fA MOSPEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for low and medium frequency power application such as power switching,audio amplifier,hammer drivers,and shunt and series regulators. FEATURES: * High Gain Darlington Performance * DC Current Gain hFE = 3000(Typ) @ |, =5.0A * True Complementary Specfications MAXIMUM RATINGS NPN PNP 2N6383 2N6648 2N6384 2N6649 2N6385 2N6650 10 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 40-80 VOLTS 100 WATTS To , TEMPERATURE( C) Characteristic Symbol | 2N6383 | 2N6384 | 2N6385 | Unit 2N6648 | 2N6649 | 2N6650 Collector-Emitter Voltage Veo 40 60 80 Vv COllector-Base Voltage Vego 40 60 80 V Emitter-Base Voltage Vero 5.0 V Collector Current-Continuous le 10 A -Peak lom 15 Base Current Ip 0.25 A Total Power Dissipation @T,= 25C Py 100 Ww Derate above 25C 0.571 wrc Operating and Storage Junction Ty. Tst C Temperature Range ~ 65 to +200 THERMAL CHARACTERISTICS Characteristic Symboi Max Unit Thermal Resistance Junction to Case Rejc 1.75 C/W FIGURE -1 POWER DERATING 400 ao 80 co PS 5 NN % 40 : N 20 fo ; 0 2 50 75 100 125 150 175 200 i c 4 6 a J H l 2 } Tle Sot | A | PIN 1.BASE 2.EMITER COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 38.75 | 39.96 B 19.28 | 22.23 Cc 796 9.28 D 11.18 | 12.19 E 29.20 | 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 | 30.40 | 16.64 | 17.30 J 3.88 4.36 K 10.67 | 11.182N6383, 2N6384,2N6385 NPN / 2N6648, 2N6649, 2N6650 PNP A ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Veeo(sus) Vv (I, = 200 mA, Ip = 0) 2N6383,2N6648 40 2N6384,2N6649 60 2N6385,2N6650. 80 Collector Cutoff Current lcEo mA (Veg = 40 V, 1, = 0) 2N6383,2N6648 1.0 (Veg = 60 V, 1, = 0) 2N6384,2N6649 1.0 ( Veg = 80 V, 1, = 0) 2N6385,2N6650 1.0 Collector Cutoff Current leex mA ( Veg = 40 V, Vegiorr = 1-5 V) 2N6383,2N6648 0.3 ( Veg = 60 V, Vegiorr) = 1.5 V ) 2N6384,2N6649 0.3 ( Veg = 80 V, Veciorr) = 1-5 V ) 2N6385,2N6650 0.3 ( Veg = 40 V, Vagiorry = 1-5 V. Te = 125C) 2N6383,2N6648 3.0 ( Veg = 60 V, Vegiorr) = 1-5 V, Te = 125C ) 2N6384,2N6649 3.0 ( Veg = 80 V, Vegiorr = 1.5 V. Te = 125C ) 2N6385,2N6650 3.0 Emitter Cutoff Current lepo mA (Veg = 5.0 V [p= 0 ) 10 ON CHARACTERISTICS (1) DC Current Gain hFE (1g = 5:0 A, Veg = 3.0V) 1000 20000 (1g =10A, Veg = 3.0 V) 100 Collector-Emitter Saturation Voltage Vece{sat) Vv (ig =5.0A, Ip = 10 mA) 2.0 (Io = 10 A, Ip = 100 mA) 3.0 Base-Emitter On Voltage Vee;on) Vv (1g = 5.0 A, Veg = 3.0V) 2.8 (Ig = 10 A, Voge = 3.0 V) 4.5 DYNAMIC CHARACTERISTICS Small-Signal Current Gain Nee (Ig = 1.0A, Veg = 5.0 V, f = 1.0 KHz) 41000 Output Capacitance Cop pF (Veg = 10V, Ip = 0 , f= 1.0 MHZ) 200 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% Collector Collector 2N6383 2N6648 2N6384 a... 2N6649 Bose 2N6385 2N6650 =4ak =50 =4k ~50 Emitter Emitterhre , DC CURRENT GAIN V VOLTAGE (VOLTS) DC CURRENT GAIN Vog23.0V 10k 30C 0.1 05 0.7 1.0 2.0 3.0 50 7.0 10 te , COLLECTOR CURRENT (AMP) 02 03 "ON" VOLTAGES Ver@ Vee=3.0V Vee(ent) @ Ic/g=500 0.5 fe , COLLECTOR CURRENT (Amp) 3.0 5.0 10 1.0 0.1 02 2.0 03 0.5 Ic , COLLECTOR CURRENT (AMP) 2N6383,2N6384,2N6385 NPN / 2N6648,2N6649,2N6650 PNP a Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) t, TIME (us) COLLECTOR SATURATION REGION Tya28C 0.5 10 20 5.0 10 20 50 100 ls, BASE CURRENT (mA) 0.1 02 SWITCHING TIME Vec20 V icfg=500 Ty=25C ta 2.0 3.0 5.0 70. 10 Ie , COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) 5 10 ~+ Bonding Wire Limit 1 Second Breakdown Limit ~Thermaly Limited 0s at T.=25C (Singe Puse) 02 2N6384,2N6649 2N6385,2N6650 0.1 7.0 10 20 30 50 80 40 5.0 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on T.yp=200 C;T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided T.ypgS200C,At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown.