G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications . These
linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,
a CDS circuit, an offset compensation circuit, a shift register and a timing generator. These sensors deliver high sensitivity and stable operation in
the near infrared spectral range. The package is hermetically sealed for high reliability and the window has an anti-reflective coating for efficient
light detection.
Signal processing circuits on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by supplying an exter nal voltage. The
image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF.
Features
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Wide dynamic range
l
Low noise and low dark current
l
Selectable gain
l
Anti-saturation circuit
l
CDS circuit *
1
l
Offset compensation circuit
l
Simple operation (by built-in timing generator) *
2
l
High resolution: 25 µm pitch (512 ch)
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Low cross-talk
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256 ch: 1 video line
512 ch: 2 video lines
Applications
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DWDM wavelength monitor
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Optical spectrum analyzer
IMAGE SENSOR
InGaAs linear image sensor
Image sensor for DWDM wavelength monitor
G8050 to G8053 series
■ Selection guide
Type No. Cooling Number of
pixels
Pixel pitch
(µm)
Pixel size
[µ
m
(
H
)
×
µ
m
(
V
)]
Spectral response range
(µm)
Defective
pixel
G8050-256R
Non-cooled 0.9 to 1.7 (25 °C)
G8050-256S
One-stage TE-cooled 256 50 50 × 250 0.9 to 1.67 (-10 °C)
G8051-512R
Non-cooled 0.9 to 1.7 (25 °C)
G8051-512S
One-stage TE-cooled 512 25 25 × 250 0.9 to 1.67 (-10 °C)
G8052-256D *
3
G8052-256R
Non-cooled 0.9 to 1.7 (25 °C)
G8052-256S
One-stage TE-cooled
256 50 50 × 500
0.9 to 1.67 (-10 °C)
G8053-512D *
3
G8053-512R
Non-cooled 0.9 to 1.7 (25 °C)
G8053-512S
One-stage TE-cooled
512 25 25 × 500
0.9 to 1.67 (-10 °C)
0
0.5 1.0 1.5 2.0
0
0.5
1.0
WAVELENGTH (µm)
PHOTO SENSITIVITY (A/W)
(Typ.)
T=25
˚C
T= -10
˚C
■ Spectral response
KMIRB0011EA
*1: CDS (Correlated Double Sampling) circuit
A major source of noise in charge amplifiers is the reset noise gen-
erated when the integration capacitance is reset. A CDS circuit greatly
reduces this reset noise by holding the signal immediately after re-
set to find the noise differential.
*2: Timing generator
Different signal timings must be properly set in order to operate a
shift register. In conv entional image sensor oper ation, external PLDs
(Programmable Logic Devices) are used to input the required timing
signals. However, G8050 to G8053 series image sensors inter nally
generate all timing signals on the CMOS chip just by supplying CLK
and RESET pulses. This makes it simple to set the timings.
*3: For G8052-256D and G8053-512D specifications, see the separate
data sheets available from Hamamatsu.
1
InGaAs linear image sensor G8050 to G8053 series
■ Absolute maximum ratings
Parameter Symbol Value Unit
Clock pulse voltage Vφ5.5 V
Operating temperature *1Topr -40 to +70 °C
Storage temperature *1Tstg -40 to +85 °C
*1: Non condensation
■ Electrical characteristics (Ta=25 °C, Vφ=5 V )
Parameter Symbol Min. Typ. Max. Unit
Vdd 4.9 5.0 5.1
Supply voltage Vref - 1.26 - V
Ground Vss - 0 - V
Element bias INP 3.5 4.5 4.6 V
Clock frequency f0.1 - 4 MHz
high Vφ - 0.5 VφVφ + 0.5 V
Clock pulse voltage low Vφ000.4V
tr φ
Clock pulse rise/fall times tf φ020 100 ns
Clock pulse width tpw φ200 - - ns
high Vφ - 0.5 VφVφ + 0.5 V
Reset pulse voltage low V (RES) 0 0 0.4 V
tr (RES)
Reset pulse rise/fall times tf (RES) 0 20 100 ns
Reset pulse width tpw (RES) 6000 - - ns
high VH- 4.4 INP
Video output voltage low VLVref 1.26 - V
Data rate fV-f/8 -Hz
■ Electrical and optical characteristics
General ratings (T=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Peak sensitivity wavelength λp - 1.55 - µm
Saturation charge *2 Qsat -30 -pC
Photo response non-uniformity *3 PRNU - - ±5 %
*2: Vφ=5 V, Cf=10 pF
*3: 50 % of saturation, 10 ms integration time, after dark output subtraction, excluding first and last pixels.
Dark current characteristics (T=25 °C)
Parameter Symbol Min. Typ. Max. Unit
G8050 series - 2 20
G8051 series -1.5 15
G8052 series - 4 40
G8053 series
ID
- 6 60
pA
2
InGaAs linear image sensor G8050 to G8053 series
INTEGRATION
TIME
n ch
(n-1) ch
2 ch
1 ch
8 × N CLOCKS (READOUT TIME)
TRIGGER
(OUTPUT)
VIDEO
(OUTPUT)
CLK
(INPUT)
RESET
(INPUT)
2 CLOCKS
8 CLOCKS 8 CLOCKS
■ Equivalent circuit
CDS
1 PIXEL
INP
SHIFT REGISTER
q( )
OFFSET
COMPENSATION VIDEO
AD-TRIG
Cf=0.5 pF
Cf=10 pF
TIMING GENERATOR
CLK
EXTERNAL INPUT
RESET Vref
Vss
Vdd
PHOTODIODE
KMIRC0010EB
■ Timing chart
KMIRC0011EA
■ Basic circuit connection
BUFFER
BUFFER
Vss
INP
Cf SELECT
Vdd
RESET
CLK
VIDEO
AD-TRIG
Vref
KMIRC0012EA
3
InGaAs linear image sensor G8050 to G8053 series
1.0 ± 0.2
12 14
28 15
10.2 ± 0.15
3.0 ± 0.15
25.4 ± 0.15
22.9 ± 0.15
63.5 ± 0.15
53.3 ± 0.15
38.1 ± 0.15
35.6 ± 0.15
20.3 ± 0.15
A
B
(28 ×) 2.54
(28 ×) 0.46
6.4 ± 1
27.2 ± 0.15
INDEX MARK
NON-COOLED
ONE-STAGE TE-COOLED 4.35 1.8
AB
6.15 3.6
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However , no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
Cat. No. KMIR1009E04
Feb. 2002 DN
Ter mi nal n ame Input/Output Function and recommended connection
CLK Input
(CMOS logic compatible) Clock pulse for operating the CMOS shift register
RESET Input
(CMOS logic compatible)
Reset pulse for initializing the feedback capacitance in the charge amplifier
formed on the CMOS chip. The width of the reset pulse is integration time.
Vdd Input Supply voltage for operating the signal processing circuit on the CMOS chip.
Vss -Ground for the signal processing circuit on the CMOS chip.
INP Input Reset voltage for the charge amplifier array on the CMOS chip.
Cf SELECT Input Voltage that determines the feedback capacitance (Cf) on the CMOS chip.
Cf=10 pF at 0 V, and Cf=0.5 pF at 5 V.
CASE -This terminal is electrically connected to the package.
THERM -Thermistor for monitoring temperature inside the package. No connection for
room temperature operation type.
TE+, TE- -Power supply terminal for the thermoelectric cooler that cools the photodiode array.
No connection for room temperature operation type.
AD-TRIG Output Digital signal for AD conversion; positive polarity
VIDEO Output Analog video signal; positive polarity
Vref Input Reset voltage for the offset compensation circuit on the CMOS chip
■ Dimensional outline (unit: mm)
KMIRA0010EA
KMIRC0013EA
■ Pin connection (top view)
TE +
THERM
THERM
CASE
RESET
TE -
Vdd
Vss
INP
CLK
Vref
VIDEO
Cf SELECT
AD-TRIG
256 PIXELS 512 PIXELS
TE +
THERM
THERM
CASE
RESET-ODD
TE -
Vdd
Vss
INP
CLK-ODD
Vref
VIDEO-ODD
Cf SELECT
AD-TRIG-ODD
RESET-EVEN
AD-TRIG-EVEN
CLK-EVEN
VIDEO-EVEN
4
