2N6515 2N6516 2N6517 NPN
2N6518 2N6519 2N6520 PNP
COMPLEMENTARY SILICON
HIGH VOLTAGE TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6515, 2N6518
series types are complementary silicon transistors
designed for high voltage driver and amplifier
applications.
MARKING: FULL PART NUMBER
TO-92 CASE
2N6515 2N6516 2N6517
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N6518 2N6519 2N6520 UNITS
Collector-Base Voltage VCBO 250 300 350 V
Collector-Emitter Voltage VCEO 250 300 350 V
Emitter-Base Voltage (NPN) VEBO 6.0 V
Emitter-Base Voltage (PNP) VEBO 5.0 V
Continuous Collector Current IC 500 mA
Continuous Base Current IB 250 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
2N6515 2N6516 2N6517
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N6518 2N6519 2N6520
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
ICBO V
CB=150V - 50 - - - - nA
ICBO V
CB=200V - - - 50 - - nA
ICBO V
CB=250V - - - - - 50 nA
IEBO V
EB=5.0V (NPN) - 50 - 50 - 50 nA
IEBO V
EB=4.0V (PNP) - 50 - 50 - 50 nA
BVCBO IC=100μA 250 - 300 - 350 - V
BVCEO IC=1.0mA 250 - 300 - 350 - V
BVEBO IE=10μA (NPN) 6.0 - 6.0 - 6.0 - V
BVEBO IE=10μA (PNP) 5.0 - 5.0 - 5.0 - V
VCE(SAT) IC=10mA, IB=1.0mA - 0.30 - 0.30 - 0.30 V
VCE(SAT) IC=20mA, IB=2.0mA - 0.35 - 0.35 - 0.35 V
VCE(SAT) IC=30mA, IB=3.0mA - 0.50 - 0.50 - 0.50 V
VCE(SAT) IC=50mA, IB=5.0mA - 1.0 - 1.0 - 1.0 V
VBE(SAT) IC=10mA, IB=1.0mA - 0.75 - 0.75 - 0.75 V
VBE(SAT) IC=20mA, IB=2.0mA - 0.85 - 0.85 - 0.85 V
VBE(SAT) IC=30mA, IB=3.0mA - 0.90 - 0.90 - 0.90 V
VBE(ON) VCE=10V, IC=100mA - 2.0 - 2.0 - 2.0 V
hFE VCE=10V, IC=1.0mA 35 - 30 - 20 -
hFE VCE=10V, IC=10mA 50 - 45 - 30 -
hFE VCE=10V, IC=30mA 50 300 45 270 30 200
hFE VCE=10V, IC=50mA 45 220 40 200 20 100
hFE VCE=10V, IC=100mA 25 - 20 - 15 -
R1 (14-August 2012)
www.centralsemi.com
2N6515 2N6516 2N6517 NPN
2N6518 2N6519 2N6520 PNP
COMPLEMENTARY SILICON
HIGH VOLTAGE TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C)
SYMBOL TEST CONDITIONS MIN MAX UNITS
fT V
CE=20V, IC=10mA, f=20MHz 40 200 MHz
Ccb V
CE=20V, IC=10mA, f=20MHz 6.0 pF
Ceb V
EB=0.5V, f=1.0MHz (NPN) 80 pF
Ceb V
EB=0.5V, f=1.0MHz (PNP) 100 pF
ton V
CC=100V, VBE=2.0V, IC=50mA, IB1=10mA 200 ns
toff V
CC=100V, IC=50mA, IB1=IB2=10mA 3.5 μs
www.centralsemi.com
R1 (14-August 2012)
