BUH150 - ON Semiconductor - Datasheet.Live

October, 2011 − Rev. 6

1Publication Order Number:

BUH150/D

BUH150G

SWITCHMODE NPN Silicon

Planar Power Transistor

The BUH150G has an application specific state−of−art die designed

for use in 150 W Halogen electronic transformers.

This power transistor is specifically designed to sustain the large

inrush current during either the startup conditions or under a short

circuit across the load.

Features

•Improved Efficiency Due to the Low Base Drive Requirements:

High and Flat DC Current Gain hFE

Fast Switching

•Robustness Due to the Technology Developed to Manufacture

this Device

•ON Semiconductor Six Sigma Philosophy Provides Tight and

Reproducible Parametric Distributions

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage VCEO 400 Vdc

Collector−Base Breakdown Voltage VCBO 700 Vdc

Collector−Emitter Breakdown Voltage VCES 700 Vdc

Emitter−Base Voltage VEBO 10 Vdc

Collector Current − Continuous

− Peak (Note 1)

IC

ICM

15

25

Adc

Base Current − Continuous

− Peak (Note 1)

IB

IBM

6

12

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25°C

PD150

1.2

W

W/_C

Operating and Storage Temperature TJ, Tstg −65 to 150 _C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 0.85 _C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

TL260 _C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

POWER TRANSISTOR

15 AMPERES

700 VOLTS, 150 WATTS

TO−220AB

CASE 221A−09

STYLE 1

1

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MARKING DIAGRAM

BUH150 = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

23

BUH150G

AY WW

Device Package Shipping

ORDERING INFORMATION

BUH150G TO−220

(Pb−Free)

50 Units / Rail

BUH150G

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2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

400

ÎÎÎ

460

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Base Breakdown Voltage

(ICBO = 1 mA)

ÎÎÎÎ

VCBO

ÎÎÎÎ

700

ÎÎÎ

860

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Breakdown Voltage

(IEBO = 1 mA)

ÎÎÎÎ

VEBO

ÎÎÎÎ

10

ÎÎÎ

12.3

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCES, VEB = 0)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ICES

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

1000

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Base Current

(VCB = Rated VCBO, VEB = 0)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ICBO

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

1000

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Cutoff Current

(VEB = 9 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

ÎÎÎ

1

ÎÎÎÎ

1.25

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 2 Adc, IB = 0.4 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

ÎÎÎ

0.16

0.15

ÎÎÎÎ

0.4

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 10 Adc, IB = 2 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ÎÎÎ

0.45

ÎÎÎÎ

1

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 20 Adc, IB = 4 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ÎÎÎ

2

ÎÎÎÎ

5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 20 Adc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

hFE

ÎÎÎÎ

4

2.5

ÎÎÎ

7

4.5

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 10 Adc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

8

6

ÎÎÎ

12

10

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 2 Adc, VCE = 1 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

12

14

ÎÎÎ

20

22

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 100 mAdc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

10

ÎÎÎ

20

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC SATURATION VOLTAGE

ÎÎÎÎÎÎÎÎ

Dynamic Saturation

Voltage:

Determined 3 ms after

rising IB1 reaches 90% of

final IB1 (see Figure 19)

ÎÎÎÎÎÎÎÎ

IC = 5 Adc, IB1 = 1 Adc

VCC = 300 V

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

VCE(dsat)

ÎÎÎÎ

ÎÎÎ

1.5

ÎÎÎÎ

ÎÎÎ

V

ÎÎÎÎÎÎ

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

2.8

ÎÎÎÎ

ÎÎÎ

V

ÎÎÎÎÎÎÎÎ

IC = 10 Adc, IB1 = 2 Adc

VCC = 300 V

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ÎÎÎ

2.4

ÎÎÎÎ

ÎÎÎ

V

ÎÎÎÎÎÎ

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

5

ÎÎÎÎ

ÎÎÎ

V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain Bandwidth

(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎ

fT

ÎÎÎÎ

ÎÎÎ

23

ÎÎÎÎ

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

150

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Input Capacitance

(VEB = 8 Vdc, f = 1 MHz)

ÎÎÎÎ

Cib

ÎÎÎÎ

ÎÎÎ

1300

ÎÎÎÎ

1750

ÎÎÎ

pF

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3

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 ms)

ÎÎÎÎÎÎÎÎ

Turn−on Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc, IB1 = 0.2 Adc

IB2 = 0.2 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ton

ÎÎÎÎ

ÎÎÎ

200

ÎÎÎÎ

300

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ts

ÎÎÎÎ

ÎÎÎ

5.3

ÎÎÎÎ

6.5

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

tf

ÎÎÎÎ

ÎÎÎ

240

ÎÎÎÎ

350

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Turn−off Time

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

toff

ÎÎÎÎ

ÎÎÎ

5.6

ÎÎÎÎ

7

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Turn−on Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc, IB1 = 0.4 Adc

IB2 = 0.4 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ton

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

200

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

ts

ÎÎÎÎ

ÎÎÎ

6.1

ÎÎÎÎ

7.5

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

tf

ÎÎÎÎ

ÎÎÎ

320

ÎÎÎÎ

500

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Turn−off Time

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

toff

ÎÎÎÎ

ÎÎÎ

6.5

ÎÎÎÎ

8

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Turn−on Time

ÎÎÎÎÎÎÎÎ

IC = 5 Adc, IB1 = 0.5 Adc

IB2 = 0.5 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ton

ÎÎÎÎ

ÎÎÎ

450

800

ÎÎÎÎ

650

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Turn−off Time

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

toff

ÎÎÎÎ

ÎÎÎ

2.5

3.9

ÎÎÎÎ

3

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Turn−on Time

ÎÎÎÎÎÎÎÎ

IC = 10 Adc, IB1 = 2 Adc

IB2 = 2 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ton

ÎÎÎÎ

ÎÎÎ

500

900

ÎÎÎÎ

700

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Turn−off Time

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

toff

ÎÎÎÎ

ÎÎÎ

2.25

2.75

ÎÎÎÎ

2.75

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc

IB1 = 0.2 Adc

IB2 = 0.2 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tfi

ÎÎÎÎ

ÎÎÎ

110

160

ÎÎÎÎ

250

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tsi

ÎÎÎÎ

ÎÎÎ

6.5

8

ÎÎÎÎ

8

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tc

ÎÎÎÎ

ÎÎÎ

235

240

ÎÎÎÎ

350

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc

IB1 = 0.4 Adc

IB2 = 0.4 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tfi

ÎÎÎÎ

ÎÎÎ

110

170

ÎÎÎÎ

250

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tsi

ÎÎÎÎ

ÎÎÎ

6

7.8

ÎÎÎÎ

7.5

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tc

ÎÎÎÎ

ÎÎÎ

250

270

ÎÎÎÎ

350

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 5 Adc

IB1 = 0.5 Adc

IB2 = 0.5 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tfi

ÎÎÎÎ

ÎÎÎ

110

140

ÎÎÎÎ

150

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tsi

ÎÎÎÎ

ÎÎÎ

3.25

4.6

ÎÎÎÎ

3.75

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tc

ÎÎÎÎ

ÎÎÎ

275

450

ÎÎÎÎ

350

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 10 Adc

IB1 = 2 Adc

IB2 = 2 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tfi

ÎÎÎÎ

ÎÎÎ

110

160

ÎÎÎÎ

175

ÎÎÎ

ns

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tsi

ÎÎÎÎ

ÎÎÎ

2.3

2.8

ÎÎÎÎ

2.75

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tc

ÎÎÎÎ

ÎÎÎ

250

475

ÎÎÎÎ

350

ÎÎÎ

ns

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4

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt

100

10

1

1010.10.001

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125°C

TJ = 25°C

TJ = -20°C

VCE = 1 V

Figure 2. DC Current Gain @ 3 Volt

100

10

1

1010.10.001

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125°C

TJ = 25°C

TJ = -20°C

VCE = 3 V

0.01 0.01

Figure 3. DC Current Gain @ 5 Volt

100

10

1

10010.10.01

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125°C

TJ = 25°C

TJ = -20°C

VCE = 5 V

10

Figure 4. Collector−Emitter Saturation Voltage

10

1

0.01

10010.10.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = -20°C

IC/IB = 5

VCE, VOLTAGE (VOLTS)

0.1

Figure 5. Collector−Emitter Saturation Voltage

10

1

0.01

1010.10.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

VCE, VOLTAGE (VOLTS)

0.1

0.01

Figure 6. Base−Emitter Saturation Region

1.5

1

0

10010.010.001

IC, COLLECTOR CURRENT (AMPS)

VBE , VOLTAGE (VOLTS)

TJ = 125°C

TJ = 25°C

TJ = -20°C

IC/IB = 5

0.5

0.1

0.01 10

IC/IB = 10

10

100 100

100

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5

TYPICAL STATIC CHARACTERISTICS

Figure 7. Base−Emitter Saturation Region

1.5

0.5

0

10010.10.001

IC, COLLECTOR CURRENT (AMPS)

VBE , VOLTAGE (VOLTS)

TJ = 125°C

TJ = 25°C

TJ = -20°C

1

0.01

IC/IB = 10

Figure 8. Collector Saturation Region

2

1

0

10010.10.01

IB, BASE CURRENT (A)

VCE(sat)

(IC = 1 A)

VCE, VOLTAGE (VOLTS)

TJ = 25°C

8 A

5 A

1.5

0.5

20 A

15 A

Figure 9. Capacitance

10000

10

100101

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

100

Cib (pF)

TJ = 25°C

f(test) = 1 MHz

1000

Figure 10. Resistive Breakdown

900

700

400

100010010

RBE (W)

BVCER (VOLTS)

TJ = 25°C

BVCER @ 10 mA

800

600

500

BVCER(sus) @ 200 mA

10 10

10 A

Cob (pF)

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6

t, TIME (s)μ

TYPICAL SWITCHING CHARACTERISTICS

Figure 11. Resistive Switching, ton

2000

1000

0

1530

IC, COLLECTOR CURRENT (AMPS)

6

t, TIME (ns)

1400

800

IB1 = IB2

VCC = 300 V

PW = 40 ms

Figure 12. Resistive Switch Time, toff

12

6

0

15100

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Storage Time, tsi

8

0

1551

IC, COLLECTOR CURRENT (AMPS)

6

3

8

4

2

7

TJ = 125°C

TJ = 25°C

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 mH

1800

IC/IB = 5

Figure 14. Inductive Storage Time,

tc & tfi @ IC/IB = 5

550

50

1571

IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

150

5

TJ = 125°C

TJ = 25°C

tc

tfi

350

912

IC/IB = 10

IC/IB = 5

125°C

25°C

5

TJ = 25°C

TJ = 125°C

IB1 = IB2

VCC = 300 V

PW = 20 ms

IC/IB = 10

IC/IB = 5

t, TIME (s)μ

Figure 13 Bis. Inductive Storage Time, tsi

8

0

1041

IC, COLLECTOR CURRENT (AMPS)

7

4

7

TJ = 125°C

TJ = 25°C

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 mH

t, TIME (s)μ

6

5

3

IC/IB = 10

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 mH

Figure 15. Inductive Storage Time,

tc & tfi @ IC/IB = 10

800

0

1080

IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

200

4

TC = 125°C

TC = 25°C

tc

tfi

400

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 mH

600

1600

1200

600

400

200

10

7

4

5

1

2

391113

2

1

450

250

391113

700

500

300

100

26

125°C

25°C

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TYPICAL SWITCHING CHARACTERISTICS

5

0

1042

hFE, FORCED GAIN

8

4

6

TJ = 125°C

TJ = 25°C

Figure 16. Inductive Storage Time

3

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 mH

Figure 17. Inductive Fall Time

200

0

103

hFE, FORCED GAIN

150

tfi, FALL TIME (ns)

100

50

467

TJ = 125°C

TJ = 25°C

, STORAGE TIME (tsi μs)

IC = 5 A

IC = 10 A

589

IBoff = IB2

VCC = 15 V

VZ = 300 V

LC = 200 mH

Figure 18. Inductive Crossover Time

800

300

100

hFE, FORCED GAIN

600

tc, CROSSOVER TIME (ns)

700

400

500

200

1034 6 7589

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 mH

TJ = 125°C

TJ = 25°C

1

IC = 5 A

2

IC = 10 A

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TYPICAL SWITCHING CHARACTERISTICS

Table 1. Inductive Load Switching Drive Circuit

V(BR)CEO(sus)

L = 10 mH

RB2 = ∞

VCC = 20 Volts

IC(pk) = 100 mA

Inductive Switching

L = 200 mH

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

RBSOA

L = 500 mH

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

Figure 19. Dynamic Saturation Voltage

Measurements

TIME

VCE

0 V

IB

90% IB

1 ms

dyn 1 ms

dyn 3 ms

Figure 20. Inductive Switching Measurements

10

4

0

820

TIME

6

8

6

2

4

9

7

5

3

1

13 57

IB

IC

Vclamp

tsi

tc

tfi

90% IC

10% IC

90% IB1

10% Vclamp

+15 V

1 mF150 W

3 W

100 W

3 W

MPF930

+10 V

50

W

COMMON

-Voff

500 mF

MPF930

MTP8P10

MUR105

MJE210

MTP12N10

MTP8P10

150 W

3 W

100 mF

Iout

A

RB1

RB2

1 mF

IC PEAK

VCE PEAK

VCE

IB

IB1

IB2

3 ms

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9

TYPICAL THERMAL RESPONSE

Figure 21. Forward Bias Power Derating

1

0

16010020

TC, CASE TEMPERATURE (°C)

0.8

POWER DERATING FACTOR

0.6

0.4

0.2

60 140

SECOND BREAKDOWN

DERATING

40 80 120

THERMAL DERATING

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC−VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate. The data of Figure 22 is

based on TC = 25°C; TJ(pk) is variable depending on power

level. Second breakdown pulse limits are valid for duty cycles

to 10% but must be derated when TC > 25°C. Second

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on

Figure 22 may be found at any case temperature by using the

appropriate curve on Figure 21.

TJ(pk) may be calculated from the data in Figure 24. At any

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed

by second breakdown. For inductive loads, high voltage and

current must be sustained simultaneously during turn−off

with the base to emitter junction reverse biased. The safe level

is specified as a reverse biased safe operating area

(Figure 23). This rating is verified under clamped conditions

so that the device is never subjected to an avalanche mode.

Figure 22. Forward Bias Safe Operating Area

100

0.01

10001

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 23. Reverse Bias Safe Operating Area

16

6

0

800300

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

100

1

0.1

IC, COLLECTOR CURRENT (AMPS)

DC

5 ms

1 ms

10 ms

1 ms

8

2

GAIN ≥ 5

0 V -1.5 V

-5 V

TC ≤ 125°C

LC = 4 mH

10

400 500 700600

12

4

14

10

EXTENDED SOA

Figure 24. Typical Thermal Response (ZqJC(t)) for BUH150

1

0.01

100.10.01

t, TIME (ms)

0.1

1 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

RqJC(t) = r(t) RqJC

RqJC = 0.83°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.05

SINGLE PULSE

0.5

0.2

0.1

0.02

BUH150G

http://onsemi.com

10

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

123

4

D

SEATING

PLANE

−T−

C

S

T

U

R

J

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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