Philips Semiconductors Preliminary specification Silicon PIN diode FEATURES High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Low series inductance For applications up to 3 GHz. APPLICATIONS e RF attenuators and switches. DESCRIPTION Two planar PIN diodes in series configuration ina SOT323 small plastic SMD package. LIMITING VALUES BAP64-04W PINNING PIN DESCRIPTION 1 anode 2 cathode 3 common connection iH Marking code: 4W- Fig.1 Simplified outline (SOT323) and symbol. HF MAM434 In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode Vr continuous reverse voltage - 100 Vv lr continuous forward current - 100 mA Prot total power dissipation Ts = 90C - 250 mW Tstg storage temperature 65 +150 C Tj junction temperature 65 +150 C 1999 Dec 17Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-04W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. | MAX. | UNIT Per diode Ve forward voltage lp =50 mA 0.95 1.1 Vv IR reverse current Vr = 100 V - 10 HA VR =20V - 1 HA Cq diode capacitance Vr = 0; f= 1 MHz 0.52 - pF Va =1V; f= 1MHz 0.37 - pF Vp, = 20 V; f= 1 MHz 0.23 0.35 pF tp diode forward resistance lp = 0.5 mA; f = 100 MHz; note 1 20 40 Q l- = 1 mA; f= 100 MHz; note 1 10 20 Q le = 10 mA; f = 100 MHz; note 1 2 3.8 Q le = 100 mA; f = 100 MHz; note 1 0.7 1.35 Q TL charge carrier life time when switched from Ir = 10 mA to 1.55 - bs IR = 6 mA; Ry = 100 Q; measured at lp =3 mA Ls series inductance 1.4 - nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT th j-s thermal resistance from junction to soldering point tbd K/W 1999 Dec 17 3Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-04W GRAPHICAL DATA MCD777 102 (2) 10 Ip (mA) f = 100 MHz; Tj = 25C. Fig.2 Forward resistance as a function of forward current; typical values. MCD778 600 Cq (fF) 400 200 0 0 4 8 12 16 20 Vr (V) f= 1 MHz; T; = 25C. Fig.3 Diode capacitance as a function of reverse voltage; typical values. MCD779 0 |S24|? (dB) -1 2 -3 4 +5 0.5 1 15 2 25 3 f (GHz) (1) Ip=100 mA. (3) Ip=1mA. (2) Ip=10 mA. (4) Ie =0.5 mA. Diode inserted in series with a 50 Q stripline circuit and biased via the analyzer Tee network. Tamb = 25C. Fig.4 Insertion loss (|S24|*) of the diode as a function of frequency; typical values. MCD780 [Soa]? (dB) -10 -30 0.5 1 1.5 25 3 f (GHz) Diode zero biased and inserted in series with a 50 Q stripline circuit. Tamb = 25 C. Fig.5 Isolation (|S24|) of the diode as a function of frequency; typical values. 1999 Dec 17Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-04W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 j oO y Q | 4 A | Ay 4 I ' t c 1 2 ' A J <t Lp) ee] bp SOB P [e] detail X 0 1 2mm beep scale DIMENSIONS (mm are the original dimensions) Ay A UNIT max bp c D E e ey He Lp Q Vv w 1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23 | o8 | %' | os | oto] 18 | 115} 1 | %5 | oo | 015 | 013 | F | OF REFERENCES OUTLINE EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT323 SC-70 --} 97-02-28 1999 Dec 17