MSC80196 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG DESCRIPTION: A The ASI MSC80196 is Designed for Class A Linear Applications up to 2.0 GHz. OD B .060 x 45 CHAMFER C E FEATURES: G * Class A Operation * PG = 7.0 dB at 1.0 W/2.0 GHz * OmnigoldTM Metalization System L 500 mA VCE 20 V PDISS 10 W TSTG -65 C to +200 C JC 17.0 C/W CHARACTERISTICS NP MAXIMUM MINIMUM inches / mm inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 F .117 / 2.97 G H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 COMMON EMITTER TC = 25C NONETEST CONDITIONS SYMBOL I K DIM E -65 C to +200 C TJ J M MAXIMUM RATINGS IC F H MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 50 V BVCEO IC = 5.0 mA 20 V BVEBO IE = 1.0 mA 3.5 V ICEO VCE = 18 V hFE VCE = 5.0 V COB VCB = 28 V PG VCE = 18 V ICQ = 220 mA IC = 1.0 A 15 f = 1.0 MHz POUT = 1.0 W f = 2.0 GHz 7.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 120 --- 5.0 pF dB REV. B 1/1