MOTOROLA SC {LXSTRS/R FF 6367254 MOTOROLA SC (XSTRS/R F) _ gep 82056 _ D Rating Symbol | MMBTAOS | MMBTAOG | Unit Collector-Emitter Voltage VcEO 60 80 Vide M M BTAOS Collector-Base Voltage VcBo 60 80 Vde M M BTAO6 Emitter-Base Voltage VEBO 4.0 Vde Collector Current Continuous Ic 500 mAdc CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS qb de esezesy coazose 4 MAXIMUM RATINGS T- 29 -/ 5 Characteristic Symbot Max Unit Tocin ae 3 Collector Tota! Device Dissipation FR-6 Board,* Pp 225 mW Ta = 28C wm: Derate above 28C 1.8 mWPC 1 Zs Base Thermal Resistance Junction to Ambient ReJA 556 CimW 1 9 a Total Device Dissipation Pp 300 mw 2 Emitier Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWrc Thermal Resistance Junction to Amblent Raja 417 CimW DRIVER TRANSISTOR Junction and Storage Temperature Ty. Tstg 150 c *FRS = 1.0 x 0.75 x 0.62 in. NPN SILICON **Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. DEVICE MARKING { MMBTAOS = 1H; MMBTAGS = 1G | ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted.) | Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) V(BRICEO Vde {I = 1.0 mAde, Ig = 0) MMBTACS 60 - MNMB8TAO06 80 - Emitter-Base Breakdown Voltage ViBR)EBO 4.0 - Vde (le = 100 pAde, Ic = 0) Collector Cutoff Current IcEO - 0.1 pAde (Vce = 60 Vdc, Ip = 0) Collector Cutoff Current IcBo pAde (Vop = 60 Vde, Ig = 0) MMBTAOS _ 0.1 (Vcp = 80 Vdc, Ie = 0) MMBTAOS - 0.1 ON CHARACTERISTICS DC Current Gain hee _ (Ic = 10 mAdc, Voce = 1.0 Vdc} 50 - (ig = 100 mAdc, VcE = 1.0 Vde) 50 _ Collector-Emitter Saturation Voltage VcE(sat) _ 0.25 Vde (Ic = 100 mAdc, Ip = 10 mAdc} Base-Emitter On Voltage VBE(on) _ 1.2 Vde {Ie = 100 mAdc, VcE = 1,0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain ~- Bandwidth Product(2) fr 100 _ MHz (ic = 10 mA, VcE = 2.0 V, f = 100 MHz) (1) Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0%, (2) ff is defined as the frequency at which |hfel extrapolates to unity. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-121 eeMOTOROLA SC LXSTRS/R FY Tb DE eab7es4 o06e057 & I -- - oe tr 96D 82057. D wee - - . 6367254 MOTOROLA SG CXSTRS/R F) ; 729-89 I MAXIMUM RATINGS . Rating Symbol Value Unit MMBTA13 Collector-Emitter Voltage Voces 30 Vde Collector-Base Voltage VcBo 30 Vdc MMBTA14 Emitter-Base Voltage VEBO 10 Vde CASE 318-02/03, STYLE 6 Collector Current Continuous Ic 300 mAde SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Collector 3 Characteristic Symbol Max Unit Total Device Dissipation FR-6 Board,* Pp 225 mw Q Ta = 28C B Derate above 26C 1.8 mWwrc 1 ge | Thermal Resistance Junction to Ambient Raa 556 Cimw 2 Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 25C Emitter 1 Derate above 25C 24 mwWrc Thermal Resistance Junction to Ambient Raa 417 CimW Junction and Storage Temperature Ty Tstg 150 C DARLINGTON AMPLIFIER *FR-6 = 1.0 x 0.75 x 0.62 In. TRANSISTOR **Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. NPN SILICON DEVICE MARKING [ MMBTAI3 = 1M; MMBTA14 = 1N | Refer to 2N6426 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic i Symbol Min Max | Unit OFF GHARACTERISTICS Collector-Emitter Breakdown Voltage VIBRICES 30 ~ Vde {lc = 100 pAde, Ig = 0) Collector Cutoff Current IcBo _ 100 nAdc (Veg = 30 Vdc, Ie = 0) Emitter Cutoff Current lEBO _~ 100 nAde (Vpe = 10 Vde, Ic = 0) ON CHARACTERISTICS(1} DC Current Gain hee {Ig = 10 mAde, Vcg = 5.0 Vdel MMBTA13 5000 _ MMBTA14 10,000 -_ (ig = 100 mAde, Vog = 5.0 Vde) MMBTA13 10,000 - MMBTA14 20,000 =_ Collector-Emitter Saturation Voltage VcE{sat) - 15 Vde : {Ic = 100 mAde, lg = 0.1 mAdc) Base-Emitter On Voltage VBE - 2.0 Vde (Ig = 100 mAde, VcE = 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product(2) ft 126 - MHz (Ic = 10 mAde, Voge = 5.0 Vde, f = 100 MHz) (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%. (2) fT = [hgel * ftest- MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-122MOTOROLA SC {XSTRS/R FT 6367254 MOTOROLA SC CXSTRS/R F) MAXIMUM RATINGS AT See OLE Rating Symbol Value Unit Collector-Emitter Voitage VCEO 40 Vde Emitter-Base Voltage VEBO 40 Vdc Collector Current Continuous Ic 100 mAdc THERMAL CHARACTERISTICS Ch isti Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mW Ta = 28C Derate above 25C 1.8 mwrc Thermal Resistance Junction to Ambient Raa 556 CimW Total Device Dissipation Pp 300 mW Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mwrc Thermal Resistance Junction to Ambient Resa 417 CimW Junction and Storage Temperature Tye Tstg 150 C *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING 9h DES bab?eS4 0082054 a J 96D 82058 OD MMBTA20 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) 3 Collector Ss as 2 Emitter GENERAL PURPOSE AMPLIFIER NPN SILICON Te 29I-IS | MMBTA20 = 1C ELECTRICAL CHARACTERISTICS [Ta = 25C unless otherwise noted.) Refer to MPS3904 for graphs. | Characteristic [ Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BRICEO 40 _ Vde {le = 1.0 mAde, Ig = 0) Emitter-Base Breakdown Voltage VIBRJEBO 4.0 _ Vde (ig = 100 pAde, Ic = 0) Collector Cutoff Current IcBo ~ 400 nAdec (Vop = 30 Vdc, Ig = 0) ON CHARACTERISTICS DC Current Gain hrE 40 400 _ (lq = 5.0 mAde, VcE = 10 Vdc) Collector-Emitter Saturation Voltage VcE(sat) _ 0.25 Vde (lc = 10 mAde, Ig = 1.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 125 - MHz (ic = 5.0 mAde, Veg = 10 Vde, f = 100 MHz) Output Capacitance Cobo _- 4.0 pF (Vog = 10 Vde, ig = 0, f = 100 kHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-123 t [ r iMOTOROLA SC {XSTRS/R Fd a6 de ffese72s4 ooazoss o ff oe en ee we ee S nee re te go - oe - - meee ee me ew - D 6367254 MOTOROLA SC (XSTRS/R FD _ ___.. 96D 82059. dD .. T2915 MAXIMUM RATINGS Rating Symbol | MMBTA42 | MMBTA43 | Unit MMBT,. 42 Collector-Emitter Voltage VCEO 300 200 Vde A Collector-Base Voltage VcBo 300 200 Vde MMBTA43 Emitter-Base Voltage VEBO 6.0 6.0 Vdc CASE 318-02/03, STYLE 6 f Collector Current Continuous ie 500 mAdc SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Collector Total Device Dissipation FR-5 Board,* Pp 225 mw Ta = 25 a: Derate above 25C 1.8 mWPC se 1 TRY tase Thermal Resistance Junction to Ambient Rea 556 CimW 2 Total Device Dissipation Pp 300 mW 2 Emitter Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWwrc Thermal Resistance Junction to Ambient Rea 417 CimW Junction and Storage Temperature Ty. Tstg 150 C HIGH VOLTAGE TRANSISTOR *FR-5 = 1,0 x 0.75 x 0.62 in. NPN SILICON **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING | MMBTA42 = 1D; MMBTA43 = 1E | Refer to MPSA42 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol | Min Max | Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) V(BR)CEO Vde (Ic = 1.0 mAde, Ip = 0) MMBTA42 300 MMBTA43 200 _ Collector-Base Breakdown Voltage ViBRICBO Vde (lo = 100 pAde, Ie = 0) MMBTA42 300 - MMBTA43 200 - Emitter-Base Breakdown Voltage V(BR)EBO 6.0 _ Vdc (Ile = 100 pAde, Ip = 0) Collector Cutoff Current IcBo pAdc (Veg = 200 Vae, Ie = 0) MMBTA42 - 0.1 (Vcp = 160 Vde, IE = 0) MMBTA43 - 0.1 Emitter Cutoff Current lEBO pAde (VBE = 6,0 Vde, Ic = 0} MMBTA42 _ 0.1 (Vpe = 4.0 Vde, Ic = 0) MMBTA43 _ 0.1 ON CHARACTERISTICS(1) DC Current Gain hee ~ {Ic = 1.0 mAdc, Veg = 10 Vdc) Both Types 25 _ {lc = 10 mAde, VCE = 10 Vde} Both Types 40 _ {Il = 30 mAdc, VoE = 10 Vde) MMBTA42 40 - MMBTA43 40 Collector-Emitter Saturation Voltage Vck(sat) Vde {le = 20 mAde, Ig = 2.0 mAdc) MMBTA42 _ 05 MMBTA43 ~ 0.5 Base-Emitter Saturation Voltage VBE(sat) _ 0.9 Vde {lc = 20 mAde, ig = 2,0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 50 _ MHz (Ic = 10 mAdc, VcE = 20 Vdc, f = 100 MHz) Collector-Base Capacitance Cob pF (Veg = 20 Vde, Iz = 0, f = 1.0 MHz) MMBTA42 3.0 MMBTA43 _ 4.0 {1} Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-124qe deBesn7es4 ooaeono. f aes eee 96D 82060. DBD 6367254 MOTOROLA SC XSTRS/R F) a I MAXIMUM RATINGS 7 "AGS Rating Symbo! | MMBTAS5S MMBTAS56 | Unit Collector-Emitter Voltage VCEO 60 80 Vde MM BTA55 Collector-Base Voltage VcBO 60 80 Vde M M BTA56 Emitter-Base Voltage VEBO 40 Vde 3.5 6 Collector Current Continuous Ic 600 mAdc CASE 318-02/03, STYLE SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Collector Totai Device Dissipation FR-5 Board,* Pp 225 mw Ta = 25C a: Derate above 25C 1.8 mWPC o Base Thermal Resistance Junction to Ambient Rasa 566 CimW 1 2 o | Tota! Device Dissipation Pp 300 mw ? Emitter Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mwPc Thermal Resistance Junction to Ambient Resa 417 *CimW DRIVER TRANSISTOR Junction and Storage Temperature Ty. Tstg 150 C *FRG = 1,0 x 0.75 x 0.62 in. PNP SILICON **Alumina = 0.4 x 0,3 x 0.024 in. 99.5% alumina. DEVICE MARKING . | MMBTASS = 2H; MMBTAS6 = 2G ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) i Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) ViBRICEO Vde {Ig = 1.0 mAde, Ig = 0) MMBTAB5 60 MMBTAS6 80 - Emitter-Base Breakdown Voltage V(BRIEBO 4.0 _ Vde {IE = 100 pAde, Ic = 0) Collector Cutoff Current IcEO _ 0.1 pAdc (Vee = 60 Vde, Ig = 0) Collector Cutoff Current IcR0 pAde {Vcg = 60 Vde, Iz = 0) MMBTAS5 Or - (VcB = 80 Vde, Iz = 0) MMBTA56 _ 04 ON CHARACTERISTICS DC Current Gain hrE (Ic = 10 mAde, VcE = 1.0 Vdc) 50 _ (l = 100 mAde, VcE = 1.0 Vde) 50 _ Collector-Emitter Saturation Voltage VCE(sat) _ 0.25 Vde (l = 100 mAdc, Ig = 10 mAdc) Base-Emitter On Voltage VBE(on) _ 1.2 Vde {lc = 100 mAde, VcE = 1.0 Vde) 7 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product(2} (lc = 100 mAdc, VCE = 1.0 Vde, f = 100 MHz) (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%. (2) fy is defined as the frequency at which {hrel extrapolates to unity. TTT MOTOROLA SMALL-SIGNAL SEMICONDUCTORS Se To Lect ree 3-125