TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS Designed for Complementary Use with TIP125, TIP126 and TIP127 TO-220 PACKAGE (TOP VIEW) 65 W at 25C Case Temperature 5 A Continuous Collector Current B 1 Minimum hFE of 1000 at 3 V, 3 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL TIP120 Collector-base voltage (IE = 0) TIP121 V CBO 80 V 100 TIP120 TIP121 UNIT 60 TIP122 Collector-emitter voltage (IB = 0) VALUE 60 VCEO TIP122 80 V 100 VEBO 5 V IC 5 A ICM 8 A IB 0.1 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 65 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 2 W 1/2LIC2 50 mJ C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. Tj -65 to +150 Tstg -65 to +150 C TL 260 C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.52 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperatur e PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE VEC Collector-emitter breakdown voltage TEST CONDITIONS MIN TIP120 IC = 30 mA IB = 0 (see Note 5) TYP MAX TIP121 80 TIP122 100 V VCE = 30 V IB = 0 TIP120 0.5 VCE = 40 V IB = 0 TIP121 0.5 VCE = 50 V IB = 0 TIP122 0.5 VCB = 60 V IE = 0 TIP120 0.2 VCB = 80 V IE = 0 TIP121 0.2 VCB = 100 V IE = 0 TIP122 0.2 VEB = 5V IC = 0 Forward current VCE = 3V IC = 0.5 A transfer ratio VCE = 3V IC = 3A Collector-emitter IB = 12 mA IC = 3A saturation voltage IB = 20 mA IC = 5A VCE = 3V IC = 3A IE = 5A IB = 0 Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Base-emitter voltage Parallel diode forward voltage UNIT 60 mA mA 2 mA 1000 (see Notes 5 and 6) 1000 2 (see Notes 5 and 6) V 4 (see Notes 5 and 6) 2.5 V (see Notes 5 and 6) 3.5 V MAX UNIT NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN TYP RJC Junction to case thermal resistance 1.92 C/W RJA Junction to free air thermal resistance 62.5 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN TYP ton Turn-on time IC = 3 A IB(on) = 12 mA IB(off) = -12 mA 1.5 s toff Turn-off time VBE(off) = -5 V RL = 10 tp = 20 s, dc 2% 8.5 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS120AA 40000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 10000 1000 VCE = 3 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 5*0 TCS120AB 2*0 tp = 300 s, duty cycle < 2% IB = I C / 100 1*5 1*0 0*5 TC = -40C TC = 25C TC = 100C 0 0*5 IC - Collector Current - A 1*0 5*0 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS120AC VBE(sat) - Base-Emitter Saturation Voltage - V 3*0 2*5 TC = -40C TC = 25C TC = 100C 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 5*0 IC - Collector Current - A Figure 3. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS120AA IC - Collector Current - A DC Operation tp = 300 s, d = 0.1 = 10% 10 1*0 TIP120 TIP121 TIP122 0*1 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS120AA Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.