Document Number: 81009 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.6, 29-Jun-09 1
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL6100
Vishay Semiconductors
DESCRIPTION
TSAL6100 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control units with high power reqirements
• Free air transmission systems
• Infrared source for optical counters and card readers
• IR source for smoke detectors
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8389
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)
TSAL6100 130 ± 10 940 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSAL6100 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 1.5 A
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered
on PCB RthJA 230 K/W
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81009
2Rev. 1.6, 29-Jun-09
TSAL6100
Vishay Semiconductors High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
0
20
40
60
80
100
120
140
160
180
01020304050607080 90 100
21211 Tamb - Ambient Temperature (°C)
PV - Power Dissipation (mW)
RthJA = 230 K/W
0
20
40
60
80
100
120
0 1020304050607080 90 100
Tamb - Ambient Temperature (°C)
21212
IF - Forward Current (mA)
RthJA = 230 K/W
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.35 1.6 V
IF = 1 A, tp = 100 µs VF2.6 3 V
Temperature coefficient of VFIF = 1 mA TKVF - 1.8 mV/K
Reverse current VR = 5 V IR10 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj25 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie80 130 400 mW/sr
IF = 1 A, tp = 100 µs Ie650 1000 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe35 mW
Temperature coefficient of φeIF = 20 mA TKφe- 0.6 %/K
Angle of half intensity ϕ± 10 deg
Peak wavelength IF = 100 mA λp940 nm
Spectral bandwidth IF = 100 mA Δλ 50 nm
Temperature coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr800 ns
Fall time IF = 100 mA tf800 ns
Virtual source diameter Method: 63 % encircled energy d 3.7 mm
Document Number: 81009 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.6, 29-Jun-09 3
TSAL6100
High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
tp- Pulse Duration (ms)
96 11987
10
0
101
10
1
10
-1
10-1 100102
10-2
I - Forward Current (A)
F
tp/T = 0.01
IFSM = 1 A (Single Pulse)
0.05
0.1
0.5
1.0
V
F
- Forward Voltage (V)
13600
101
100
102
103
104
t
P
= 100 µs
t
P
/T = 0.001
0
I
F
- Forward Current (mA)
4
32
1
14438
10
3
10
110
210
4
10
0
0.1
1
10
1000
100
I
F- Forward Current (mA)
I - Radiant Intensity (mW/sr)
e
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
13602
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1.6
Ie rel;
140
94 7993
IF = 20 mA
Φe rel
T
amb- Ambient Temperature (°C)
890
0
0.25
0.5
0.75
1.0
1.25
- Wavelength (nm)
14291
- Relative Radiant Power
e rel
Φ
IF = 100 mA
λ
990
940
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81009
4Rev. 1.6, 29-Jun-09
TSAL6100
Vishay Semiconductors High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
0.4 0.2 0
I
e rel
- Relative Radiant Intensity
15989
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
35.2 ± 0.55
Ø 5 ± 0.15
Area not plane
technical drawings
according to DIN
specifications
6.544-5259.08-4
Issue: 3; 19.05.09
14436
< 0.7
2.54 nom.
8.7 ± 0.3
AC
1 min.
(4.4)
0.5 + 0.15
- 0.05
Ø 5.8 ± 0.15
7.7 ± 0.15
0.6 + 0.2
- 0.1
R2.49 (sphere)
0.5 + 0.15
- 0.05
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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