Ordering number : EN8699A VEC2315 P-Channel Power MOSFET http://onsemi.com -60V, -2.5A, 137m, Dual VEC8 Features * * * * * ON-resistance RDS(on)1=105m(typ.) 4V drive High-density mounting Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit --60 V 20 V --2.5 A PW10s, duty cycle1% --10 A When mounted on ceramic substrate (900mm2x0.8mm) 1unit 0.9 W Total Dissipation PD PT 1.0 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C When mounted on ceramic substrate (900mm2x0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7012-002 * Package : VEC8 * JEITA, JEDEC :* Minimum Packing Quantity : 3,000 pcs./reel 0.3 8 7 0.15 VEC2315-TL-H 6 5 Packing Type : TL Marking UM 2.3 2.8 0.25 Package Dimensions 0.25 LOT No. 1 2 3 TL 4 0.65 0.07 0.75 2.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Electrical Connection 8 7 6 5 1 2 3 4 VEC8 Semiconductor Components Industries, LLC, 2013 July, 2013 80812 TKIM/30712PA TKIM TC-00002731 No.8699-1/7 VEC2315 Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings Conditions min ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=16V, VDS=0V --60 VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A --1.2 typ Unit max V --1 A 10 A --2.6 V 3.9 ID=--1.5A, VGS=--10V ID=--0.75A, VGS=--4.5V ID=--0.75A, VGS=--4V S 105 137 m 128 180 m 138 194 m 420 pF 54 pF Crss 44 pF Turn-ON Delay Time td(on) 6.4 ns Rise Time tr 9.8 ns Turn-OFF Delay Time 65 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--2.5A 36 ns 11 nC 1.4 nC 2 IS=--2.5A, VGS=0V nC --0.83 --1.2 V Switching Time Test Circuit 0V --10V VDD= --30V VIN ID= --1.5A RL=20 VIN D PW=10s D.C.1% VOUT G VEC2315 P.G 50 S Ordering Information Device VEC2315-TL-H Shipping memo VEC8 3,000pcs./reel Pb Free and Halogen Free ID -- VDS V --3 . 0V V VDS= --10V --4 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT15911 0 0 --0.5 --1.0 --1.5 25 C C --1 Ta= 7 --0.5 --2 5C 5V --1.0 --3 --25 V --2.5 V GS= Drain Current, ID -- A --1.5 ID -- VGS --5 --4 . --2.0 --3. 5 --4. 0 --16.0V --10 .0V --6.0 V --2.5 Drain Current, ID -- A Package --2.0 --2.5 Gate-to-Source Voltage, VGS -- V --3.0 --3.5 IT15912 No.8699-2/7 VEC2315 RDS(on) -- VGS 300 RDS(on) -- Ta 300 150 100 50 0 0 --2 --6 --4 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 3 5 = Ta 5C --2 C 25 5 C 1.0 7 7 --20 0 5 20 40 60 80 100 120 140 3 160 IT15914 IS -- VSD 7 5 2 2 --40 Ambient Temperature, Ta -- C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 50 7 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 --0.01 --0.2 7 5 Ciss, Coss, Crss -- pF 7 3 2 tr td(on) 5 Ciss 3 2 100 7 5 5 Coss 3 3 Crss 2 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 2 7 --7 3 2 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 11 IT15919 ) 3 C 25 2 Operation in this area is limited by RDS(on). a= (T 0 s s n 3 2 0m io --1 m 10 at 3 2 --2 10 0 s er Drain Current, ID -- A --1.0 7 5 --0.1 7 5 --3 ID= --2.5A op --4 10 C --5 IDP= --10A (PW10s) D --6 IT15918 ASO s 1m --8 1 --10 --15 --20 --25 --30 --35 --40 --45 --50 --55 --60 2 --10 7 5 0 --5 Drain-to-Source Voltage, VDS -- V VDS= --30V ID= --2.5A --9 0 IT15917 VGS -- Qg --10 --1.2 IT15916 f=1MHz tf 7 --1.0 1000 5 10 --0.8 Ciss, Coss, Crss -- VDS 2 td(off) 7 --0.6 Diode Forward Voltage, VSD -- V VDD= --30V VGS= --10V 100 --0.4 IT15915 SW Time -- ID 2 Switching Time, SW Time -- ns 100 10 0.1 --0.01 Gate-to-Source Voltage, VGS -- V 150 0 --60 --16 VDS= --10V 3 5A 0.7 = -I A V, D 0.75 4.0 = -= -I S D .5A VG 5V, = --1 --4. I = D , VGS --10.0V = VGS IT15913 | yfs | -- ID 2 200 --25 C --0.75A 200 250 25C ID= --1.5A Ta= 75C 250 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C Ta=25C Single pulse When mounted on ceramic substrate (900mm2x0.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT15920 No.8699-3/7 VEC2315 PD -- Ta Allowable Power Dissipation, PD -- W 1.2 When mounted on ceramic substrate (900mm2x0.8mm) 1.0 0.9 0.8 To t al 0.6 di ss 1u nit ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT15921 No.8699-4/7 VEC2315 Taping Specification VEC2315-TL-H No.8699-5/7 VEC2315 Outline Drawing VEC2315-TL-H Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No.8699-6/7 VEC2315 Note on usage : Since the VEC2315 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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