Philips Semiconductors Product specification meee ee ee ee BCP69 PNP medium power transistor FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 20 V). 1 base 2,4 collector APPLICATIONS 3 emitter General purpose switching and amplification e Power applications such as audio output stages. 4 2,4 DESCRIPTION PNP medium power transistor in a SOT223 plastic 1 package. NPN complement: BCP68. Ue UU 1 2 3 Top view MAM288 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcsBo collector-base voltage open emitter - 32 Vv VcEo collector-emitter voltage open base - 20 Vv VeEBo emitter-base voltage open collector - -5 Vv Ic collector current (DC) - -1 A lcm peak collector current - -2 A IBM peak base current - 200 mA Prot total power dissipation Tamb < 25 C; note 1 - 1.35 WwW Tstg storage temperature 65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature 65 +150 C Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see Thermal considerations for SOT223 in the General Part of associated Handbook. 1999 Apr 08Philips Semiconductors Product specification PNP medium power transistor BCP69 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rih ja thermal resistance from junction to ambient note 1 91 K/W Rihj-s thermal resistance from junction to soldering point 10 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see Thermal considerations for SOT223 in the General Part of associated Handbook. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT IcBo collector cut-off current le = 0; Veg = -25 V - - -100 | nA le = 0; Vog = -25 V; Tj = 150 C - - -10 |pA lEBo emitter cut-off current Ic = 0; Vep=-5 V - - -100 | nA hee DC current gain Ic =-5 MA; Vce =-10 V 50 - - I = 500 mA; Voce =-1 V3 see Fig.2 | 85 - 375 Ic =-1 A; Voce = -1 V; see Fig.2 60 - - DC current gain I = 500 mA; Voce = 1 V; see Fig.2 BCP69-16 100 - 250 BCP69-25 160 - 375 VecEsat collector-emitter saturation voltage | Ic = 1 A; Ig = -100 mA - - 500 | mV VBE base-emitter voltage Ic =-5 MA; Vce =-10 V - 620 |- mV Ic =-1A; Voce =-1V - - -1 Vv C. collector capacitance le = le = 0; Vop = -5 V; f= 1 MHz - 48 - pF fr transition frequency Ic =-10 mA; Voce = -5 V; f = 100 MHz | 40 - - MHz heey DC current gain ratio of the llc] = 0.5 A; |Vcel =1V - - 1.6 Rees complementary pairs 1999 Apr 08 3Philips Semiconductors Product specification PNP medium power transistor BCP69 MGD845 400 rE 300 or [=e IN 200 N 100 \ -1071 -1 -10 -10? -108 -104 Ig (mA) Voce = -1 V. Fig.2 DC current gain; typical values. 1999 Apr 08 4Philips Semiconductors Product specification PNP medium power transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads $OT223 D >] < [al | ato / \ \ if \ I i \ oe _ / 4 U \ ob ae . He EV OR b, Lal I 4 I I Q | oe I TT ey Tt + a t 1 TI] 2 3 Lp I I I a yl) Lemar! 0 2 4mm Linaitiriitisiitiiiit scale DIMENSIONS (mm are the original dimensions) UNIT A Ay bp by c D E e ey He | Lp Q v w y 1.8 | 0.10 | 0.80] 3.1 | 032] 67 | 37 73 | 1.1 | 0.95 mm | 45 | 001] 060] 29 |o22| 63 | 33 | * | 23 |] 67 | o7 |oas| %% | Ot) % REFERENCES OUTLINE EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE 96-44-44 SOT223 E-} 97-02-28 1999 Apr 08