DIM400GDM33-F000
Dual Switch IGBT Module
Replaces DS5616-3
DS5616-4 January 2018 (LN35023)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 1/8
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FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free construction
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM400GDM33-F000 is a single switch 3300V, n-
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400GDM33-F000
Note: When ordering, please use the complete part
number
KEY PARAMETERS
VCES 3300V
VCE(sat) * (typ) 2.8V
IC (max) 400A
IC(PK) (max) 800A
* Measured at the auxiliary terminals
Fig. 1 Circuit configuration
Outline type code: G
(See Fig. 11 for further information)
Fig. 2 Package
8(E2)
9(G2)
10(C2)
6(G1)
3(C1)
4(E2)
2(C)
1(E1)
DIM400GDM33-F000
2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
VCES
Collector-emitter voltage
VGE = 0V
3300
V
VGES
Gate-emitter voltage
±20
V
IC
Continuous collector current
Tcase = 90°C
400
A
IC(PK)
Peak collector current
1ms, Tcase = 115°C
800
A
Pmax
Max. transistor power dissipation
Tcase = 25°C, Tj = 150°C
5.2
kW
I2t
Diode I2t value
VR = 0, tp = 10ms, Tj = 125°C
80
kA2s
Visol *
Isolation voltage – per module
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
6000
V
QPD
Partial discharge – per module
IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS
10
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 33mm
Clearance: 20mm
CTI (Comparative Tracking Index): >600
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
Rth(j-c)
Thermal resistance – transistor
Continuous dissipation -
junction to case
-
-
24
°C/kW
Rth(j-c)
Thermal resistance – diode
Continuous dissipation -
junction to case
-
-
48
°C/kW
Rth(c-h)
Thermal resistance –
case to heatsink (per module)
Mounting torque 5Nm
(with mounting grease)
-
-
8
°C/kW
Tj
Junction temperature
Transistor
-
-
125
°C
Diode
-
-
125
°C
Tstg
Storage temperature range
-
-40
-
125
°C
Screw torque
Mounting – M6
-
-
5
Nm
Electrical connections – M4
-
-
2
Nm
Electrical connections – M8
-
-
10
Nm
DIM400GDM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8
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ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICES
Collector cut-off current
VGE = 0V, VCE = VCES
2
mA
VGE = 0V, VCE = VCES, Tcase = 125°C
30
mA
IGES
Gate leakage current
VGE = ±20V, VCE = 0V
1
μA
VGE(TH)
Gate threshold voltage
IC = 40mA, VGE = VCE
5.5
6.5
7.0
V
VCE(sat) †
Collector-emitter
saturation voltage
VGE = 15V, IC = 400A
2.8
V
VGE = 15V, IC = 400A, Tj = 125°C
3.6
V
IF
Diode forward current
DC
400
A
IFM
Diode maximum forward current
tp = 1ms
800
A
VF †
Diode forward voltage
IF = 400A
2.9
V
IF = 400A, Tj = 125°C
3.0
V
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
72
nF
Qg
Gate charge
±15V
10
μC
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 1MHz
1.1
nF
LM
Module inductance
25
nH
RINT
Internal transistor resistance
260
μ
SCData
Short circuit current, ISC
Tj = 125°C, VCC = 2500V
tp ≤ 10μs, VGE ≤ 15V
VCE (max) = VCES – L* x dI/dt
IEC 60747-9
1850
A
Note:
† Measured at the power busbars, not the auxiliary terminals
* L is the circuit inductance + LM
DIM400GDM33-F000
4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 400A
VGE = ±15V
VCE = 1800V
RG(ON) = 5.6
RG(OFF) = 8.2
Cge = 110nF
LS ~ 100nH
2100
ns
tf
Fall time
210
ns
EOFF
Turn-off energy loss
520
mJ
td(on)
Turn-on delay time
1130
ns
tr
Rise time
245
ns
EON
Turn-on energy loss
620
mJ
Qrr
Diode reverse recovery charge
IF = 400A
VCE = 1800V
dIF/dt = 2000A/μs
160
μC
Irr
Diode reverse recovery current
330
A
Erec
Diode reverse recovery energy
150
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 400A
VGE = ±15V
VCE = 1800V
RG(ON) = 5.6
RG(OFF) = 8.2
Cge = 110nF
LS ~ 100nH
2150
ns
tf
Fall time
220
ns
EOFF
Turn-off energy loss
600
mJ
td(on)
Turn-on delay time
1160
ns
tr
Rise time
285
ns
EON
Turn-on energy loss
870
mJ
Qrr
Diode reverse recovery charge
IF = 400A
VCE = 1800V
dIF/dt = 2000A/μs
300
μC
Irr
Diode reverse recovery current
400
A
Erec
Diode reverse recovery energy
300
mJ
DIM400GDM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/8
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Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
DIM400GDM33-F000
6/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
DIM400GDM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/8
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PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services.
All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
0.5
57 ±0.25
57 ±0.25
20 ±0.1
40 ±0.2
124 ±0.25
160 ± 0.5
25.5 ±0.2 29.5 ±0.2
43 ±0.2
47 ±0.2
45 ±0.2
29.5 ±0.2
55.2 ±0.3
11.85 ±0.2
5±0.2
15.5 ±0.2
39 ±0.2
18.1 ±0.2
11.5 ±0.2
29.5 ± 0.5
28.2 ±0.5
11.5 ±0.2
4 x M8
+0.5
- 0.0
6 x M4
screwing depth
max 16
38
screwing depth
max 8
6 x 7
Ø
130 ±
Nominal Weight: 1000g
Module Outline Type Code: G
Fig. 11 Module outline drawing
DIM400GDM33-F000
8/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not
constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and
the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety
and any warning requirements are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or
typographical errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is
the most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to
property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a
product failure or malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use
outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or
explosion. Appropriate application design and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
Preliminary Information: The product design is complete and final characterisation for volume production is in progress.
The datasheet represents the product as it is now understood but details may change.
No Annotation: The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available
on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade
names of their respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF,
United Kingdom
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF,
United Kingdom
Fax:
+44(0)1522 500550
Tel:
+44(0)1522 500500
Tel:
+44(0)1522 502753 / 502901
Web:
http://www.dynexsemi.com
Email:
powersolutions@dynexsemi.com
Dynex Semiconductor Ltd. 2003. Technical Documentation – Not for resale.