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IRLI2910PbF
PD- 95652
7/26/04
Lead-Free
IRLI2910PbF
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IRLI2910PbF
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IRLI2910PbF
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IRLI2910PbF
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IRLI2910PbF
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IRLI2910PbF
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Peak Diode Recovery dv/dt Test Circuit
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig -14 For N Channel HEXFETS
IRLI2910PbF
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Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
TO-220 Full-Pak Part Marking Information
WITH ASSEMBLY
EXAMPLE: THIS IS AN IRFI840G
L OT CODE 3432
ASSEMBLED ON WW 24 199 9
IN THE ASSEMBLY LINE "K"
PAR T NUMBE R
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
LOGO 34 32
924K
IRFI840G
DATE CODE
YE AR 9 = 1999
WEEK 24
LINE K
Note: "P" in assembly line
position indicates "Lead-Free"
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
