TIP130/131/132
TIP135/136/137
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
TIP131, TIP132,TIP135 ANDTIP137 ARE
SGS-THOMSONPREFERRED SALESTYPES
DESCRIPTION
The TIP130, TIP131 and TIP132 are silicon
epitaxial-base NPN power transistors in
monolithic Darlington configuration, mounted in
Jedec TO-220 plastic package. They are intented
for use inpower linearand switching applications.
The complementary PNP types are TIP135,
TIP136and TIP137.
INTERNAL SCHEMATIC DIAGRAM
October 1995
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP130 TIP131 TIP132
PNP TIP135 TIP136 TIP137
VCBO Collector-Base Voltage (IE= 0) 60 80 100 V
VCEO Collector-Emitter Voltage (IB= 0) 60 80 100 V
VEBO Emitter-Base Voltage (IC=0) 5 V
I
CCollector Current 8 A
ICM Collector Peak Current 12 A
IBBase Current 0.3 A
Ptot Total Dissipation at Tcase ≤ 25 oC
Tamb ≤ 25 oC70
2W
W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
* For PNPtypes voltage and current values are negative.
R1Typ. = 5 KΩR2Typ. =150 Ω
123
TO-220
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 1.78
63.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25o
C unlessotherwisespecified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEO Collector Cut-off
Current (IB=0) V
CE = Half Rates VCEO 0.5 mA
ICBO Collector Cut-off
Current (IB=0) V
CB = Half Rates VCBO 0.2 mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 5 mA
V
CEO(sus)* Collector-Emitter
Sustaining Voltage
(IB=0)
I
C=30mA
for TIP130/135
for TIP131/136
for TIP132/137
60
80
100
V
V
V
VCE(sat)* Collector-Emitter
Saturation Voltage IC=4A I
B=16mA
I
C=6A I
B=30mA 2
4V
V
V
BE(on)* Base-Emitter Voltage IC=4A V
CE = 4 V 2.5 V
hFE* DC Current Gain IC=1A V
CE =4V
I
C=4A V
CE =4V 500
1000 15000
* For PNP types voltage and current values are negative.
TIP130/TIP131/TIP132/TIP135/TIP136/TIP137
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
TIP130/TIP131/TIP132/TIP135/TIP136/TIP137
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Informationfurnishedis believedtobe accurateand reliable. However,SGS-THOMSON Microelectronics assumesno responsability for the
consequencesof use ofsuch information nor for anyinfringement of patentsor otherrightsof third parties whichmay resultsfrom itsuse. No
license is granted by implication orotherwise under any patentor patent rights ofSGS-THOMSON Microelectronics. Specifications mentioned
in this publicationare subjectto change withoutnotice.This publication supersedes andreplaces all informationpreviouslysupplied.
SGS-THOMSON Microelectronics products arenotauthorized foruseascriticalcomponents in lifesupportdevices orsystems without express
written approvalof SGS-THOMSON Microelectonics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia- Brazil - France- Germany- HongKong - Italy- Japan- Korea - Malaysia- Malta- Morocco - TheNetherlands-
Singapore- Spain - Sweden- Switzerland- Taiwan - Thailand -United Kingdom- U.S.A
.
TIP130/TIP131/TIP132/TIP135/TIP136/TIP137
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