic Symbol | 1N5820 | 1N5821 | 1N5822 | MBA---P | Unit Maximum Instantaneous VE Vv Forward Voltage (1) lig = 1.0 Amp) 0.370 0.380 0.390 0,400 {if = 3.0 Amp) 0.475 0.500 0.525 0.550 tig = 9.4 Amp) 0.850 0.900 0.950 0.950 Maximum Instantaneous in mA Reverse Current @ Rated de Voltage {1) TL = 26C 2.0 2.0 2.0 2.0 TL = 100C 20 20 20 20 {1) Pulse Test: Pulse Width = 300 ws, Duty Cycle = 2.0%. (2) Lead Temperature reference is cathode lead 1/32" from case. "Indicates JEDEC Registered Data for 1N5820-22. MECHANICAL CHARACTERISTICS Transfer molded plastic FINISH. 2.0... eee All external surfaces corrosion-resistant and the terminal leads are readily solderable POLARITY ...... .. Cathode indicated by polarity band MOUNTING POSITIONS .....--.-+. Any SOLDERING ,..... 220C 1/16" from case for ten seconds" 1N5820, 1N5821, 1N5822, MBR320P, MBR330P, MBR340P NOTE 1 DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 Vay. Proper derating may be accom- plished by use of equation {1}. TA{max) * Tdimax} ~ Fa jaPr (av) ~ ResaPriav) where Ta{max) Maximum allowable ambient temperature Titmax) * Maximum allowable junction temperature (125C or the temperature at which thermal runaway occurs, whichever is lowest} PFtay) = Average forward power dissipation PR(AV) = Average reverse power dissipation Aig ja 7 Junction-to-ambient thermal resistance Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway Into consideration. The figures solve for a reference temperature as determined by equation {2}, ti) TR = Tyimax) BesaPRIAV) {2) Substituting equation (2) into equation (1) yields: TA (max) TR ~ Re JAPFIAV) (3) tnspection of equations (2) and (3) reveals that Tm is the ambient temperature at which thermal runaway occurs or where Ty = 125C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115C, The data of Figures 1, 2, and 3 is based upon de conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent de voltage to use for conservative design, that is: VAtequiv) Vir) x F (4) The factor F is derived by considering the properties of the various rectifier circuits and tha reverse characteristics of Schottky diodes, EXAMPLE: Find Ta{max) for 1N5821 operated in a 12-volt de supply using a bridge circuit with capacitive filter such that loc = 2.0 A (letay) = 1.0 Al, Wen/ltayvy = 10, Input Voltage = 10 Virms). Raga = 40C. Step 1, Find Vp (equiv)- Read F = 0.65 from Table 1, OF VRlequiv) = {1.41 }(10)(0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read Tq = 108C @Vp 29.2 VandReja= 40C/W. Step 3. Find Pe(ay) from Figure 6. **Read Priay) 2 0.85 W @ Kem Av} Step 4, Find Tatmax) from equation (3). Tat{max) = 108 ~ (0.85) (40) = 74C. **Values given are for the 1N5821, Power Is slightly lower for the 1N5820 hecause of its lower forward voltage, and higher for the 1N5822, Variations will be similar for the MBA-prefix devices, using Pe(ay} from Figure 7. = 10 and Ipfayy = t.0A. TABLE 1 VALUES FOR FACTOR F Circuit Full Wave, Full Wave, Half Wave Bridge Center Tappad*t Load Resistive | Capacitive | Aesistive | Capacitive Resistive | Capacitive Sine Wave 05 13 05 0.65 1.0 1.3 Square Wave 0.75 15 0.75 0.75 15 5 Note that VA(pK) = 2.0 Vin(pK)- tUse line to center tap voltage for Vin- FIGURE 1 MAXIMUM REFERENCE TEMPERATURE 1N5820/MBR320P 16 10 Tr, REFERENCE TEMPERATURE (C) 40 5.0 1.0 w 20 Va. REVERSE VOLTAGE {VOLTS) FIGURE 3 MAXIMUM REFERENCE TEMPERATURE IN5822/MBR340P 3.0 Tr. REFERENCE TEMPERATURE (C) 40 20 Vag. REVERSE VOLTAGE (VOLTS) 10 5 FIGURE 2 MAXIMUM REFERENCE TEMPERATURE 1N5821/MBR330P 12! : 20 15 95 Tr. REFERENCE TEMPERATURE (C) 40 5.0 7 Va, REVERSE VOLTAGE (VOLTS) FIGURE 4 STEADY-STATE THERMAL RESISTANCE MAXIMUM TYPICAL 3 5 a0 ia as to ze wo 5 32 = Both Leads to Heat Sink, Equal Length L, LEAD LENGTH (INCHES)1N5820, 1N5821, 1N5822, MBR320P, MBR330P, MBR340P FIGURE 5 -- THERMAL RESPONSE 10 ; SEH ET ++ ++ | | ad pro Po DUFY CYCLE tp/ty - LEAD LENGTH = 1/4" ~4 ve oe [L PEAK POWER, Ppk, is peak of an 5 TIME equivalent square power pulse. Lt = 03h i a zg Po aT 20 7 A ID + (1-D)- - A es Pan Poe Rast [0 + (1~O)- ey + tp) + ftp) - et) LH The temperature of the lead should be measured _|__| z 2 . . wee at) using a thermocouple placed on the lead a3 close as ES ask AT = the increase in junction temperature above the possible'to the tie point. The thermal mats con- - a= f-- lead tempesature. . = nected to the tie point is normally large enough 4 8 ie _ Hy = ni lized valye ol fent thermal so that it will mot sgnificantly respond to heat -- z= O.05/- af time, t, Le: tr fulges gi din the diode as a result of pulsed [ | = be aaah ttt tp) = feed valueol] i steady-state conditions ace achieved. 3 93 teansient thermal easistance | 4 Using the measured vatue af TL, the junction tem- || = 9.02} it time ty + ty, ate. fae may be by: 4 on {pry T= Th + STIL Lott 0.01 Lt PTY pp 0.2 0.6 1.0 2.0 5.0 10 20 50 100 200 00 1.0k 2.0k .0k 10k 20k 4, TIME {ms} FIGURE 6 FORWARD POWER DISSIPATION NOTE 3 APPROXIMATE THERMAL CIRCUIT MODEL 1N5820-22 (EM) a (Resistive Load} Vv) im fo) Loe J Loads Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found, For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink, Terms in the model Peavy), AVEAAGE POWER DISSIPATION {WATTS} 10 0 signify: If{AV], AVERAGE FORWARD CURRENT (AMP) Ta, = Ambient Temperature Tc = Case Temperature TL = Lead Temperatdre Ty = Junction Temperature FIGURE 7 FORWARD POWER DISSIPATION Regs = Thermal Resistance, Heat Sink to Ambient MBR320P-340P Rev = Thermal Resistance, Lead to Heat Sink B 10 Rg J = Thermal Resistance, Junction to Case ee 70 Pp = Total Power Dissipation =P + Pq = so Pr = Forward Power Dissipation ae Sine Wave i * c {Resistive Load) PR = Reverse Power Dissipation Ee 3.0 av) (Subscripts (A) and (K) refer to anode and cathode sides, respec- 3 2.0} Capacitive Loads - AFMI 5 20 tively.) Values for thermal resistance components are: 3 Navy Ro. = 42C/Wiin typically and 48C/Wiin maximum Soo Ray = 10C/W typically and 16C/W maximum S a7 The maximum lead ternperature may be found as follows: o Os Te 2 Tyimax) - STIL & where ATy_ AguL* Pp 2 03 = 02 = ue - 0,1 0.1 0.2 05 07 10 aS. Mounting Method 1 P.Cc. Board where available copper surface Tetay) AVERAGE FORWARD CURRENT {AMP} Mounting Method 3 P.C. Board with 1 rt with 2-1/2" 2-1/2" 3 copper surface. is small. NOTE 2 MOUNTING DATA Data shawn for thermal resistance junction-to-ambient (Aig JA) for the mountings shown is to be used as typical guideline values ET ee for preliminary engineering, of in case the tie point temperature L= wor cannot be measured. Mounting Method 2 TYPICAL VALUES FOR Agya IN STILL AIR Vector Push-In L 7 Terminals T-28 Mounting Mathod va Viz a4 1 = 5! = APE ZEEE, wad 5a 52 61 63 WE. Board Ground Plane 2 3 21N5820, 1N5821, 1N5822, MBR320P, MBR330P, MBR340P FIGURE 8 TYPICAL FORWARD VOLTAGE FIGURE 9 MAXIMUM NON-REPETITIVE SURGE CURRENT 100 30 20 1 Cycle legm. PEAK HALF-WAVE CURRENT (AMP) Surge at Rated Conditions NUMBER OF CYCLES FIGURE 10 TYPICAL REVERSE CURRENT 400 ig, INSTANTANEOUS FORWARD CURRENT (AMP) Ty = 125C - - 0.2 Ip, REVERSE CURRENT (mA) o4 vf, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.05 0.02 N58 21 /MBRIIOP + 0.01 o0 640 80 2 16 28 40 Vg. REVERSE VOLTAGE {VOLTS} FIGURE 11 TYPICAL CAPACITANCE NOTE 4 HIGH FREQUENCY OPERATION =z in Since current flow in a Schottky rectifier is the result of = majority carrier conduction, it is mot subject to junction diode 2 200 forward and reverse recovery transients due to minority carrier = injection and stored charge, Satisfactory circuit analysis work = may be performed by using a model consisting of an ideal diode 3s in parallel with a variable capacitance, (See Figure 11.) uo s a oa 5.0 10 Vg, REVERSE VOLTAGE (VOLTS)