www.element14.com
www.farnell.com
www.newark.com
Page <1> V1.012/09/14
PNP General Purpose Transistor
Features:
• Epitaxial planar die construction
• Complementary NPN type available
(MMBT3904)
• Low Current (Max: -100mA)
• Low Voltage (Max: -40v)
Applications:
• Idealformediumpoweramplicationand
switching
Parameter Symbol Conditions Min. Max. Units
Collector-Base Voltage VCBO Open Emitter - -40
VCollector-Emitter Voltage VCEO Open Base - -40
Emitter-Base Voltage VEBO Open Collector - -6
Collector Current (DC) IC- -100
mAPeak Collector Current ICM - -200
Peak Base Current IBM - -100
Total Power Dissipation Ptot Tamb≤25°C -250 m
Storage Temperature Tstg -65 +150
°CJunction Temperature Tj-150
Operating Ambient Temperature Tamb -65 +150
Maximum Rating @ Ta = 25°C unless otherwise specied
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Note: Transistor mounted on an FR4 printed-circuit board.
Parameter Symbol Conditions Min. Max. Unit
Collector Cut-Off Current ICBO IE = 0; VCB = -30V --50
nA
Emitter Cut-Off Current IEBO IC = 0; VEB = 6V --50
www.element14.com
www.farnell.com
www.newark.com
Page <2> V1.012/09/14
PNP General Purpose Transistor
Parameter Symbol Conditions Min. Max. Unit
DC Current Gain hFE
VCE = -1V;
IC= -0.1mA
IC = -1mA
IC = -10mA
IC =-50mA
IC = -100mA
60
80
100
60
30
-
-
300
-
-
Collector-Emitter Saturation Voltage VCEsat
IC = -10mA; IB = 1mA - -200
mV
IC =-50mA;IB =-5mA - -300
Base-Emitter Saturation Voltage VBEsat
IC = -10mA; IB = -1mA --850
IC =-50mA;IB =-5mA --950
Collector Capacitance Cc
IE = Ie= 0; VCB =-5V;
f = 1MHz
-4.5 pF
Emitter Capacitance Ce
IC = Ic= 0; VEB =-500mV;
f = 1MHz
- 10
Transition Frequency fT
IC = -10mA; VCE = -20V;
f = 100MHz
250 - MHz
Noise Figure NF IC = -100μA; VCE =-5V;
RS =1kΩ;f=10Hzto15.7kHz - 4 dB
Switching Times (between 10% and 90% levels)
Turn-On Time ton
ICon = -10mA; IBon = -1mA;
IBoff = -1mA
-65
ns
Delay Time td-35
Rise Time tr-35
Turn-Off Time toff - 300
Storage Time ts-225
Fall Time tr-75
Note:Pulsetest:tp≤300ms;d≤0.02.
www.element14.com
www.farnell.com
www.newark.com
Page <3> V1.012/09/14
PNP General Purpose Transistor
Typical Characteristics @ Ta = 25°C unless otherwise specied
www.element14.com
www.farnell.com
www.newark.com
Page <4> V1.012/09/14
PNP General Purpose Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, Bipolar, PNP, -40V, -100mA,
SOT-23 MMBT3906-7-F
Soldering Footprint:
SOT-23
Dim Min Max
A2.85 2.95
B1.25 1.35
C1 Typical
D0.37 0.43
E0.35 0.48
G1.85 1.95
H 0.02 0.1
J0.1 Typical
K2.35 2.45
All Dimensions in mm
Plastic Surface Mounted Package:
Unit : mm
