NJW4186
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Ver.2014-02-07
ELECTRICAL CHARACTERISTICS
Unless otherwise noted,
VO≥3V: VIN=VO+1V, CIN=1.0µF, CO=2.2µF, R1=500kΩ, Ta=25°C
V
O<3V: VIN=4.0 V, CIN=1.0µF, CO=4.7µF, R1=500kΩ, Ta=25°C
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reference V o ltage Vref -1.0% 1.29 +1.0% V
Quiescent Current IQ I
O = 0mA, except ICONT - 55 90 µA
Quiescent Current
at Control OFF IQ (OFF) V
CONT = 0V - - 1 µA
Output Current IO VO × 0.9 500 - - mA
Line Regulation ∆VO/∆VIN VIN = VO+1V ~ 40 V , IO=30mA(VO≥3V)
VIN = 4V ~ 40V, IO=30mA(VO<3V) - - 0.015 %/V
Load Regulation ∆VO/∆IO IO = 0mA ~ 500mA - - 0.006 %/mA
Ripple Rejection RR ein = 200mV rms,f =1kHz, IO=30mA,
VO = 3.3V - 60 - dB
Dropout V oltage ∆VI O IO = 300mA - 0.27 0.42 V
Average Temperature
Coefficient o f Output
V oltage ∆VO/∆Ta Ta = 0 ~ 85°C, IO=30mA - ±50 - ppm/°C
Control Current ICONT V
CONT = 1.6V - 1 3 µA
Control V olt age
for ON-state VCONT(ON) 1.6 - - V
Control V olt age
for OFF-state VCONT(OFF) - - 0.6 V
Available Output
V oltage Rang e VO 2.0 - 16 V
* The se parameters are tested by Pulse Measurement.
POWER DISSIPATION vs. AMBI ENT TEMPERATURE
NJW4186DL3 PowerDissipation
(Topr=-40°C ~+85°C,Tj=150° C)
0
500
1000
1500
2000
2500
3000
3500
-50 -25 0 25 50 75 100 125 150
Temperatur e : Ta(°C)
Power Dissipation PD(mW)
on 4 layers board
on 2 layers board