S1E D MM 4136671 0003540 O54 MESEKG SEMIKRON INC SEMIKRON VpRM tq rams (maximum values for continuous operation) Fast Thyristors with Inter- Var | (Ty = 125C) 4300 A | 4500 A digitated Amplifying Gate trav (Sin. 180; Tease = 85C; 50 Hz; DSC) SKT513F 2S CO Vv ps 510A 590 A SKT 593 F 400 20 SKT 513 F 04 DT OO 800 15 SKT 593 F 08 DS 20 SKT 513 F 08 DT 900 15 SKT 593 F09 DS 20 SKT 513 F 09 DT 1000 15 SKT 593 F 10DS 20 SKT 513 F 10 DT 1100 15 SKT593F11DS 20 SKT 513 F 11DT 1200 20 SKT 513 F 12 DT 1300 25 SKT 513 F 13 DU 1400 30 SKT 513 F 14DV bol | Conditi SKTSISF | skTsesr| Features Symbol | Conditions e@ Capsule cases rm sin. 180; Tcase = 60C; DSC; 50 Hz 2300 A 2700 A neta ceramic to metal Its Ty = 25C 11000A 13000A e@ Gold diffused silicon chip Ty = 125C {0000 A 12000A e Amplifying interdigitated gate it Ty = 25C ecocoo A2s | 845000 A2s| @ Precious metal pressure Ty = 125C 500000 A?s | 720000 As contact tod Ty = 25C; la = 1A; die/dt = 1A/ps typ. 1 ps Typical Applications tor Vp = 0,67 -VpRM typ. 1 ps e@ Self-commutated inverters (di/dt)cr | non-repetitive 1000 A/ us e@ DC choppers f= 50...60Hz 400 A/us e Motor speed control (GV/dter Tyj = 125C 500V/ US Uninterruptible tower supplies Ii i= 2 C typ./max, 200 mA/400 mA e@ Electronic welders IL Ty = 25C; Re = 330; typ./max. 1A/2A e General power switching Vr Ty = 25C; tr = 1800A; max. 22V 1,85V applications Vito) | Ty = 125C 1,4V 1,25V IT Ty = 125C 0,4mQ 0,3 mQ Ipp,!aD | Ty = 125C; Vop = Vorm :Vap = VarRM | 100mA 100 mA Ver Ty = 25C 4V lat Ty = 25C 250 mA Veo Ty = 125C 0,25 V lep Ty = 125C 10mA Rihic cont.; DSC/SSC 0,038/0,078 C/W Rihch DSC/SSC 0,008/0,016 C/W Ty -40... + 125C Tstg -40... +125C F SI units 11...13kKN US units 2200 ...2850 Ibs. w 240g Case B10 by SEMIKRON B4-15SLE D MM 4136671 0003541 TIT MESEKG _ 7~-25-20 ~ SEMIKRON INC SKT 513 F | \ Pt \- 00% \l 200! 60 \ - | : rip ty ok 500 tee 1000 2000 2000 5000 Vp = 800V Vp = B00V ~ Vp a10V C=0,22 pF. R=160 10' tp us 104 Fig. 1a Rated peak on-state current vs. pulse duration 3 Al SKT 513 F J I UI Tcase* 100 200 500 1000 bot 2000 1 Vp = 800V C= 0,22 pF Vp = 800V 'tm L 10000 R169 =~Vp #10V 3 4 10 tp us 10 Fig. 1 Rated peak on-state current vs. pulse duration 2000 Al SKT 513 F ditidt=60 Alps 1500 Tease* 60 80 1000 100 C 500 Vp = 800 | Vp = 800V C* 0.22 pF T Vp = 10V R= 160 0 to f 70? 10 Hz 104 Fig. 3a Rated peak on-state current vs. pulse duration 3 Al_SKT S813 F to: LUI y Fal Tease= 80C fy 59 ; mien 104 200 nt 500 I 1000 2000 2000 5000 Vp = 800V Vp = 800V tooco NR 4 10V i Hz C= 0,22 pF R= 160 46 t 4 P us 10 Fig. 1b Rated peak on-state current vs. pulse duration 3 ta Al_ SKT 513 F AA Vp" 800V 5 0 4| * Vp * 800V == Vp 8 10V a 10 Wp" 1 0,5 Fig. 2 Energy dissipation per pulse 3 ET gd SKT 513 F i opie | dizidt 50 Alps so J Por err 20 10F Vp= 800v Vp=a00v _ ~Vpe10V 5 2 t a a eee et ee 3 Wp* 1 Os 10 tp us 10 Fig. 4a Energy dissipation per pulse B4-16 by SEMIKRONSEMIKRON INC SIE D MM 8136671 0003542 2b MESEKG SEMIKRON 2000 SKT 513 F di =100A/ ps 1500 Tease* 1000 400 500 Vp = 800V Vp = 800V Vp #10V C=0,22 pF ITM R =169 So" 40? 103 Hz 104 Fig.3b Rated peak on-state current vs. pulse duration 2000 Al SKT 513 F fy dizidt=200A/ ps 1500 Tease = 1000 C I] = 800V Vp = 800V | TM [== vps 10V o 1o' f 40? 103 Hz 104 Fig.3c Rated peak on-state current vs. pulse duration 3 Al SKT 593F I UL f= 200 50 Tcase= 60C *2115 10 1000 ' 1 2000 5000 Vp = 600V Vp = 600V ~~Vp #10V C=0,22 pF R=169 4 us 10 Fig. 1a Rated peak on-state current vs. pulse duration 7-25-20 me T dy Fm] at SKT 513 F Por rece ! oe ee OTN Peel Vp = 800V a Vp= s00y 5 -Vp = 10V R 2 10 Wat 1 SN 3 10 t, Pp Fig. 4b Energy dissipation per pulse 3 A iy hab-4 SKT 513 F diqidt-200AIps 'aq'49 )' Yp= s00v 10 Vp = 800V = Vp # 10V Rr? | 10 Wor 1 0,5 lt 3 10 Fig. 4c Energy dissipation per pulse 3 SKT 593 F Teasez 80C || | fe 200 50 500 1000 10 2000 2000 5000 10000 Ita | Hz 104 us 10 tp Fig. 1b Rated peak on-state current vs. pulse duration by SEMIKRON B4-17SHE D Ml 6136671 oo03543 BL2 MESEKG SEMIKRON | INC T-25-20 3 3 | SKT 593F 4l sKxT sos F {111 05 Goby Vp = 600 vil s 4o| 20 nn an 4 a| "Vp 600V 10 200 10 moVR #10V 2 ta 500 Wot 20 1000 2600 Vp 6004 Vp = 600V =~ Vp a 10V tim C= 0,22 pF R= 160 tm ws 104 0 tp 104 Fig. 1 Rated peak on-state current vs. pulse duration Fig. 2 Energy dissipation per pulse 2000 Al SKT S93F J disidt=50 Alps toil 3 Al SKT S93F LoL LUE Tease* 60 = diqidt=50 Alps 1rrtimy 1500 Vp * 600V Vp = 600V == Vp 4 10V Litt 2 4 7000 rt 100 500 Vp = 600 Vp = 600 VY ~~Vpa10V ! TM [C= 0.22 pF | R= 160 0 id 9 o' f 10? 108 Hz 104 to' tp io4 Fig.3a Rated peak on-state current vs. pulse duration Fig. 4a Energy dissipation per pulse 2000 Al SKT 3938 F _[aisidt-s00Arps I tl = 60 3 7 Al SKT 593 F jvm diqldts1o0aips! 1 20 30 J t l Lbneun Vp * 600V VR 600V ~Vpa10V 2 Wp * 1 a 05 1500 5 1000 100 % 500 | Vp = 600 Vp = 600V ir ott im c= 0,22 f , tm R= 169 fo" 10? 109 Hz 104 *0 tp us 104 Fig.3b Rated peak on-state current vs. pulse duration Fig. 4b Energy dissipation per pulse B4-18 by SEMIKRONSLE D MM 4136671 OOO3544 7T9T MISEKG ~ SEMIKRON INC SEMIKRON T-25-20 - 2000 Al SKT S93 F _aizidt=-200A/ps 1 obs Tcase= 60 4500 1000 100 C Vp = 600V Vag = 600V -~ Vp #10V C=0,22 pF R = 169 0 10 f 10? 108 Hz 104 500 la Fig.3c Rated peak on-state current vs. pulse duration 1000 pe 513F F rot = 125C 800 400 200 QQ 0 O-dizidt 50 100 150 Fig. 5 Recovered charge vs. current decrease Alps 200 0,05 3g SKT 513 F SKT 593 F 0,04 003 0,02 5 | Znz|C/ bsc sc 0,002 | 0,004 0,006 | 0,013 0,007 | 0,015 0,014 | 0,029 0,046 DSC sin, 180 rec. 180 rec, 120 rec, 60 0,01 Z(thyt s 102 3 t 109 101 Fig. 7 Transient thermal impedance vs. time 3 A ay art ST ar "Ooh ' diqzidt=200A/ps * T B [| 40 | 20 30 J ep | Poe et iad Vp = 600V Vp = 600V, ~~ Vp = 10V Tm 8 4 10 tp us 10 Fig. 4c Energy dissipation per pulse 400 A 513F 300 200 100 Rm oO O~di-idt 50 400 160 Alps 200 Fig. 6 Peak recovery current vs. current decrease 075 513F WwW Rthic =0,078C/W 0,10 rec. Rihje]__=@.038C/W 0,05 Rthic Qo 08 30 60 90 120 Fig. 8 Thermal resistance vs. conduction angle 150 %l 180 by SEMIKRON B4-19SLE D MM 82366712 0003545 b35 MESEKG SEMIKRON INC 2500 2500 A SKT 513 F Al SKT 593 F 2000 2000 1500 1500 14000 1000 500 500 iy ty 0 0 O vy 1 2 Y 3 Oo vy i 2 Fig. 9a On-state characteristics Fig. 9b On-state characteristics 'tloVv) i TSM, (A) 25C ITy=125 C 16 SKT 513F] 11.000] 10000 SKT 593F} 13.000] 12000 14 1,2 OB 06 04 70 + 401 102 ms 109 Fig. 10 Surge overload current vs. time 3 2} SKT 3513F 10! Ig2 345 2 345 23465 A10* Fig. 11 Gate trigger characteristics T-25-20 B4-20 by SEMIKRONSLE D MM 8136671 GOO3S4B SEMNIKRON INC 571 MESEKG SEMIKRO T-25-20 SKT 240 F SKT 290 F Case B8 x JEDEC: TO-200 AB a 151 A4 DIN 41 814 0,4, Oo ~ 61,47 ' |[91,0 SKT 351 F SKT 431 F Case B 11 x JEDEC: TO-200 AB + 0,7 152 A4 DIN 41 814 0,4 Cathode terminal Anode terminal Gate terminal (yellow sleeve) K: Auxiliary cathode terminal (red sleeve) EORO Dimensions in mm by SEMIKRON B4-21SLE D MM 8136671 OOO354? 408 MESEKG SEMIKRON INC T-25-2000 SKT 513 F, SKT 593 F Case B 10 DIN 41 814: 15804 JEDEC: TO-200 AC N Cathode terminal Anode terminal Gate terminal (yellow sleeve) K: Auxiliary cathode terminal (red sleeve) EDPO Dimensions in mm B4-22 by SEMIKRON