IXTM11N80 - IXYS Corporation

IXYS Corporation

3540 Bassett Street, Santa Clara,CA 95054

Tel: 408-982-0700 Fax: 408-496-0670

IXYS Semiconductor

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030 Fax: +49-6206-503629

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150 °C 800 V

VDGR TJ= 25°C to 150°C; RGS = 1 MΩ800 V

VGS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C 11N80 11 A

13N80 13 A

IDM TC= 25°C, pulse width limited by TJM 11N80 44 A

13N80 52 A

PDTC= 25°C 300 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

MdMounting torque 1.13/10 Nm/lb.in.

Weight TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

MegaMOSTMFET

N-Channel Enhancement Mode

VDSS ID25 RDS(on)

IXTH / IXTM 11N80 800 V 11 A 0.95 Ω Ω

Ω Ω

Ω

IXTH / IXTM 13N80 800 V 13 A 0.80 ΩΩ

ΩΩ

Ω

G = Gate, D = Drain,

S = Source, TAB = Drain

TO-204 AA (IXTM)

TO-247 AD (IXTH)

915380F (5/96)

D (TAB)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VDSS VGS = 0 V, ID = 3 mA 800 V

VGS(th) VDS = VGS, ID = 250 µA 2 4.5 V

IGSS VGS = ±20 VDC, VDS = 0 ±100 nA

IDSS VDS = 0.8 • VDSS TJ = 25°C 250 µA

VGS = 0 V TJ = 125°C1mA

DS(on) VGS = 10 V, ID = 0.5 ID25 11N80 0.95 Ω

Pulse test, t ≤ 300 µs, 13N80 0.80 Ω

Features

●International standard packages

●Low RDS (on) HDMOSTM process

●Rugged polysilicon gate cell structure

●Low package inductance (< 5 nH)

- easy to drive and to protect

●Fast switching times

Applications

●Switch-mode and resonant-mode

power supplies

●Motor controls

●Uninterruptible Power Supplies (UPS)

●DC choppers

Advantages

●Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

●Space savings

●High power density

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

IXTH 11N80 IXTH 13N80

IXTM 11N80 IXTM 13N80

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 8 14 S

Ciss 4500 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 310 pF

Crss 65 pF

td(on) 20 50 ns

trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 33 50 ns

td(off) RG = 2 Ω, (External) 63 100 ns

tf32 50 ns

Qg(on) 145 170 nC

Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 30 45 nC

Qgd 55 80 nC

RthJC 0.42 K/W

RthCK 0.25 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

ISVGS = 0 V 11N80 11 A

13N80 13 A

ISM Repetitive; 11N80 44 A

pulse width limited by TJM 13N80 52 A

VSD IF = IS, VGS = 0 V, 1 . 5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 800 ns

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-247 AD (IXTH) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 6.4 11.4 .250 .450

A1 3.42 .135

∅b .97 1.09 .038 .043

∅D 22.22 .875

e 10.67 11.17 .420 .440

e1 5.21 5.71 .205 .225

L 7.93 .312

∅p 3.84 4.19 .151 .165

∅p1 3.84 4.19 .151 .165

q 30.15 BSC 1.187 BSC

R 13.33 .525

R1 4.77 .188

s 16.64 17.14 .655 .675

TO-204AA (IXTM) Outline

Pins 1 - Gate 2 - Source

Case - Drain

1 2 3

IXYS Corporation

3540 Bassett Street, Santa Clara,CA 95054

Tel: 408-982-0700 Fax: 408-496-0670

IXYS Semiconductor

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030 Fax: +49-6206-503629

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 11N80 IXTH 13N80

IXTM 11N80 IXTM 13N80

TJ - Degrees C

-50 -25 0 25 50 75 100 125 150

BV/VG(th) - Normalized

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2 VGS(th)

TC - Degrees C

-50 -25 0 25 50 75 100 125 150

ID - Amperes

TJ - Degrees C

-50 -25 0 25 50 75 100 125 150

RDS(on) - Normalized

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

ID - Amperes

02468101214161820222426

DS(on) - Ohms

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

VGS = 10V

TJ = 25°C

VGS - Volts

012345678910

- Amperes

18 TJ = 25°C

VDS = 10V

VDS - Volts

024681012

- Amperes

Fig. 1 Output Characteristics Fig. 2 Input Admittance

Fig. 3 R DS(on) vs. Drain Current Fig. 4 Temperature Dependence

of Drain to Source Resistance

Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of

Case Temperature Breakdown and Threshold Voltage

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

IXTH 11N80 IXTH 13N80

IXTM 11N80 IXTM 13N80

VDS - Volts

1 10 100 1000

ID - Amperes

0.1

VSD - Volts

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID - Amperes

VCE - Volts

0 5 10 15 20 25

Capacitance - pF

500

1000

1500

2000

2500

3000

3500

4000

4500

Pulse Width - Seconds

0.00001 0.0001 0.001 0.01 0.1 1 10

Thermal Response - K/W

0.001

0.01

0.1

D=0.5

Crss

Coss

100ms

10ms

1ms

100µs

10µs

Limited by RDS(on)

Ciss

Single Pulse

Gate Charge - nCoulombs

0 25 50 75 100 125 150

VGE - Volts

VDS = 400V

ID = 13A

IG = 10mA

TJ = 125°C TJ = 25°C

D=0.2

D=0.1

D=0.05

D=0.02

D=0.01

f = 1 MHz

VDS = 25V

Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area

Fig.11 Transient Thermal Impedance

Fig.9 Capacitance Curves Fig.10Source Current vs. Source

to Drain Voltage