BUH150G SWITCHMODE NPN Silicon Planar Power Transistor The BUH150G has an application specific state-of-art die designed for use in 150 W Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load. Features * Improved Efficiency Due to the Low Base Drive Requirements: * * * High and Flat DC Current Gain hFE Fast Switching Robustness Due to the Technology Developed to Manufacture this Device ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributions These Devices are Pb-Free and are RoHS Compliant* http://onsemi.com POWER TRANSISTOR 15 AMPERES 700 VOLTS, 150 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Sustaining Voltage VCEO 400 Vdc Collector-Base Breakdown Voltage VCBO 700 Vdc Collector-Emitter Breakdown Voltage VCES 700 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous - Peak (Note 1) IC ICM 15 25 Adc Base Current - Continuous - Peak (Note 1) IB IBM 6 12 Adc PD 150 1.2 W W/_C TJ, Tstg -65 to 150 _C Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 0.85 _C/W Thermal Resistance, Junction-to-Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 5 Seconds TL 260 _C Total Device Dissipation @ TC = 25_C Derate above 25C Operating and Storage Temperature TO-220AB CASE 221A-09 STYLE 1 1 2 3 MARKING DIAGRAM BUH150G THERMAL CHARACTERISTICS Characteristics Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. AY WW BUH150 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 6 1 Device Package Shipping BUH150G TO-220 (Pb-Free) 50 Units / Rail Publication Order Number: BUH150/D BUH150G IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIII IIII III IIII III IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIII IIIIII IIII III IIII III IIIIIIII IIII IIIIIIII IIIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 400 460 Vdc Collector-Base Breakdown Voltage (ICBO = 1 mA) VCBO 700 860 Vdc Emitter-Base Breakdown Voltage (IEBO = 1 mA) VEBO 10 12.3 Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO 100 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25C @ TC = 125C ICES 100 1000 mAdc Collector Base Current (VCB = Rated VCBO, VEB = 0) @ TC = 25C @ TC = 125C ICBO 100 1000 mAdc IEBO 100 mAdc Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) ON CHARACTERISTICS Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 0.4 Adc) @ TC = 25C @ TC = 125C VBE(sat) 1 1.25 Vdc VCE(sat) 0.16 0.15 0.4 0.4 Vdc (IC = 10 Adc, IB = 2 Adc) @ TC = 25C 0.45 1 Vdc (IC = 20 Adc, IB = 4 Adc) @ TC = 25C 2 5 Vdc DC Current Gain (IC = 20 Adc, VCE = 5 Vdc) @ TC = 25C @ TC = 125C hFE 4 2.5 7 4.5 - (IC = 10 Adc, VCE = 5 Vdc) @ TC = 25C @ TC = 125C 8 6 12 10 - (IC = 2 Adc, VCE = 1 Vdc) @ TC = 25C @ TC = 125C 12 14 20 22 - (IC = 100 mAdc, VCE = 5 Vdc) @ TC = 25C 10 20 - DYNAMIC SATURATION VOLTAGE VCE(dsat) IC = 5 Adc, IB1 = 1 Adc VCC = 300 V @ TC = 25C 1.5 V @ TC = 125C 2.8 V IC = 10 Adc, IB1 = 2 Adc VCC = 300 V @ TC = 25C 2.4 V @ TC = 125C 5 V fT 23 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob 100 150 pF Input Capacitance (VEB = 8 Vdc, f = 1 MHz) Cib 1300 1750 pF Dynamic Saturation Voltage: Determined 3 ms after rising IB1 reaches 90% of final IB1 (see Figure 19) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz) http://onsemi.com 2 BUH150G IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIII IIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIII IIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 ms) Turn-on Time Storage Time Fall Time IC = 2 Adc, IB1 = 0.2 Adc IB2 = 0.2 Adc VCC = 300 Vdc Turn-off Time Turn-on Time Storage Time Fall Time IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 300 Vdc Turn-off Time Turn-on Time Turn-off Time Turn-on Time Turn-off Time IC = 5 Adc, IB1 = 0.5 Adc IB2 = 0.5 Adc VCC = 300 Vdc IC = 10 Adc, IB1 = 2 Adc IB2 = 2 Adc VCC = 300 Vdc @ TC = 25C ton 200 300 ns @ TC = 25C ts 5.3 6.5 ms @ TC = 25C tf 240 350 ns @ TC = 25C toff 5.6 7 ms @ TC = 25C ton 100 200 ns @ TC = 25C ts 6.1 7.5 ms @ TC = 25C tf 320 500 ns @ TC = 25C toff 6.5 8 ms @ TC = 25C @ TC = 125C ton 450 800 650 ns @ TC = 25C @ TC = 125C toff 2.5 3.9 3 ms @ TC = 25C @ TC = 125C ton 500 900 700 ns @ TC = 25C @ TC = 125C toff 2.25 2.75 2.75 ms SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time @ TC = 25C @ TC = 125C tfi 110 160 250 ns @ TC = 25C @ TC = 125C tsi 6.5 8 8 ms Crossover Time @ TC = 25C @ TC = 125C tc 235 240 350 ns Fall Time @ TC = 25C @ TC = 125C tfi 110 170 250 ns @ TC = 25C @ TC = 125C tsi 6 7.8 7.5 ms Crossover Time @ TC = 25C @ TC = 125C tc 250 270 350 ns Fall Time @ TC = 25C @ TC = 125C tfi 110 140 150 ns @ TC = 25C @ TC = 125C tsi 3.25 4.6 3.75 ms Crossover Time @ TC = 25C @ TC = 125C tc 275 450 350 ns Fall Time @ TC = 25C @ TC = 125C tfi 110 160 175 ns @ TC = 25C @ TC = 125C tsi 2.3 2.8 2.75 ms @ TC = 25C @ TC = 125C tc 250 475 350 ns Storage Time Storage Time Storage Time Storage Time Crossover Time IC = 2 Adc IB1 = 0.2 Adc IB2 = 0.2 Adc IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc IC = 5 Adc IB1 = 0.5 Adc IB2 = 0.5 Adc IC = 10 Adc IB1 = 2 Adc IB2 = 2 Adc http://onsemi.com 3 BUH150G TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 3 V TJ = 125C TJ = -20C 10 1 0.001 0.01 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 1 V TJ = 25C TJ = -20C 10 1 0.001 100 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) TJ = 125C Figure 1. DC Current Gain @ 1 Volt 100 10 IC/IB = 5 VCE = 5 V TJ = 125C TJ = 125C TJ = -20C 10 1 0.01 VCE , VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 0.1 1 10 0.01 IC, COLLECTOR CURRENT (AMPS) Figure 2. DC Current Gain @ 3 Volt 100 TJ = 25C 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 1 TJ = 25C TJ = -20C 0.1 0.01 0.001 100 0.01 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 100 Figure 4. Collector-Emitter Saturation Voltage Figure 3. DC Current Gain @ 5 Volt 10 1.5 IC/IB = 5 VBE , VOLTAGE (VOLTS) IC/IB = 10 VCE , VOLTAGE (VOLTS) TJ = 25C 1 TJ = 125C 0.1 1 TJ = -20C 0.5 TJ = 25C TJ = 125C TJ = 25C 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 0 0.001 100 Figure 5. Collector-Emitter Saturation Voltage 0.01 10 1 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Base-Emitter Saturation Region http://onsemi.com 4 100 BUH150G TYPICAL STATIC CHARACTERISTICS 1.5 2 TJ = 25C VCE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) IC/IB = 10 1 TJ = -20C TJ = 25C 0.5 TJ = 125C 1.5 1 20 A 15 A VCE(sat) (IC = 1 A) 0.5 5A 0 0.001 0.01 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0 0.01 100 Figure 7. Base-Emitter Saturation Region 1 IB, BASE CURRENT (A) 10 100 Figure 8. Collector Saturation Region 10000 900 Cib (pF) TJ = 25C TJ = 25C f(test) = 1 MHz 1000 Cob (pF) 100 BVCER @ 10 mA 800 BVCER (VOLTS) C, CAPACITANCE (pF) 0.1 8A 10 A 700 BVCER(sus) @ 200 mA 600 500 400 10 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 10 Figure 9. Capacitance 100 RBE (W) Figure 10. Resistive Breakdown http://onsemi.com 5 1000 BUH150G TYPICAL SWITCHING CHARACTERISTICS 12 2000 IB1 = IB2 VCC = 300 V PW = 40 ms 1800 1600 IC/IB = 10 10 25C 8 125C 1200 1000 t, TIME (s) t, TIME (ns) 1400 125C 800 TJ = 25C TJ = 125C IC/IB = 5 6 4 600 400 IC/IB = 10 2 25C 200 IC/IB = 5 0 0 0 3 9 12 6 IC, COLLECTOR CURRENT (AMPS) 15 15 Figure 12. Resistive Switch Time, toff 8 8 6 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH IC/IB = 10 7 6 t, TIME (s) IC/IB = 5 7 t, TIME (s) 5 10 IC, COLLECTOR CURRENT (AMPS) 0 Figure 11. Resistive Switching, ton 5 4 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 5 4 3 3 2 2 TJ = 125C TJ = 25C 1 TJ = 125C TJ = 25C 1 0 0 1 3 5 9 11 7 IC, COLLECTOR CURRENT (AMPS) 13 1 15 Figure 13. Inductive Storage Time, tsi 4 7 IC, COLLECTOR CURRENT (AMPS) 10 Figure 13 Bis. Inductive Storage Time, tsi 550 800 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 450 TJ = 125C TJ = 25C IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 700 600 tc 350 250 t, TIME (ns) t, TIME (ns) IB1 = IB2 VCC = 300 V PW = 20 ms tfi TC = 125C TC = 25C 500 tc 400 300 tfi 200 150 100 0 50 1 3 5 7 9 11 IC, COLLECTOR CURRENT (AMPS) 13 0 15 Figure 14. Inductive Storage Time, tc & tfi @ IC/IB = 5 2 8 4 6 IC, COLLECTOR CURRENT (AMPS) Figure 15. Inductive Storage Time, tc & tfi @ IC/IB = 10 http://onsemi.com 6 10 BUH150G TYPICAL SWITCHING CHARACTERISTICS 5 200 IC = 5 A t fi , FALL TIME (ns) 150 3 2 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 1 IC = 10 A TJ = 125C TJ = 25C 0 2 100 IC = 5 A 50 4 6 hFE, FORCED GAIN 0 10 8 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 mH IC = 10 A 3 5 4 6 7 hFE, FORCED GAIN 800 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 mH 700 600 TJ = 125C TJ = 25C IC = 10 A 500 400 IC = 5 A 300 200 100 3 4 8 Figure 17. Inductive Fall Time Figure 16. Inductive Storage Time t c , CROSSOVER TIME (ns) tsi , STORAGE TIME (s) 4 TJ = 125C TJ = 25C 5 6 7 hFE, FORCED GAIN 8 9 Figure 18. Inductive Crossover Time http://onsemi.com 7 10 9 10 BUH150G TYPICAL SWITCHING CHARACTERISTICS 10 VCE IC 9 90% IC 8 dyn 1 ms 7 dyn 3 ms tfi tsi 6 0V Vclamp 5 10% IC 10% Vclamp tc 4 90% IB 3 1 ms 2 IB IB 90% IB1 1 2 1 3 ms 0 0 3 TIME Figure 19. Dynamic Saturation Voltage Measurements 4 TIME 5 6 7 8 Figure 20. Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V IC PEAK 1 mF 150 W 3W 100 W 3W 100 mF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 MPF930 +10 V IB Iout A COMMON IB2 50 W RB2 MJE210 500 mF 150 W 3W MTP12N10 1 mF -Voff V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA http://onsemi.com 8 Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 BUH150G TYPICAL THERMAL RESPONSE There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC -VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21. TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 60 80 120 100 TC, CASE TEMPERATURE (C) 40 20 140 160 Figure 21. Forward Bias Power Derating 16 10 5 ms IC, COLLECTOR CURRENT (AMPS) 1 ms 10 ms 1 ms EXTENDED SOA IC, COLLECTOR CURRENT (AMPS) 100 DC 1 0.1 0.01 1 10 8 6 -5 V 4 0V 2 Figure 22. Forward Bias Safe Operating Area r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TC 125C LC = 4 mH 12 0 300 1000 100 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) GAIN 5 14 -1.5 V 400 500 600 700 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 800 Figure 23. Reverse Bias Safe Operating Area 1 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 RqJC(t) = r(t) RqJC RqJC = 0.83C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 10 t, TIME (ms) Figure 24. Typical Thermal Response (ZqJC(t)) for BUH150 http://onsemi.com 9 100 1000 BUH150G PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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