VS-10TQ035SPbF, VS-10TQ045SPbF
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Revision: 21-May-14 1Document Number: 94121
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 10 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10TQ...SPbF Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
Package D2PAK
IF(AV) 10 A
VR35 V, 40 V, 45 V
VF at IF0.57 V
IRM 15 mA at 125 °C
TJ max. 175 °C
Diode variation Single die
EAS 13 mJ
Anode
13
Base
cathode
2
N/C
D2PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 10 A
VRRM 35/45 V
IFSM tp = 5 μs sine 1050 A
VF10 Apk, TJ = 125 °C 0.49 V
TJRange -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10TQ035SPbF VS-10TQ045SPbF UNITS
Maximum DC reverse voltage VR35 45 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 151 °C, rectangular waveform 10 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
1050
A
10 ms sine or 6 ms rect. pulse 280
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 6.5 mH 13 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2A
VS-10TQ035SPbF, VS-10TQ045SPbF
www.vishay.com Vishay Semiconductors
Revision: 21-May-14 2Document Number: 94121
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
10 A TJ = 25 °C 0.57
V
20 A 0.67
10 A TJ = 125 °C 0.49
20 A 0.61
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
2mA
TJ = 125 °C 15
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 900 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -55 to +175 °C
Maximum thermal resistance,
junction to case RthJC
DC operation
See fig. 4 2.0
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D2PAK 10TQ045S
VS-10TQ035SPbF, VS-10TQ045SPbF
www.vishay.com Vishay Semiconductors
Revision: 21-May-14 3Document Number: 94121
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
100
10
0.1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0 0.2 0.6 1.0 1.4 1.8
TJ = 25 °C
TJ = 175 °C
TJ = 125 °C
0.4 0.8 1.2 1.6
1
1000
VR - Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.0001
0.001
0.01
0.1
1
05 15 25 35 40 45
10
1000
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10 20 30
100
1000
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
0
100
20 40 5010 30
TJ = 25 °C
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
VS-10TQ035SPbF, VS-10TQ045SPbF
www.vishay.com Vishay Semiconductors
Revision: 21-May-14 4Document Number: 94121
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
IF(AV) - Average Forward Current (A)
Allowable Case Temperature (°C)
155
160
165
170
175
180
051015
10TQ
RthJC (DC) = 2.0 °C/W
DC
IF(AV) - Average Forward Current (A)
Average Power Loss (W)
051015
0
1
2
4
3
8
DC
RMS limit
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
5
6
7
t
p
- Square Wave Pulse Duration (µs)
I
FSM
- Non-Repetitive Surge Current (A)
10 100 1000 10 000
100
1000
At any rated load condition and
with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-10TQ035SPbF, VS-10TQ045SPbF
www.vishay.com Vishay Semiconductors
Revision: 21-May-14 5Document Number: 94121
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95014
Part marking information www.vishay.com/doc?95008
Packaging information www.vishay.com/doc?95032
035 = 35 V
045 = 45 V
2- Current rating (10 A)
3- Circuit configuration: T = D2PAK
4- Schottky “Q” series
5- Voltage ratings
- S = D2PAK
6
7- None = tube (50 pieces)
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
- PbF = lead (Pb)-free
8
1- Vishay Semiconductors product
Device code
51 32 4 6 7 8
VS- 10 T Q 045 S TRL PbF
Document Number: 95014 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
D2PAK, TO-262
Outline Dimensions
Vishay Semiconductors
DIMENSIONS - D2PAK in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 95014
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 31-Mar-09
Outline Dimensions
Vishay Semiconductors D2PAK, TO-262
DIMENSIONS - TO-262 in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190
A1 2.03 3.02 0.080 0.119
b 0.51 0.99 0.020 0.039
b1 0.51 0.89 0.020 0.035 4
b2 1.14 1.78 0.045 0.070
b3 1.14 1.73 0.045 0.068 4
c 0.38 0.74 0.015 0.029
c1 0.38 0.58 0.015 0.023 4
c2 1.14 1.65 0.045 0.065
D 8.51 9.65 0.335 0.380 2
D1 6.86 8.00 0.270 0.315 3
E 9.65 10.67 0.380 0.420 2, 3
E1 7.90 8.80 0.311 0.346 3
e 2.54 BSC 0.100 BSC
L 13.46 14.10 0.530 0.555
L1 - 1.65 - 0.065 3
L2 3.56 3.71 0.140 0.146
(4)
(4) Base
metal
Plating b1, b3
(b, b2)
c1
c
Section B - B and C - C
Scale: None
Section A - A
(3)
E1
(3)D1
E
B
A
A
A
c2
c
A1
Seating
plane
Lead tip
(3)
(2) (3)
(2)
A
E
(Datum A)
L1
L2
BB
CC
3
2
1
L
D
2 x e
3 x b2
3 x b
0.010 A B
MM
Modified JEDEC outline TO-262
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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