1/20October 2004
VNQ690SP-E
QUAD CHANNEL HIGH SIDE DRIVER
Rev. 1
Tabl e 1. General Features
(*) Per each channel
OUTPUT CURRENT PER CHANNEL: 10A
CMOS COMPATIBLE INPUTS
OPEN LOAD DETECTION (OFF STATE)
UNDERVOLTAGE & OVERVOLT AGE
n
SHUT- DOWN
OVERVOLTAGE CLAMP
THERMAL SHUT-D OWN
CURRENT LIMITATION
VERY LOW STAND-BY POWER DISSIPATION
PROTECTI ON AG A INS T:
n
LOSS OF GROUN D & LOSS OF VCC
REVERSE BATTERY PROTECTION (**)
IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
DESCRIPTION
The VNQ690SP-E is a monolithic device made by
using| STMicroelectronics VIPower M0-3
Technology, intended for driving resistive or
inductive loads with one side connected to ground.
This device has four independen t channel s.
Built-in thermal shut down and output current
limitation protect the chip from over temperature
and short circuit.
Figure 1. Package
Tabl e 2. Order Codes
Not e: (**) See application schematic at page 9
Type RDS(on) Iout VCC
VNQ690SP-E 90m(*) 10A 36V
1
10
PowerSO-10
Package Tube Tape and Reel
PowerSO-10VNQ690SP-E VNQ690SPTR-E
VNQ690SP-E
2/20
Figu re 2. Blo ck D ia gra m
Table 3. Absolute Maximum Ratings
Symbol Parameter Value Unit
VCC Supply voltage (continuous) 41 V
-VCC Reverse supply voltage (continuous) -0.3 V
IOUT Output current (continuous), per each channel Internally limited A
IR Reverse output current (continuous), per each channel -15 A
IIN Input current +/- 10 mA
ISTAT Status current +/- 10 mA
IGND Ground current at TC<25°C (continuous) -200 mA
VESD
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPUT
- VCC
4000
4000
5000
5000
V
V
V
V
Ptot Power dissipation at TC=25°C78W
EMAX Maximum Switching Energy
(L=0.38mH; RL=0; Vbat=13.5V; Tjstart=150ºC; IL=14A) 53 mJ
TjJunction operating temperature -40 to 150 °C
Tstg Storage temperature -65 to 150 °C
UNDERVOLTAGE
OVERVOLTAGE
OVERTEMP. 1
OVERTEMP. 2
I
LIM2
DEMAG 2
I
LIM1
DEMAG 1
INPUT 1
INPUT 2
GND
V
CC
OUTPUT 1
OUTPUT 2
DRIVER 2
DRIVER 1
LOGIC
OVERTEMP. 3
OVERTEMP. 4
I
LIM4
DEMAG 4
I
LIM3
DEMAG 3
INPUT 3
INPUT 4 OUTPUT 3
OUTPUT 4
DRIVER 4
DRIVER 3
STATUS STATUS
OPEN L OAD
OFF-STATE
3/20
VNQ690SP-E
Figu re 3. Con f ig urat i on Diagram (Top View) & Su gg e ste d Conne ct ions for U nu s ed an d N.C. Pins
Figure 4. Current and Voltage Conventions
Table 4. Thermal Data
Note: 1. Whe n m ounted on a st andard si ngle- sided FR -4 board wi t h 0.5cm² of Cu (at le ast 35 µm thick)
Note: 2. Whe n m ounted on a st andard si ngle- si ded FR -4 board wi th 6cm² of Cu (at le ast 35 µm th ick).
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case (MAX) per channel 2 °C/W
Rtj-amb Thermal resistance junction-ambient (MAX) 52 (1) 37 (2) °C/W
Connection / Pin Status N.C. Output Input
Floating X X X X
To Ground X Through 10Kresistor
1
2
3
4
5
6
7
8
9
10
11
GND
OUTPUT 4
OUTPUT 3
OUTPUT 2
OUTPUT 1
STATUS
INP U T 4
INPUT 3
INPUT 2
INPUT 1
V
CC
(*) VFn = VCCn - VOUTn during reverse battery condition
I
S
I
GND
V
CC
GND
INPUT 4
INPUT 3
I
OUT2
I
IN3
I
IN4
V
IN4
V
IN3
V
CC
V
OUT2
I
OUT1
V
OUT1
INPUT 1
I
IN1
INPUT 2
I
IN2
V
IN1
V
IN2
I
STAT
STATUS
V
STAT
OUTPUT 4
OUTPUT 3 I
OUT3
I
OUT4
V
OUT4
V
OUT3
OUTPUT 1
OUTPUT 2
V
F1
(*)
VNQ690SP-E
4/20
ELECTRICAL CHARACTERISTICS
(VCC=6V up to 24V; -40°C<Tj<150°C unless otherw ise specified)
Table 5. Power (Per each channel)
Not e: (#) Per device.
Table 6. Protection (see note 1)
(per each channel)
Note: 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and n um ber of ac tivation cyc l es
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VCC (#) Operating supply voltage 6 13 36 V
VUSD (#) Undervoltage shutdown 3.5 4.6 6 V
VUVhyst (#) Undervoltage hysteresis 0.2 1 V
VOV (#) Overvoltage shutdown 36 V
VOVhyst (#) Overvoltage hysteresis 0.25 V
IS (#) Supply current
Off state; VIN=VOUT=0V; VCC=13.5V
Off state; VIN=VOUT=0V; VCC=13.5V
Tj=25°C
On state; VIN=3.25V; 9V<VCC<18V
12
12
6
40
25
12
µA
µA
mA
RON On state resistance IOUT=1A; Tj=25°C; 9V<VCC<18V
IOUT=1A, Tj=150°C; 9V<VCC<18V 90
180 m
m
IL(off1) Off State Output Current VIN=VOUT=0V 0 50 µA
IL(off2) Off State Output Current VIN=0V; VOUT=3.5V -75 0 µA
IL(off3) Off State Output Current VIN=VOUT=0V; VCC=13V; Tj =125°C 5 µA
IL(off4) Off State Output Current VIN=VOUT=0V; VCC=13V; Tj =25°C 3 µA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
TTSD Shutdown tempe ratur e 150 170 2 00 °C
TRReset temperature 135 °C
Thyst Thermal hysteresis 7 15 25 °C
ILIM DC Short circuit current 9V<VCC<36V
6V<VCC<36V 10 14 20
20 A
A
Vdemag Turn-off output voltage
clamp IOUT=2A; VIN=0V; L=6mH VCC-41 VCC-48 VCC-55 V
VSTAT Status low output
voltage ISTAT=1.6mA 0.5 V
ILSTAT Status leakage current Normal operation; VSTAT=5V 10 µA
CSTAT Status pin input
capacitance Normal operation; VSTAT=5V 25 pF
VSCL Status clamp voltage ISTAT=1mA
ISTAT=-1mA 66.8
-0.7 8V
V
5/20
VNQ690SP-E
ELECTRICAL CHARACTERISTICS (contin ued)
Table 7. VCC - Output Diode
Table 8. Switching (VCC=13V)
Table 9. Openload Detection (off state) per each cha nnel
Table 10. Logic Input
Figu re 5. Sta tu s Ti m in g Wav eforms
Symbol Parameter Test Conditions Min Typ Max Unit
VFForward on Voltage -IOUT=0.9A; Tj=150°C 0.6 V
Symbol Parameter Test Conditions Min Typ Max Unit
td(on) Tur n-on delay time RL=13 channels 1,2,3,4 30 µs
td(off) Tur n-off delay time RL=13 channels 1,2,3,4 30 µs
dVOUT/dt(on) Tur n-on voltag e slope RL=13 channels 1,2,3,4 See
relative
diagram Vs
dVOUT/dt(off) Tur n-off voltag e slope RL=13 channels 1,2,3,4 See
relative
diagram Vs
Symbol Parameter Test Conditions Min Typ Max Unit
tSDL Status Delay See Figure 1 (Openload detection
reading must be performed after TDOL). 20 µs
VOL Openload Voltage
Detection Threshold VIN=0V 1.5 2.5 3.5 V
TDOL Openload Detection Delay
at Turn Off VCC=18V 300 µs
Symbol Parameter Test Conditions Min Typ Max Unit
VIL Input Low Level Voltage 1.25 V
VIH Input High Level Voltage 3.25 V
VHYST Input Hysteresis Voltage 0.5 V
IIH Input high level voltage VIN=3.25V 10 µA
IIL Input Current VIN=1.25V 1 µA
VICL Input Clamp Voltage IIN=1mA
IIN=-1mA 6 6.8
-0.7 8V
V
VIN
VSTAT
tDOL
OPENLOAD STATUS TIMING
VIN
VST AT
OVERTEMP STATUS TIMING
tSDL
tSDL
tSDL
VNQ690SP-E
6/20
Table 11 . Truth Table (Per each channe l)
Figure 6. Switching Ch aracteristi cs
CONDITIONS INPUT OUTPUT SENSE
Normal Operation L
HL
HH
H
Overtemperature L
HL
LH
L
Undervoltage L
HL
LX
X
Overvoltage L
HL
LH
H
Current Limitation L
HL
XH
H
Output Voltage > VOL L
HH
HL
H
t
t
VLOAD
VIN
80%
10%
dVOUT/dt(on)
td(off)
90%
dVOUT/dt(off)
td(on) tr
7/20
VNQ690SP-E
Tabl e 12. Electrical Transient Requirements
ISO T/R 7637/1
Test Pulse
TEST LEVELS
I II III IV Delays and
Impedance
1 -25 V -50 V -75 V -100 V 2 ms 10
2 +25 V +50 V +75 V +100 V 0.2 ms 10
3a -25 V -50 V -100 V -150 V 0.1 µs 50
3b +25 V +50 V +75 V +100 V 0.1 µs 50
4 -4 V -5 V -6 V -7 V 100 ms, 0.01
ISO T/R
7637/1
Test Pulse
Test Levels Result
IIIIIIIV
1CCCC
2CCCC
3aCCCC
3bCCCC
4CCCC
5CEEE
CLASS CONTENTS
C All functions of the device are performed as designed after exposure to disturbance.
E One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
VNQ690SP-E
8/20
Figure 7. Waveforms
STATUS
INPUTn
NORMAL OPERATION
UNDERVOLTAGE
VCC VUSD
VUSDhyst
INPUTn
OVERVOLTAGE
VCC
VCC>VOV
STATUS
INPUTn
STATUS
undefined
OVERTEMPERATURE
INPUTn
STATUS
TTSD
TR
Tj
LOAD VOLTA GEn
VCC<VOV
LOAD VOLTAGEn
LOAD VOLTA GEn
LOAD CURRENTn
STATUS
INPUTn
OPENLOAD with external pull-up
LOAD VOLTAGEn
tDOL tDOL
VOL
9/20
VNQ690SP-E
Figure 8. Application Schematic
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
Solution 1 : Resistor in the gr ound line (R
GND
only). T his
can be used with any type of load.
The following is an indication on how to dimension the
R
GND
resistor.
1) R
GND
600mV / (IS(on)max).
2) R
GND
≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
GND
(when VCC< 0: durin g rever se
battery situations) is:
PD= (-VCC)2/R
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with fo rmula (1) where IS(on)max becom es the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
GND
will
produce a shif t (IS(on)max * R
GND
) in the input thr esholds
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2 (see
below).
Solution 2: A diode (D
GND
) in the ground line.
A resistor (R
GND
=1kΩ) should be inserted in parallel to
D
GND
if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several diffe rent HSD. Also i n this case, the pr esence of
the ground network will produce a shift (
j
600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to p reven t tha t, d uring bat tery voltag e tr ansie nt,
the current exceeds the Absolute Maximum Rating.
Safest co nfigu ration for unu sed INPU T a nd S TAT US pin
is to leave them unconnected.
LO AD DUMP PROT ECTION
Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating.
The same applies if the device will be subject to
transients on the V CC line that are greater than the on es
shown in the ISO T/R 7637/1 table.
V
CC
D
ld
+5V
R
prot
STATUS
INPUT1
+5V
OUTPUT3
OUTPUT1
OUTPUT2
OUTPUT4
INPUT3
INPUT4
R
prot
R
prot
R
prot
R
prot
INPUT2
µ
C
GND
D
GND
R
GND
V
GND
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
VNQ690SP-E
10/20
µC I/Os PROTECTION:
If a ground protection network is used and negative
transient are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of µC I/Os.
-VCCpeak/Ilatchup Rprot (VOHµC-VIH-V
GND
) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup 20mA; VOHµC 4.5V
5k Rprot 65k.
Recommen ded R pr ot value is 10kΩ.
11/20
VNQ690SP-E
Figure 9. Off State Output Current
Figure 10. Input High Level
Figure 11. Input Clamp Voltage
Figure 12. High Level Input Current
Figure 13. Input Low Level
Figure 14. Input Hysteresis Voltage
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
1
1.25
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
IL(off1) (µA)
Vcc=24V
Vout=0V
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
Vih (V )
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
6
6.25
6.5
6.75
7
7.25
7.5
7.75
8
Vicl (V)
Iin=1mA
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Iih (µA)
Vin=3.25V
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
Vil (V )
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
Vihyst (V )
VNQ690SP-E
12/20
Figure 15. Overvoltage Shutdown
Figure 16. Turn-on Voltage Slope
Figure 17. I LIM Vs T case
Figure 18. Openloa d Off State Detection
Threshold
Figure 19. Turn-off Voltage Slope
Figure 20. On State Resistance Vs VCC
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
30
32.5
35
37.5
40
42.5
45
47.5
50
Vov (V)
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
50
100
150
200
250
300
350
400
450
500
dVout/dt(on) (V/ms)
Vcc=13V
RI=13Ohm
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
5
7.5
10
12.5
15
17.5
20
22.5
25
Ilim (A)
Vcc=13V
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Vol (V)
Vin=0V
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
100
150
200
250
300
350
400
450
500
550
600
dVout/dt(off) (V/ms)
Vcc=13V
RI=13Ohm
0 5 10 15 20 25 30 35 40
Vcc (V)
20
40
60
80
100
120
140
160
Ron (mOhm)
Iout=1A
Tc= 25ºC
Tc= -40ºC
Tc= 150ºC
13/20
VNQ690SP-E
Figure 21. On State Resistance Vs Tcase
Figure 22. Status Leakage Current
Figure 23. Status Clamp V oltage
Figu re 24. S t at us Low Output V ol ta ge
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
20
40
60
80
100
120
140
160
Ron (mOhm)
Iout=1A
Vcc=9 V; 18V & 36V
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
Ilstat (µA)
Vstat=5V
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
6.6
6.7
6.8
6.9
7
7.1
7.2
7.3
7.4
Vscl (V)
Istat=1mA
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Vstat (V)
Istat=1.6mA
VNQ690SP-E
14/20
Figure 25. Maximum turn of f current versus load inductance
A = Single Pulse at TJstart=150ºC
B= Repet iti ve pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated wit h RL=0
In case of repetitive pulses , Tjstart (at begi nning of
each demagnetization) of every pulse must not
exceed the temperature specified above for
curves B and C.
1
10
100
0.01 0.1 1 10 100
L(mH)
ILMAX (A)
A
B
C
VIN, IL
t
Demagnetization Demagnetization Demagnetization
15/20
VNQ690SP-E
PowerS O-10™ Thermal Data
Figu re 26. P ow e rS O-1 0™ PC Boa rd
Figure 27. Rthj-amb Vs PCB copper area in open bo x free air condition
Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm2).
30
35
40
45
50
55
0246810
PCB Cu heatsink area (cm^2)
RTHj_amb (°C/W)
Tj-Tamb=50°C
VNQ690SP-E
16/20
Figure 28. P ow erS O-10 Th ermal Imp edance Jun ction Am bient Singl e Pulse
Figu re 29 . Th erm al fittin g m od e l of a double
channel HSD in PowerSO -10 Pulse calculation formula
Table 13. Thermal Parameter
0.01
0.1
1
10
100
1000
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
ZTH (°C/W)
Footprint
6 cm
2
T_amb
Pd1
C1
R4
C3 C4
R3R1 R6R5R2
C5 C6C2
Pd2
R2
C1 C2
R1
Tj_1
Tj_2
Area/island (cm2) Footprint 6
R1 (°C/W) 0.05
R2 (°C/W) 0.3
R3( °C/W) 0.3
R4 (°C/W) 0.8
R5 (°C/W) 12
R6 (°C/W) 37 22
C1 (W.s/°C) 0.001
C2 (W.s/°C) 5.00E-03
C3 (W.s/°C) 0.02
C4 (W.s/°C) 0.3
C5 (W.s/°C) 0.75
C6 (W.s/°C) 3 5
ZTHδRTH δZTHtp 1δ()+=
where δtpT=
17/20
VNQ690SP-E
PACKAGE MECHANICAL
Table 14. PowerSO-10™ Mechanical Data
No te : (*) Mua r onl y POA P013P
Figure 30. PowerSO-10™ P ackage Dimensions
Symbol millimeters
Min Typ Max
A 3.35 3.65
A (*) 3.4 3.6
A1 0.00 0.10
B 0.40 0.60
B (*) 0.37 0.53
C 0.35 0.55
C (*) 0.23 0.32
D 9.40 9.60
D1 7.40 7.60
E 9.30 9.50
E2 7.20 7.60
E2 (*) 7.30 7.50
E4 5.90 6.10
E4 (*) 5.90 6.30
e 1.27
F 1.25 1.35
F (*) 1.20 1.40
H 13.80 14.40
H (*) 13.8 5 14.35
h 0.50
L 1.20 1.80
L (*) 0.8 0 1.10
a
α (*)
DETAIL "A"
PLANE
SEATING
α
L
A1
F
A1
h
A
D
D1
= =
= =
E4
0.10 A
C
A
B
B
DET AIL "A"
SEATING
PL A NE
E2
10
1
eB
HE
0.25
P095A
VNQ690SP-E
18/20
Figure 31. PowerSO-10 Suggested Pad Layout And Tube Shipment (No Suffix)
Figure 32. Tape And Reel Shipment (suffix “TR”)
6.30
10.8 - 11
14 .6 - 14 .9
9.5
1
2
3
4
51.27
0.67 - 0.73
0.54 - 0.6
10
9
8
7
6
B
A
C
C
A
B
MUARCASABLANCA
All d imens ions are in mm.
Base Q. ty Bulk Q.ty Tube le ngth (± 0.5) A B C (± 0.1)
Casablanca 50 1000 532 10.4 16.4 0.8
Muar 50 1000 532 4.9 17.2 0.8
REEL DIMENSIONS
All dimensions are in mm.
Base Q.ty 600
Bulk Q.ty 600
A (max) 330
B (min) 1.5
C (± 0.2) 13
F20.2
G (+ 2 / -0) 24.4
N (min) 60
T (max) 30.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
All dimensions are in mm.
Tape width W 24
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 24
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 11.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2
Top
cover
tape
End
Start
No componentsNo co m ponents Components
500m m min
500mm min
Em pt y com ponents pockets
saled with cover tape.
User direction of feed
19/20
VNQ690SP-E
RE VISION HISTORY
Date Revision Description of Changes
Oct. 2004 1 - First Issue.
VNQ690SP-E
20/20
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by i m plicati on or otherwise under any pate nt or patent ri ghts o f STMic roelectronics. Specifications mentioned i n t hi s publ i cation are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for us e as cri t i cal com ponents in l i fe support de vices or s ys tems without express written approval of STMi croele ct ronic s.
The ST l ogo is a re gi stered tr ademar k of STM i croel ectro ni cs .
All other nam es are t he propert y o f thei r respective owners
© 2004 STMi croel ectronics - All ri ghts reserv ed
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