IRFP350,351 D88FQ2,Q1 LOWER IWOS [FET 15 AMPERES 400, 350 VOLTS _ RDS(ON) = 0.3 0 FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear N-CHANNEL Ao @ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) applications such as audio amplifiers and servo motors. 087 (1.45) -9 fp ae) psi s62)o] 1281828) Features ] x ols Polysili d stability and reliabilit | PY? olysilicon gate Improved stability and reliability 2, e No secondary breakdown Excellent ruggedness | e Ultra-fast switching Independent of temperature 7 as [I Voltage controlled High transconductance cot | (15.93) e Low input capacitance Reduced drive requirement | e Excellent thermal stability Ease of paralleling 5100279) A 55 allt | FF 200250 018 (0.46) > po 048 vs lk 1 re (5: UNIT TYPE TERM.1 TERN.2 | TERMS | TAB POWER MOS FET | T0247 GATE DRAIN | SOURCE] DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRFP350/D88FQ2 | IRFP351/D88FQ1 UNIT Drain-Source Voitage Voss 400 350 Volts Drain-Gate Voltage, Ras = 1MQ VpGR 400. 350 Volts Continuous Drain Current @ Tg = 25C Ip 15 15 A @ Tc = 100C 9 9 A Pulsed Drain Current lpm 60 60 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 150 150 Watts Derate Above 25C 1.2 1.2 W/C Operating and Storage Junction Temperature Range Ty, Tstg -55 to 150 -55 to 150 C thermal characteristics Therma! Resistance, Junction to Case Rec 0.83 0.83 C/W Thermal Resistance, Junction to Ambient RaJA 40 40 C/W Maximum Lead Temperature for Soidering Purposes: %" from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 309electrical characteristics (To = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRFP351/D88FQ1 BVpss 350 _ _ Volts (Vas = OV, Ip = 250 uA) IRFP350/D88FQ2 400 - Zero Gate Voltage Drain Current loss (Vps = Max Rating, Vgg = OV, To = 25C) _ _ 250 LA (Vps = Max Rating, * 0.8, Vag = OV, Tc = 125C) 1000 Gate-Source Leakage Current (Vas = 20V) lass - _ +500 nA on characteristics Gate Threshold Voltage To = 25C | Vas(tn) 2.0 _ 4.0 Volts (Vos = V@s, |p = 250 vA) On-State Drain Current | 15 _ _ A (Vag = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 8A) RpS(ON) _ 0.26 0.30 Ohms Forward Transconductance (Vps = 10V, Ip = 8A) Ofs 5.6 8.0 _ mhos dynamic characteristics Input Capacitance Vas = 0V Ciss _ 2800 3000 pF Output Capacitance Vos = 25V Coss _ 300 600 pF Reverse Transfer Capacitance f= 1 MHz Crss - 60 200 pF switching characteristics Turn-on Delay Time Vps = 175V ta(on) _ 20 _ ns Rise Time Ip = 8A, Vag = 15V tr _ 25 _- ns Turn-off Delay Time RGen = 500, Reg = 12.50 | taroft) _ 110 _ ns Fall Time (Ras (EQuiv,) = 100) tt _ 70 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ 15 A Pulsed Source Current Ismw _- _ 60 A Diode Forward Voltage _ (To = 25C, Vgs = OV, Is = 40A) Vsp 1.0 1.6 Volts Reverse Recovery Time ter _ 500 ns (Ig = 15A, dig/dt = 100A/us, To = 125C) Qrr 6.5 uC Pulse Test: Pulse width < 300 us, duty cycle = 2% 100 80 60 CONDITIONS: 40 Rps(On) CONDITIONS: Ip = 8.0 A, Vgg = 10V V@s(tH) CONDITIONS: Ip = 25024, Vg = Vag < = 2 2 DSiON) w N i 3 Ww o40 4 z 2 Z = 6 e * = 5 2 8 3 > z Qo < 10 z & 0.8 OPERATION IN THIS AREA > 0:'8) MAY BE LIMITED BY R g ~ 0.4 oe 0.2L. SINGLE PULSE IRFP351/D88FQ1 Ty= 25C IRFP350/D88FQ2 0.1 1 2 4 6 810 20 40 6080100 200 400 600 1000 0 Vos, DRAIN-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 40 Qo 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogion; AND Vagiru VS- TEMP. 310