Preliminary Data Sheet
August 2004
AGR09030GUM
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09030GUM is a high-voltage, gold-metal-
ized, laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for cellular
band, code-division multiple access (CDMA), global
system for mobile communication (GSM), enhanced
data for global evolution (EDGE), and time-division
multiple access (TDMA) single and multicarrier class
AB wireless base station amplifier applications. This
device is manufactured on an advanced LDMOS
technology, offering state-of-the-art performance and
reliability. Available in a plastic overmold package
capable of delivering a minimum output power of
30 W, it is ideally suited for today's RF power ampli-
fier applications.
Figure 1. AGR09030GUM Package
Features
■Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, and traffic codes 8—13:
— Output powe r (POUT): 7 W.
— Power gain: 19.5 dB.
— Efficiency: 29%.
— Adjacent ch annel power ratio (ACPR) for
30 kHz bandwidth (BW):
❏750 kHz offset: –47 dBc.
❏1.98 MHz offset: –62 dBc.
— Input return loss: –15 dB.
■High-reliability, gold-metalization process.
■High gain, efficiency, and linearity.
■Integrated ESD protection.
■Si LDMOS.
■Industry-standard packages.
■40 W typical output power.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* St ress es in excess of the absolute maxim um ratings ca n cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Tab le 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22- A114B (HBM), JES D22-A115A (MM), and
JESD22-C101A (CDM ) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
Parameter Sym Value Unit
Therma l Resistance,
Junction to Case RθJC 2.0 °C/W
Parameter Sym Value Unit
Drain-source V oltage VDSS 65 Vdc
Gate-source V oltage VGS –0.5, +15 Vdc
To tal Di ssipa tion at
TC = 25 °C PD87.5 W
Derate Above 25 °C—0.5W/°C
Operating Junction
Temperature TJ200 °C
S torage Temperature
Range TSTG –65, +150 °C
AGR09030GUM Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1500 4
2Agere Systems Inc.
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET August 2004
AGR09030GUM Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
Parameter Symbol Min Typ Max Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID=100µA) V(BR)DSS 65 — — Vdc
Gate-source Leakage Current (VGS =5V, VDS =0V) IGSS ——1.3µAdc
Zero Gate Voltage Drain Leakage Current (VDS =28V, VGS =0V) IDSS ——4µAdc
On Characteristics
Forward Transconductance (VDS =10V, ID=1.0A) GFS —3— S
Gate Threshold Voltage (VDS =10V, ID = 450 µA) VGS(TH) ——4.2Vdc
Gate Quiescent Voltage (VDS =28V, IDQ = 330 mA) VGS(Q) —3.5—Vdc
Drain-source On-voltage (VGS =10V, ID = 1.0 A) VDS(ON) —0.25— Vdc
Parameter Symbol Min Typ Max Unit
Dynamic Characteris tics
Input Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz) CISS —56— pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz) COSS — 15.7 — pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz) CRSS —0.73— pF
Functional Tests (in Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain
(VDS = 28 V, POUT = 7 W, IDQ = 330 mA) GL18 19.5 — dB
Output Power
(VDS = 28 V, 1 dB compression, IDQ = 330 mA) P1dB 30 40 — W
Drain Efficiency
(VDS = 28 V, POUT = P1dB, IDQ = 330 mA) η—60— %
Third-order Intermodulation Distortion
(100 kHz spacing, VDS = 28 V, POUT = 30 WPEP, IDQ = 330 mA,
typical efficiency = 42%)
IMD — –35 — dBc
Input Return Loss RL — –15 — dB
Ruggedness
(VDS = 28 V, POUT = 30 W, IDQ = 330 mA, f = 880 MHz,
VSWR = 10:1, all angles)
— No degradation in output power.
Agere Systems Inc. 3
Preliminary Data Sheet AGR09030GUM
August 2004 30 W, 865 MHz—895 MHz, N-Chann el E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09030GUM
A. Schematic
B. Component Layout
Figure 2. AGR09030GUM Test Circuit
Parts List:
■Murata® chip capacitor:
C12, C23: 0.01 µF
GRM40X7R103K100AL.
■0603 chip capacitor:
C10, C22: 220 pF.
■Sprague® tantalum
chip capacitor:
C14, C15, C25:
22 µF, 35 V.
■Kreger®
ferrite bead:
FB1 2743D19447.
■Kemet® chip capacitor:
C13, C24 0.10 µF
C1206C104KRAC7800.
■Vitramon® chip
capacitor:
C11, C22: 2200 pF,
VJ1206Y222KXA.
■Taconic® ORCER RF-
35: board material, 1 oz.
copper , 30 mil thickness,
εr = 3.5.
■Microstrip line: Z1 0.334 in. x 0.066 in.; Z2 0.042 in. x 0.066 in.; Z3 0.344 in. x 0.050 in.; Z4 0.045 in. x 0.066 in.; Z5 0.074 in. x 0.066 in.;
Z6 0.920 in. x 0.066 in.; Z7 0.050 in. x 0.066 in.; Z8 0.226 in. x 0.066 in.; Z9 0.785 in. x 0.150 in.; Z10 0.050 in. x 0.600 in.;
Z11 0.499 in. x 0.600 in.; Z12 0.050 in. x 0.600 in.; Z13 1.024 in. x 0.050 in.; Z14 0.180 in. x 0.500 in.; Z15 0.050 in. x 0.500 i n . ;
Z16 0.534 in. x 0.500 in.; Z17 0.050 in. x 0.500 in.; Z18 0.675 in. x 0.100 in.; Z19 0.050 x 0.066; Z20 0.507 in. x 0.066 in.;
Z21 0.891 in. x 0.066 in.; Z22 2.048 in. x 0.050 in.
■ATC® chip capacitor: C1: 8.2 pF 100A8R2JW; C2: 47 pF 100A470JW; C3, C8, C18, C19: 47 pF 100B470JW; C4: 3.0 pF 100B3R0BW;
C5: 3.9 pF 100A3R9JW; C6, C7: 12 pF 100B120JW; C9, C20: 10 pF 100B100JW; C16: 9.1 pF 100B9R1JW; C17: 4.7 pF 100B4R7JW.
■1206 size, 0.25 W, fixed film, chip resistors: R1: 51 Ω, RM73B2B510J; R2: 47 kΩ, RM73 B2B473J; R3: 1 kΩ, RM73B2B102J.
■0805 size, 0.25 W, fixed film, chip resistor: R4: 10 Ω, RK73H2A10R0F.
Z9 Z10
DUT
C14
R1
C13 C12
FB1
Z14
C22C21C20C19 C25C24
+
C23
R
F INPUT
V
GG
V
D
D
C11 C10 C9 C8
C4
Z12
C6 C7
Z21C18Z20Z19
Z16Z17
RF OUTPUT
C16
Z18
1
2
3PINS:
1. DRAIN
2. GATE
3. SOURCE
Z13
C15 R2
R3
++
C3 Z6 Z7
C2
Z4 Z5
R4
C1 Z3
Z1 Z2
Z11
Z15
Z22
C5
Z8
C17
4Agere Systems Inc.
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET August 2004
AGR09030GUM Preliminary Data Sheet
Typical Performance Characteristics
Figure 3. Series Equivalent Input and Output Imped ances
MHz (f) ZS Ω
(Complex Source Impedance)
ZL Ω
(Complex Optimum Load Impedance)
865 (f1) 0.720 – j0.820 3.59 – j0.289
880 (f2) 0.814 – j0.888 3.49 – j0.672
895 (f3) 0.800 – j0.872 3.53 – j0.466
0.1
0.1
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0.2
0.2
0.3
0.3
0.4
0.4
0.5
0.5
0.6
0.6
0.7
0.7
0.8
0.8
0.9
0.9
1.0 1.0
1.2
1.2
1.4
1.4
1.6
1.6
1.8
1.8
2.0
2.0
3.0
3.0
4.0
4.0
5.0
5.0
10
10
10
20
20
20
50
50
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0.2
0.2
0.2
0.4
0.4
0.4
0.6
0.6
0.6
0.8
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.8
0.8
1.0
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.22
0.23
0.23
0.24
0.24
0.25
0.25
0.26
0.26
0.27
0.27
0.28
0.29
0.3
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.48
0.49
0.49
0.0
0.0
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RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZSf3
f1 ZL
f1
f3
Z0 = 9 Ω
DUT
ZSZL
INPUT MATCH OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
Agere Systems Inc. 5
Preliminary Data Sheet AGR09030GUM
August 2004 30 W, 865 MHz—895 MHz, N-Chann el E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, IDQ = 330 mA, TC = 30 °C.
IS-95 CDMA pilot, paging, sync, traff ic codes 8 through 13. Offset 1 = 750 kHz, 30 kHz BW, offset 2 = 1.98 MHz, 30 kHz BW.
Figure 4. ACPR vs. POUT
Test Conditions:
VDD = 28 Vdc, IDQ = 330 mA, TC = 30 °C. Waveform = CW.
Figure 5. Power Gain and Return Loss vs. Frequency
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
POUT (W)Z
ACPR (dBc)Z
ACP+
ACP-
ACP1+
ACP-
FREQUENCY = 880 MHz
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
860 865 870 875 880 885 890 895 900
FREQUENCY (MHz)Z
POWER GAIN (dB)Z
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
INPUT RE T URN LOS S (dB)Z
POWER GAIN
RETURN LOSS
POUT = 7 W
POUT = 40 W
6Agere Systems Inc.
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET August 2004
AGR09030GUM Preliminary Data Sheet
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, IDQ = 330 mA, TC = 30 °C. Waveform = CW.
Figure 6. Power Gain vs. Power Out
Test Conditions:
VDD = 28 Vdc, IDQ = 330 mA, TC = 30 °C. Waveform = CW.
Figure 7. Power Out and Drain Efficiency vs. Input Power
14
15
16
17
18
19
20
510 15 20 25 30 35 40 45 50 5
5
POUT (W)Z
POWER GAIN (dB)Z
865 MHz
880 MHz
895 MHz
0
5
10
15
20
25
30
35
40
45
50
55
60
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
PIN (W)
Z
POUT (W)Z
20
30
40
50
60
70
80
90
100
110
120
130
140
DRAIN EFFICIE NCY (%)Z
865 MHz
880 MHz
895 MHz
POUT
895 MHz
880 MHz
865 MHz
Ƨ
Agere Systems Inc. 7
Preliminary Data Sheet AGR09030GUM
August 2004 30 W, 865 MHz—895 MHz, N-Chann el E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, frequency = 880 MHz, TC = 30 °C. Waveform = CW.
Figure 8. Power Gain vs. Power Out
Test Conditions:
VDD = 28 Vdc, IDQ = 330 mA, F1 = 880 MHz, F2 = 880.1 MHz, TC = 30 °C.
Figure 9. Third-order Intermodulation Distor tion vs. Power Out
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
21.0
0 2 4 6 8 10 12 14 16 18 20 2
2
POUT (W)Z
POWER GAIN (dB)Z
IDQ = 170 mA
IDQ = 500 mA
IDQ = 410 mA
IDQ = 330 mA
IDQ = 250 mA
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48
OUTPUT POWER (WPEP)Z
IMD (dBc)Z
IM5-
IM5+
IM7-
IM7+
IM3-
IM3+
8Agere Systems Inc.
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET August 2004
AGR09030GUM Preliminary Data Sheet
AGR09030GUM Package Dimensions
Controll ing dimensions are in mill imeters.
Note: Dimensions are shown in .
Label Notes:
■M before the part number denotes model program. X before the part number denotes engineering prototype.
■The last three letters of the part number denote wafer technology, flange type, and packaging technology.
■YYWWL is the date code including place of manufacture: year year work week (YYWW), L = location (P = Phillipines).
■XXXXX = fi v e-digit wa fe r l o t n u m be r.
■ZZZZZZZZ = Assembly lot number.
SIDE VIEW
TOP VIEW BOTTOM VIEW
END VIEW
6.00 ± 0.20
(0.234 ± 0.0078)
2.95 REF
11.00 ± 2.0
(0.434 ± 0.078)
2.24
(0.088)
0.61 x 0.61 MAX x 45º
2.50
(0.098)
2.90
(0.114)
2 PLACES
1.00
(0.039)
0.315
(0.013)
0.65
(0.03)
1.1
(0.043)
2 PLACES
11.00 / 11.30 MAX
(0.433 / 0.448 MAX)
16.00
(0.630)
1.27
(0.0495)
(0.025 x 0.025)
(0.115)
0.315
(0.013)
15.90 / 16.20 MAX
(0.626 / 0.6378 MAX)
3.35 REF
14º ± 1º
0.90
(0.036)
0.254
(0.099)
(0.131)
2.95
(0.115)
3.15 ± 0.15
(0.123 ± 0.006)
1.60
(0.063)
0.015
(0.0006)
1. DRAIN
2. GATE
11.35
(0.448)
3. SOURCE
AGR09030GUM
AGERE
YYWW L XXXXX
ZZZZZZZZ
m
illimete
rs
inches()
-
--------------------
----
Preliminary Data Sheet AGR09030GUM
August 2004 30 W, 865 MHz—895 MHz, N-Chann el E-Mode, Lateral MOSFET
ATC is a registered trademark of American Technical Ceramics Corp.
Kemet is a registered trademark of KRC Trade Corporation.
Sprague is a registered trademark of Sprague Elec tric Company Corporation.
Murata is a registered trademark of Murata Electronics North America, Inc.
Kreger is a registered trademark of Kreger Components, Inc.
Vitramon is a registered trademark of Vitramon Incorporated.
Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.
Copyright © 2004 Agere Systems Inc.
All Rights Reserved
August 2004
DS04-246RFPP (Replaces PB04- 094RF PP)
For additional information, contact your Agere Systems Account Manager or the following:
INTERNET: http://www.agere.com
E-MAIL: docmaster@agere.com
N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109- 9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-41 06)
ASIA: CHINA: (86) 21-5 461 4688 (Shanghai), (86) 755-25881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-18 50 (Seoul), SINGAPORE: (65) 6778- 8833 , TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE: Tel. (44 ) 134 4 296 400
RF Power Product Information
For product and application information, please visit our website: http://www.agere.com/rfpower.
