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M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
Doubler
13.5-17.0/27.0-34.0 GHz
XX1007-QT
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Rev. V1
Features
Integrated Gain, Doubler and Driver Stages
Single Positive Supply, +5V
Integrated Bypassing Capacitor
+20.0 dBm Output Saturated Power
35.0 dBc Fundamental Suppression
On-Chip ESD Protection
100% RF, DC and Output Power Testing
3x3mm QFN Package
RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s 13.5-17.0 / 27.0-34.0 GHz GaAs
MMIC doubler integrates a gain stage, passive
doubler and driver amplifier onto a single device.
The XX1007-QT has a self-biased architecture
requiring a single positive supply (+5V) only and
integrated on-chip bypassing and DC blocking
capacitors eliminating the need for any external
components. This device uses M/A-COM Tech’s
GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure
high repeatability and uniformity. The XX1007-QT
has integrated ESD structures for protection and
comes in a low cost 3x3mm QFN package. The
device is well suited for Millimeter wave Point-to-
Point Radio, LMDS, SATCOM and VSAT
applications.
Ordering Information
Part Number Package
XX1007-QT-0G00 bulk quantity
XX1007-QT-0G0T tape and reel
XX1007-QT-EV1 evaluation board
Functional Block Diagram
Pin Configuration
Pin No. Function Pin No. Function
3 RF In 1,2,4,5,6,7,8,9 NC
10 RF Out 11,12,14,15,16 NC
13 Vd
Absolute Maximum Ratings
Parameter Absolute Max.
Supply Voltage (Vd) +6.0 VDC
Supply Current (Id) 300 mA
Gate Bias Voltage (Vg) +0.3 VDC
Input Power (RF Pin) 10 dBm
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to MTTF Table1
Channel Temperature (Tch) MTTF Table1
(1) Channel temperature directly affects a device's MTTF. It is recom-
mended to keep channel temperature as low as possible to maximize
lifetime.