DMN63D1LW
Document number: DS37576 Rev. 2 - 2
1 of 6
www.diodes.com
September 2015
© Diodes Incorporated
NEW PROD UCT
ADVA N C ED I N F ORM ATI O N
DMN63D1LW
NEW PROD UCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON) max
ID max
TA = +25°C
60V
2Ω @ VGS = 10V
380mA
3Ω @ VGS = 5V
310mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Backlighting
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN63D1LW-7
SOT323
3000/Tape & Reel
DMN63D1LW-13
SOT323
10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
B
C
D
E
F
G
H
I
J
K
L
M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT323
Top View
ESD Protected Gate
Top View
D
GS
Equivalent Circuit
e3
D
S
G
Gate Protection
Diode
D36
YM
D36 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
2 of 6
www.diodes.com
September 2015
© Diodes Incorporated
NEW PROD UCT
ADVA N C ED I N F ORM ATI O N
DMN63D1LW
NEW PROD UCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
380
300
mA
t<5s
TA = +25°C
TA = +70°C
ID
430
340
mA
Maximum Continuous Body Diode Forward Current (Note 6)
IS
0.5
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
IDM
1.2
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
310
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
411
°C/W
t<5s
371
Total Power Dissipation (Note 6)
PD
410
mW
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
311
°C/W
t<5s
257
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
—
—
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS
—
—
1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
1.0
1.6
2.5
V
VDS = 10V, ID = 1mA
Static Drain-Source On-Resistance
RDS(ON)
—
—
—
2.0
3.0
Ω
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
Forward Transfer Admittance
|Yfs|
80
—
—
mS
VDS = 10V, ID = 0.2A
Diode Forward Voltage
VSD
—
0.75
1.1
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
30
—
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
—
4.2
—
pF
Reverse Transfer Capacitance
Crss
—
2.9
—
pF
Gate Resistance
Rg
—
133
—
Ω
f = 1MHz, VGS = 0V, VDS = 0V
Total Gate Charge
Qg
—
304
—
pC
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
Qgs
—
203
—
pC
Gate-Drain Charge
Qgd
—
84
—
pC
Turn-On Delay Time
tD(ON)
—
3.9
—
ns
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 200mA
Turn-On Rise Time
tR
—
3.4
—
ns
Turn-Off Delay Time
tD(OFF)
—
15.7
—
ns
Turn-Off Fall Time
tF
—
9.9
—
ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
3 of 6
www.diodes.com
September 2015
© Diodes Incorporated
NEW PROD UCT
ADVA N C ED I N F ORM ATI O N
DMN63D1LW
NEW PROD UCT
0
1
2
3
4
5
0.001 0.01 0.1 1
RDS(ON), STATIC DRAIN-SOURCE ON-STATE
RESISTANCE (Ω)
ID, DRAIN-SOURCE CURRENT (A)
Figure 6. Static Drain-Source On-Resistance vs.
Drain Current
VGS = 5.0V
TA= -55oCTA= 25oC
TA= 85oCTA= 125oCTA= 150oC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 1 2 3 4 5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS = 3.0V
VGS = 4.0V
VGS = 5.0V
VGS = 6.0V
VGS = 8.0V
VGS = 10.0V
0
0.5
1
1.5
2
2.5
-50 -25 025 50 75 100 125 150
RDS(ON), STATIC DRAIN-SOURCE, ON-
RESISTANCE (Ω)
TJ, JUNCTION TEMPERATURE (℃)
Figure 2. On-Resistance Variation with Temperature
VGS = 10.0V, ID= 300mA
VGS = 10.0V, ID= 150mA
0
0.4
0.8
1.2
1.6
2
-50 -25 025 50 75 100 125 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 3. Gate Threshold Variation with
Temperature
ID = 250µA
0
0.4
0.8
1.2
1.6
2
-50 -25 025 50 75 100 125 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 4. Gate Threshold Variation with
Temperature
ID= 1mA
0.001
0.01
0.1
1
1 1.5 2 2.5 3 3.5 4 4.5 5
ID, DRAIN CURRENT (A)
VGS, GATE SOURCE VOLTAGE (V)
Figure 5. Typical Transfer Characteristics
VDS = 10.0V
TA= 125oC
TA= 150oC
TA= 85oC
TA= 25oC
TA= -55oC
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
4 of 6
www.diodes.com
September 2015
© Diodes Incorporated
NEW PROD UCT
ADVA N C ED I N F ORM ATI O N
DMN63D1LW
NEW PROD UCT
0
1
2
3
4
5
0.001 0.01 0.1 1
RDS(ON), STATIC DRAIN-SOURCE ON-STATE
RESISTANCE (Ω)
ID, DRAIN-SOURCE CURRENT (A)
Figure 7. Static Drain-Source On-Resistance vs.
Drain Current
VGS = 10.0V
TA= 150oC
TA= 125oC
TA= 85oC
TA= 25oCTA= -55oC
1
1.2
1.4
1.6
1.8
2
2 3 4 5 6 7 8 9 10
RDS(ON), STATIC DRAIN-SOURCE, ON-
RESISTANCE (Ω)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 8. Static Drain-Source On-Resistance vs.
Gate-Source Voltage
TJ = 25℃
ID= 300mA
ID= 150mA
0.001
0.01
0.1
1
0 0.5 1 1.5
IDR, REVERSE DRAIN CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Reverse Drain Current
TJ= 150oC
TJ= 125oC
TJ= 85oC
TJ= 25oC
TJ= -55oC
VGS = 0V
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss Crss
0.001
0.01
0.1
1
10
0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. SOA, Safe Operation Area
TJ(Max)=150℃
TA=25℃
Single Pulse
DUT on 1*MRP board
VGS=10V
RDS(ON) LIMITED
PW=10s DC
PW=1s
PW=100ms
PW=10ms
PW=1ms
PW=100µs
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
5 of 6
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September 2015
© Diodes Incorporated
NEW PROD UCT
ADVA N C ED I N F ORM ATI O N
DMN63D1LW
NEW PROD UCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT323
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
0.95
b
0.25
0.40
0.30
c
0.10
0.18
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
e1
1.20
1.40
1.30
F
0.375
0.475
0.425
L
0.25
0.40
0.30
a
8°
All Dimensions in mm
0.001
0.01
0.1
1
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
D=0.9
D=0.7
D=0.5
D=0.3
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
RθJA(t)=r(t) * RθJA
RθJA=408°C/W
Duty Cycle, D=t1 / t2
a
E1E
Fe1
b
L
c
e
A2
A1
D
DMN63D1LW
Document number: DS37576 Rev. 2 - 2
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September 2015
© Diodes Incorporated
NEW PROD UCT
ADVA N C ED I N F ORM ATI O N
DMN63D1LW
NEW PROD UCT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
Y1 G
Y
X
C
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.470
Y
0.600
Y1
2.500
