DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SJ128 FAST SWITCHING P-CHANNEL SILICON POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (Unit: mm) e 6.5+0.2 5.0+0.2 1.5737 [55402 13.7 MIN. 0.5+0.1 2.3+0.2 FEATURES @ Suitable for switching power supplies, actuater controls, and pulse circuits. @ Low Rops(en) @ No second breakdown @ 4V Gate Drive Logic level ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Drain to Source Voltage Voss 100 V : Gate to Source Voltage Voss +20 Vv 0.6+0.1 wf 0.6 0-1 Continuous Drain Current Ip(pe) +2 A Peak Drain Current IDiputse)* +8 A 1, Gate Total Power Dissipation P+ 20 W 3 source Channel Temperature Teh 150 c 4 Drain Storage Temperature Tstg 55 to +150 c * PW S 300 us, Duty Cycle < 10 % ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain Leakage Current Ipss 10 uA Vps = 100 V, Vag =0 Gate to Source Leakage Current I6ss +100 nA VG6s= 20V, Vps =0 Gate to Source Cutoff Voltage Vasloff) 1.0 3.0 v Vps = ~-10 V, Ip =1 mA Forward Transfer Admittance lyfs! 1.0 Ss Vps =-10V,Ip=-1A Drain to Source On-State Resistance Rpston) 0.8 1.0 2 V@s=-10V,Ip=-1tA Drain to Source On-State Resistance Rpsi{on} 11 1.5 2 V6s=-4V,iIp=-08A Input Capacitance Ciss 1000 pF Output Capacitance Coss 200 pF vs Mae V, Ves =9 Reverse Transfer Capacitance Crss: 25 pF Turn-On Delay Time td{on) 30 ns Ip =-1 A, Ve = 50 V Rise Time ty 30 ns VGSion) =10 V Turn-Off Delay Time tdloff) 110 ns Re On Fall Time te 40 ns Document No. D13619EJ1VODS00 (1st edition) (Previous No. TO-1621) Pented Japan menor NEC Corporation 1986NEC 28J128 TURN-ON AND TURN-OFF TIME TEST CIRCUIT t=lus Duty Cycles 1 % TYPICAL CHARACTERISTICS (Ta = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA | 100 N\ ~ Ms) S L a0 ~ L~ 3 , NX o wa B60 s s a = 40 3 a 20 X 0 20 40 60 80 100 120 140 160 TeCase TemperatureC TOTAL POWER DISSIPATION vs, CASE TEMPERATURE 25 ~ Tt i = 20 L N\ Ss s S 5 NM Bg 3 N a 3 gc 10h---- N ws N\ 3 r \ kb 5 o NX 0 20 40 60 80 100 120 140 160 TcCase Temperature C RL Gate Voltage Wave Form Ves a VGS(on) 90 % Drain Current Wave Form td(on) tr td(off) tf 0 10 % 10 % t. + 90 % 90 % Ip Drain CurrentA Ip Drain CurrentA 10 1.0 0.1 0.01 1.0 FORWARD BIAS SAFE OPERATING AREA | ) MAX. ws wey 40 cok UN GOs AT ge ad Te=25 C Singie Pulse -10 100 Vps Drain to Source VoltageV DRAIN CURRENT vs, DRAIN TO SOURCE VOLTAGE Pulsed Vgs=3 V 4.0 8.0 -12 ~16 20 Vps Drain to Source VoltageVNEC FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 Vos=10V Pulsed - oO = | Yis | Forward Transfer Admittance S 0.01 0.1 -1.0 -16 Ip Drain Current -A CAPACITANCE vs, DRAIN TO SOURCE VOLTAGE 16000 Vas 70 f1 MHz u 1000 a Q c x oO os 2 100 { Oo 10 10 -10 100 Vps- Drain to Source VaitageV DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPE RATURE 2.0 G 3 4 < rat s w am 15 A 2 2 Vqasg=-4 L -10V 10 _ oO 8 La = 05 c g a I Ip=-1A & 0 Pulsed 8 50 0 50 100 150 Teh Channel Temperature C ISp Reverse Drain Current --A ~0.01 RDS(on) Drain to Source On-State ResistanceQ RDS(on)~ Drain to Source On- State Resistance 2 28J128 SOURCE TO DRAIN DIODE FORWARD VOLTAGE -1.0 0.1 0 0.4 -0.8 1.2 16 YspSource to Drain VoltageV DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2.0 1.6 1.2 0.8 0.4 0 4.0 -8.0 -12 16 20 VasGate to Source Voltage- V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 0.01 ~O1 -1.0 ~10 Ip Drain CurrentANEC 2SJ128 td(on) Turn-On Delay Timens, tyRise Timens Ip Drain CurrentA 0.001 td(otf) Turn-off Delay Timens, tfFall Timens -10 -10 0.1 -0.01 1000 100 10 0.01 TRANSFER CHARACTERISTICS Vps= ~2.0 4.0 ~ 6.0 8.0 VGS~ Gate to Source VoltageV SWITCHING TIME vs. DRAIN CURRENT 01 1.0 Ip Drain CurrentA 10 -10 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE i w Q | nN o | oad o Vps=10V ips 1 mA VGS(off)--Gate to Source Cutoff Voltage -V 50 0 50 100 150 TchChannel Temperature CNEC 2SJ128 (MEMO)NEC 28J128 (MEMO)NEC 2S8J128 (MEMO)NEC 28J128 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. - NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. lf customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5