TMA106G-L
Features and Benefits
Exceptional reliability
Small SIP package with heatsink mounting for high
thermal dissipation and long life
VDRM of 600 V
10 ARMS on-state current
Uniform switching
Triac (Bidirectional Triode Thyristor)
Typical Applications
Applications
Residential and commercial appliances: vacuum cleaners,
rice cookers, TVs, home entertainment
White goods: washing machines
Office automation power control, photocopiers
Motor control for small tools
Temperature control, light dimmers, electric blankets
General use switching mode power supplies (SMPS)
Description
This Sanken triac (bidirectional triode thyristor) is designed
for AC power control, providing reliable, uniform switching
for full-cycle AC applications.
In comparison with other products on the market, the
TMA106G-L provides greater peak nonrepetitive off-
state voltage, VDSM (700 V). In addition, commutation
dv/dt and (dv/dt)c are improved.
Halogen
Lamp
Gate
Controller
Heater control
(for example, LBP. PPC, MFP)
Two-phase motor control
(for example, washing machine)
In-rush current control
(for example, SMPS)
Package: 3-pin SIP (TO-220)
Not to scale
28105.21
Triac (Bidirectional Triode Thyristor)
TMA106G-L
2
Absolute Maximum Ratings
Characteristic Symbol Notes Rating Units
Peak Repetitive Off-State Voltage VDRM RGREF = 600 V
Peak Non-Repetitive Off-State Voltage VDSM RGREF = 700 V
RMS On-State Current IT(RMS)
50/60 Hz full cycle sine wave,
total Conduction angle (α+) + (α–) = 360°,
TC = 105°C
10 A
Surge On-State Current ITSM
f = 60 Hz Full cycle sine wave, peak value, non-repetitive,
initial TJ = 25°C
105 A
f = 50 Hz 100 A
I2t Value for Fusing I2t Value for 50 Hz half cycle sine wave, 1 cycle, ITSM = 100 A 50 A2
• s
Critical Rising Rate of On-State Current di/dt IT = IT(RMS) × √2, VD = VDRM × 0.5, f 60 Hz, tgw 10 μs,
tgr 250 ns, Igp 60 mA (refer to Gate Trigger Current diagram) 25 A/μs
Peak Gate Current IGM f 50 Hz, duty cycle 10% 2 A
Peak Gate Power Dissipation PGM f 50 Hz, duty cycle 10% 5 W
Average Gate Power Dissipation PGM(AV) 0.5 W
Junction Temperature TJ–40 to 125 ºC
Storage Temperature Tstg –40 to 125 ºC
T1
T2
G
Terminal List Table
Number Name Function
1 T1 Main terminal, gate referenced
2 T2 Main terminal connect to signal side
3 G Gate control
Pin-out Diagram
Thermal Characteristics May require derating at maximum conditions
Characteristic Symbol Test Conditions Value Units
Package Thermal Resistance
(Junction to Case) RθJC For AC 1.8 ºC/W
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature, TA, of 25°C, unless oth er wise stated.
123
Selection Guide
Part Number Package Packing
TMA106G-L 3-pin fully molded SIP with heatsink mount 50 pieces per tube
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Triac (Bidirectional Triode Thyristor)
TMA106G-L
3
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
Off-State Leakage Current IDRM
VD = VDRM, TJ = 125°C, RGREF = using test circuit 1 2.0 mA
VD = VDRM, TJ = 25°C, RGREF = using test circuit 1 100 μA
On-State Voltage VTM IT = 14 A, TJ = 25°C 1.5 V
Gate Trigger Voltage VGT
Quadrant I: T2+, G+
VD = 12 V, RL = 20 Ω, TJ = 25°C
1.5 V
Quadrant II: T2+, G– 1.5 V
Quadrant III: T2–, G– 1.5 V
Gate Trigger Current IGT
Quadrant I: T2+, G+
VD = 12 V, RL = 20 Ω, TJ = 25°C
30 mA
Quadrant II: T2+, G– 30 mA
Quadrant III: T2–, G– 30 mA
Gate Non-trigger Voltage VGD VD = VDRM × 0.5, RL = 4 kΩ, TJ = 125°C 0.2 V
Critical Rising Rate of
Off-State Voltage during
Commutation*
(dv/dt)c VD = 400 V, (di/dt)c = –5 A/ms, ITP = 2 A, TJ = 125°C 10 V/μs
Critical Rising Rate of
Off-StateVoltage dv/dt VD = VDRM × 0.66, RGREF = using test circuit 1, TJ = 125°C 200 V/μs
*Where ITP is the peak current through T2 to T1.
Test Circuit 1
Gate Trigger Current
Gate Trigger Characteristics
T1
T2
RGREF =
G
tgr
tgw
igp
T1 [ – ]
T2 [ + ]
G [ – ]
T1 [ – ]
T2 [ + ]
G [ + ]
T1 [ + ]
T2 [ – ]
G [ – ]
T1 [ + ]
T2 [ – ]
G [ + ]
Quadrant II Quadrant I
+IGT
+T2
–T2
Polarities referenced to T1
–IGT
Quadrant III Quadrant IV
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Triac (Bidirectional Triode Thyristor)
TMA106G-L
4
Q4
Q
AA = Conduction angle
Supply VAC
Q
On-State
Currrent
Q
VGATE
VGT
ITSM
Commutation Timing Diagrams
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Triac (Bidirectional Triode Thyristor)
TMA106G-L
5
Performance Characteristics at TA = 25°C
0.1
1
10
100
0.6 1.0 1.4 1.8 2.2 2.6 3.2 3.4 3.8 4.2
V
T
(max) (V)
I
T
(max) (A)
150
125
100
75
50
25
0
16
14
12
10
8
6
4
2
0
120
100
80
60
40
20
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1 10 100
I
TSM
(A)
0 2 4 6 8 10 12 14 16 0 2 6 841012
0.1
1
100
10
10 100 1000 10 000 –60 –40 –20 20 40 60 80 100 120 1400
0.1
1
10
Maximum On-State
Current versus
Maximum On-State
Voltage
Gate Voltage
versus
Gate Current
Surge On-State
Current versus
Quantity of
Cycles
Case Temperature
versus On-State
RMS Current
On-State Average
Power Dissipation
versus Maximum
On-State
RMS Current
Proportional Change
of Typical
Trigger Voltage
versus
Junction Temperature
TJ = 125°C
f = 50 Hz
full cycle sine wave
total Conduction angle
(A+) + (A–) = 360°
initial TJ = 125°C
full cycle sine wave
total Conduction angle
(A+) + (A–) = 360°
full cycle sine wave
total Conduction angle
(A+) + (A–) = 360°
TJ = 25°C
P
T(AV)
(W)
I
T(RMS)
(A)
V
G
(V)
I
G
(mA)
Quantity of Cycles
T
C
(°C)
V
GT (TJ)
(V) / V
GT (TJ = 25°C )
(V)
Proportional Change
of Typical
Trigger Current
versus
Junction Temperature
I
GT (TJ)
(A) / I
GT (TJ = 25°C )
(A)
0.1
1
10
Proportional Change
of Typical
Holding Current
versus
Junction Temperature
I
H (TJ)
(A) / I
H (TJ = 25°C )
(A)
TJ (°C)
–60 –40 –20 20 40 60 80 100 120 1400
TJ (°C)
–60 –40 –20 20 40 60 80 100 120 1400
TJ (°C)
Quadrant I (T2+, G+)
Quadrant II (T2+, G–)
Quadrant III (T2–, G–)
RGREF = 1 kΩ
105°C
VGM = 10 V
VGT (–40°C)
= 2 V VGT (25°C)
= 1.5 V
VGD = 0.2 V
IGM = 2 A
IGT (–40°C)
= 90 mA
IGT (25°C) = 30 mA
P
GM
=
5 W
P
G(AV)
=
0.5 W
I
T(RMS)
(max) (A)
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Triac (Bidirectional Triode Thyristor)
TMA106G-L
6
1
0.1
10
0.001 0.01 0.1 1 10 100
Z
Q
JC
(°C/W)
Transient Thermal Impedence versus Triac Voltage Pulse Duration
For AC
Q
T
(s)
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Triac (Bidirectional Triode Thyristor)
TMA106G-L
7
Leadframe plating Pb-free. Device
meets RoHS requirements.
9.9 ±0.3
(8.7)
Ø3.6 ±0.2
5.5 ±0.2
1.3 ±0.2
2.4 ±0.2
Terminal dimension at case surface
0.5 +0.15
–0.1
15.9 ±0.3
13.1 ±0.5 9.2 ±0.3
2.8 ±0.2
(3)
Branding
Area XXXXXXXX
XXXXX XXXXX
Branding codes (exact appearance at manufacturer discretion):
1st line left, lot: YM
Where: Y is the last digit of the year of manufacture
M is the month (1 to 9, O, N, D)
1st line right, lot: DDR
Where: DD is the date
R is a tracking letter
2nd line, type: MA106G
123
2.54 ±0.2
10 ±0.2
18.95 MAX
(1.7)
(1.3)
1.4 ±0.15
1.27 ±0.15
0.8 ±0.15
Terminal core material: Cu
Terminal treatment: Sn plating
Package: TO-220
Dimensions in millimeters
View B
View A
0.6 MAX
View C
0.6 MAX
View B
View A
View C
Exposed
heatsink pad
TO-220 Package Outline Drawing
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Triac (Bidirectional Triode Thyristor)
TMA106G-L
8
590
130
330
570
55
155
533 7
33
Packing Specification
Tube Packing
50 pieces per tube
20 tubes per layer
1 layer per inner carton
1000 pieces per inner carton
4 inner cartons per outer carton
4000 pieces per outer carton
Dimensions in millimeters
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Triac (Bidirectional Triode Thyristor)
TMA106G-L
9
WARNING — These devices are designed to be operated at lethal voltages and energy levels. Circuit designs
that embody these components must conform with applicable safety requirements. Pre cau tions must be
taken to prevent accidental contact with power-line potentials. Do not connect ground ed test equipment.
The use of an isolation transformer is recommended during circuit development and breadboarding.
Because reliability can be affected adversely by improper storage
environments and handling methods, please observe the following
cautions.
Cautions for Storage
Ensure that storage conditions comply with the standard
temperature (5°C to 35°C) and the standard relative humidity
(approximately 40% to 75%); avoid storage locations that
experience extreme changes in temperature or humidity.
Avoid locations where dust or harmful gases are present and
avoid direct sunlight.
Reinspect for rust on leads and solderability of products that have
been stored for a long time.
Cautions for Testing and Handling
When tests are carried out during inspection testing and other
standard test periods, protect the products from power surges
from the testing device, shorts between adjacent products, and
shorts to the heatsink.
Remarks About Using Silicone Grease with a Heatsink
When silicone grease is used in mounting this product on a
heatsink, it shall be applied evenly and thinly. If more silicone
grease than required is applied, it may produce stress.
Coat the back surface of the product and both surfaces of the
insulating plate to improve heat transfer between the product and
the heatsink.
Volatile-type silicone greases may permeate the product and
produce cracks after long periods of time, resulting in reduced
heat radiation effect, and possibly shortening the lifetime of the
product.
Our recommended silicone greases for heat radiation purposes,
which will not cause any adverse effect on the product life, are
indicated below:
Type Suppliers
G746 Shin-Etsu Chemical Co., Ltd.
YG6260 Momentive Performance Materials
SC102 Dow Corning Toray Silicone Co., Ltd.
Heatsink Mounting Method
Torque When Tightening Mounting Screws. Thermal resistance
increases when tightening torque is low, and radiation effects are
decreased. When the torque is too high, the screw can strip, the
heatsink can be deformed, and distortion can arise in the product frame.
To avoid these problems, observe the recommended tightening torques
for this product package type 0.490 to 0.686 N•m (5 to 7 kgf•cm).
For effective heat transfer, the contact area between the product and
the heatsink should be free from burrs and metal fragments, and the
heatsink should be flat and large enough to contact over the entire side
of the product, including mounting flange and exposed thermal pad.
The mounting hole in customer-supplied heatsink must be less than
Ø4 mm; this includes the diameter of any dimple around punched holes.
This is to prevent possible deflection and cracking of the product case
when fastened to the heatsink.
Soldering
When soldering the products, please be sure to minimize the
working time, within the following limits:
260°C 10 s
350°C 3 s
Soldering iron should be at a distance of at least 1.5 mm from the
body of the products
M3 Screw
Device
Insulating Plate
Heatsink
Flat Washer
Split Washer
M3 Nut
Typical Mounting
Configuration
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Triac (Bidirectional Triode Thyristor)
TMA106G-L
10
The products described herein are manufactured in Ja pan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc.
Sanken and Allegro reserve the right to make, from time to time, such de par tures from the detail spec i fi ca tions as may be re quired to per mit im-
prove ments in the per for mance, reliability, or manufacturability of its prod ucts. Therefore, the user is cau tioned to verify that the in for ma tion in this
publication is current before placing any order.
When using the products described herein, the ap pli ca bil i ty and suit abil i ty of such products for the intended purpose shall be reviewed at the users
responsibility.
Although Sanken undertakes to enhance the quality and reliability of its prod ucts, the occurrence of failure and defect of semi con duc tor products at
a certain rate is in ev i ta ble.
Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems
against any possible injury, death, fires or damages to society due to device failure or malfunction.
Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equip ment or apparatus
(home ap pli anc es, office equipment, tele com mu ni ca tion equipment, measuring equipment, etc.). Their use in any application requiring radiation
hardness assurance (e.g., aero space equipment) is not supported.
When considering the use of Sanken products in ap pli ca tions where higher reliability is re quired (transportation equipment and its control systems
or equip ment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written con-
firmation of your spec i fi ca tions.
The use of Sanken products without the written consent of Sanken in applications where ex treme ly high reliability is required (aerospace equip-
ment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited.
The information in clud ed herein is believed to be accurate and reliable. Ap pli ca tion and operation examples described in this pub li ca tion are given
for reference only and Sanken and Allegro assume no re spon si bil i ty for any in fringe ment of in dus tri al property rights, intellectual property rights, or
any other rights of Sanken or Allegro or any third party that may result from its use.
Anti radioactive ray design is not considered for the products listed herein.
The contents in this document must not be transcribed or copied without Sanken’s written consent.
Copyright © 2009 Allegro MicroSystems, Inc.
This datasheet is based on Sanken datasheet SSE-24369
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Triac (Bidirectional Triode Thyristor)
TMA106G-L
11
Asia-Pacific
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026, Ocean Centre
Canton Road, Tsimshatsui
Kowloon, Hong Kong
Tel: 852-2735-5262, Fax: 852-2735-5494
Sanken Electric (Shanghai) Co., Ltd.
Room 3202, Maxdo Centre
Xingyi Road 8, Changning District
Shanghai, China
Tel: 86-21-5208-1177, Fax: 86-21-5208-1757
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor
88 Jung Shiau East Road, Sec. 2
Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161, Fax: 886-2-2356-8261
Japan
Sanken Electric Co., Ltd.
Overseas Sales Headquarters
Metropolitan Plaza Building
1-11-1 Nishi-Ikebukuro, Toshima-ku
Tokyo 171-0021, Japan
Tel: 81-3-3986-6164, Fax: 81-3-3986-8637
Korea
Sanken Electric Korea Co., Ltd.
Samsung Life Yeouido Building 16F
23-10, Yeouido-Dong, Yeongdeungpo-gu
Seoul 150-734, Korea
Tel: 82-2-714-3700, Fax: 82-2-3272-2145
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West
Singapore 189720
Tel: 65-6291-4755, Fax: 65-6297-1744
Europe
Sanken Power Systems (UK) Limited
Pencoed Technology Park
Pencoed, Bridgend CF35 5HY, United Kingdom
Tel: 44-1656-869-100, Fax: 44-1656-869-162
North America
United States
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01606, U.S.A.
Tel: 1-508-853-5000, Fax: 1-508-853-7895
Allegro MicroSystems, Inc.
14 Hughes Street, Suite B105
Irvine, California 92618, U.S.A.
Tel: 1-949-460-2003, Fax: 1-949-460-7837
Worldwide Contacts
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com