© Semiconductor Components Industries, LLC, 2013
October, 2018 Rev. 10
1Publication Order Number:
PZT2222AT1/D
PZT2222A
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT223
package which is designed for medium power surface mount
applications.
Features
PNP Complement is PZT2907AT1
The SOT223 Package Can be Soldered Using Wave or Reflow
SOT223 Package Ensures Level Mounting, Resulting in Improved
Thermal Conduction, and Allows Visual Inspection of Soldered
Joints
The Formed Leads Absorb Thermal Stress During Soldering,
Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 75 Vdc
EmitterBase Voltage
(Open Collector)
VEBO 6.0 Vdc
Collector Current IC600 mAdc
Total Power Dissipation
up to TA = 25°C (Note 1)
PD
1.5
W
Storage Temperature Range°Tstg 65 to +150 °C
Junction Temperature°TJ150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x
0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance,
JunctiontoAmbient
RqJA 83.3 °C/W
Lead Temperature for Soldering,
0.0625 from case
Time in Solder Bath
TL260
10
°C
Sec
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
MARKING DIAGRAM
SOT223 (TO261)
CASE 318E04
STYLE 1
Device Package Shipping
ORDERING INFORMATION
PZT2222AT1G SOT223
(PbFree)
1,000 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A = Assembly Location
Y = Year
M = Month Code
G= PbFree Package
BASE
1
COLLECTOR
2, 4
3
EMITTER
SOT223 PACKAGE
NPN SILICON TRANSISTOR
SURFACE MOUNT
PZT2222AT3G SOT223
(PbFree)
4,000 Tape & Reel
AYM
P1FG
G
(Note: Microdot may be in either location)
SPZT2222AT1G SOT223
(PbFree)
1,000 Tape & Reel
123
4
PZT2222A
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 Vdc
CollectorBase Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO °75°Vdc
EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 Vdc
BaseEmitter Cutoff Current (VCE = 60 Vdc, VBE = 3.0 Vdc) IBEX 20 nAdc
CollectorEmitter Cutoff Current (VCE = 60 Vdc, VBE = 3.0 Vdc) ICEX 10 nAdc
EmitterBase Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO 100 nAdc
CollectorBase Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
ICBO
10
10
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55°C)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
35
50
70
35
100
50
40
300
CollectorEmitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.3
1.0
Vdc
BaseEmitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.6
1.2
2.0
Vdc
Input Impedance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
°hie°
2.0
0.25
8.0
1.25
kW
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
8.0x104
4.0x104
SmallSignal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
ťhfe ť
50
75
300
375
Output Admittance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
°hoe°
5.0
25
35
200
mmhos
Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz) F4.0 dB
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
300
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc8.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce25 pF
SWITCHING TIMES (TA = 25°C)
Delay Time (VCC = 30 Vdc, IC = 150 mAdc,
IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)
Figure 1
td10 ns
Rise Time tr25
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB(on) = IB(off) = 15 mAdc)
Figure 2
ts225 ns
Fall Time tf60
PZT2222A
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3
Vi
90%
10%
tp
tr
0
VCC
R2
R1
ViD.U.T.
Vo
Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time
Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time
Vi = 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 W, R2 = 200 W.
PULSE GENERATOR: OSCILLOSCOPE:
PULSE DURATION tp3 200 ns INPUT IMPEDANCE Zi> 100 kW
RISE TIME tr3 2 ns INPUT CAPACITANCE Ci< 12 pF
DUTY FACTOR d= 0.02 RISE TIME tr< 5 ns
tf100 ms
-13.8 V
0
+16.2 V
Vi
TIME
VCC
Vo
OSCILLOSCOPE
D.U.T.
Vi
R2
R3
R4
D1
R1
VBB
TYPICAL CHARACTERISTICS
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
10001001010.1
0.01
0.1
1
10001001010.1
0.2
0.3
0.5
0.6
0.8
0.9
1.1
1.2
VCE, COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
TA = 25°C
TA = 55°C
TA = 150°C
IC/IB = 10
0.4
0.7
1.0
TA = 25°C
TA = 55°C
TA = 150°C
IC/IB = 10
PZT2222A
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4
TYPICAL CHARACTERISTICS
Figure 5. DC Current Gain vs. Collector
Current
Figure 6. Saturation Region
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
10001001010.1
10
100
1000
1001010.10.010.001
0
0.2
0.6
0.8
1.0
1.4
1.6
2.0
Figure 7. BaseEmitter TurnOn Voltage vs.
Collector Current
Figure 8. Capacitance
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)
10001001010.1
0.2
0.3
0.4
0.6
0.7
0.8
1.0
1.1
1001010.1
1
10
100
Figure 9. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
100101
1
10
100
1000
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(ON), BASEEMITTER ON VOLTAGE (V)
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
TA = 25°C
TA = 55°C
TA = 150°C
VCE = 6 V
0.4
1.2
1.8 TA = 25°C
600 mA
300 mA
100 mA
10 mA
IC = 1 mA
0.5
0.9
TA = 25°C
TA = 55°C
TA = 150°C
VCE = 2 V
Cibo
Cobo
0.0001
1 s
0.1
0.01
0.001
Single Pulse Test at TA = 25°C
SOT223 (TO261)
CASE 318E04
ISSUE R
DATE 02 OCT 2018
SCALE 1:1
q
q
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
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DOCUMENT NUMBER:
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Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
SOT223 (TO261)
© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
SOT223 (TO261)
CASE 318E04
ISSUE R
DATE 02 OCT 2018
STYLE 4:
PIN 1. SOURCE
2. DRAIN
3. GATE
4. DRAIN
STYLE 6:
PIN 1. RETURN
2. INPUT
3. OUTPUT
4. INPUT
STYLE 8:
CANCELLED
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 7:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
4. CATHODE
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 2:
PIN 1. ANODE
2. CATHODE
3. NC
4. CATHODE
STYLE 9:
PIN 1. INPUT
2. GROUND
3. LOGIC
4. GROUND
STYLE 5:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. GATE
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
STYLE 12:
PIN 1. INPUT
2. OUTPUT
3. NC
4. OUTPUT
STYLE 13:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
A = Assembly Location
Y = Year
W = Work Week
XXXXX = Specific Device Code
G= PbFree Package
GENERIC
MARKING DIAGRAM*
AYW
XXXXXG
G
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42680B
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
SOT223 (TO261)
© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
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