HVXY UZX /STMOSFET HVX Series Power MOSFET 2SK1685 (FP7W90] BRAT YF LT N-F 4 RIL, DYANYARY bw 900V 7A +02 @ANSE (iss) AVAL. RICO 7 ABROAD BR EDYNAL). uy bac (AD % 4a 3 a| 4 +H (Unit : mm] 5.5 03 OF VARA MNAL. OR4 YFLIIA LIEU. saaer ik we} : @AC24OVRANOAL VF VIBE @ Gate 02 0,7 02 O24 YF YIFKOBESE () Drain a ervi\-9 @ Source Metkz RATINGS @xtRATK Absolute Maximum Ratings BOUOW@ a0 & cag BSE Hifz Item Symbol Conditions Ratings Unit RTF EE Storage Temperature Tstg 55~150 C Fe RAE g Channel Temperature Teh 150 C Fu4y: J AME Drain ~ Source Voltage | Voss 900 Vv Fo 7 REE Gate - Source Voltage Vass +30 Vv BLA YE DC Ip 7 Continuous Drain Current A Peak Ipp 14 Vo ABR (ER) Continuous Source Current (DC) Is 7 A SRK =9R% Total Power Dissipation Pr Te=25C 65 WwW RIE Vai HET 3 AR. ACI IPN DD kV Dielectric Strength dis Terminals to case,AC 1 minute MDT be TOR (HES | Skg + cm) 8 kg-cm Mounting Torque (Recommended torque : Skg + cm) @BAH - MAM Electrical Characteristics (Tc=25C) A 8 aus cS fF BUS Ratings | Hie Item Symbol Conditions min. | typ. | max. | Unit bei 2 i it Voltage Vieripss| Ib=1mA, Vos=0V 900 Vv a. Vor Drain Current Inss_ | Vos=900V, Vos=0V 250 | pA oe ET akage Current Icss | Vas=+30V, Vos=0V +100} nA Forward Transconduciance gis | b=3.5A, Vos=10V 27 | 45 S Sheila Drie Souroa On sate Resistance Ros(on)| In=3.5A, Vos=10V 1.6 Q Cote vr rcohold wohage Vrn | Ipb=1lmA, Vos=10V 2 3 Vv | Source : brain ide Fornard Vohege Vsp | Is=3.5A, Vas=0V 1.5 Vv Fetal Reciotance G jc ion and. oe 1.92 [C/W Gate Charge Charactrstics Qe | Vos=10V, Ib=7A, Voo=400V 52 nc or Capackanos Ciss 1,700 pF ae anster Gapackance Crss | Vos=10V, Ves=0V, f=1MHz 150 oF Oso Capactans Coss 300 oF e-YAy Jurr-on Tie ton | 15=3.5A, Vos=10V, Ri=430 $0 | 160 | ms Turn-off Time loft 200 | 400 | ns2SK1685 (FP7wW90) M@ tt) CHARACTERISTIC DIAGRAMS Tet FET >-YA2M4A YEH FhCa iE Transfer Characteristics Static Drain-Source On-state Resistance Gate Threshold Voitage T T Gs t pulse test Ltypical T T Vos = 10V Q) lo= 1 mA typical KL > Bi In(A} F~bULEUMMBE Viulv) Ref > Y2ARA LIER Rosion} [ nn 1 i i 0 5 40 0 40 80 720 760 -60 40 0 40 a0 120 160 7h /-AMIBE Vos(v) 4-28 ToC) TARE TolC) REO wit ah TE BRT FNL IY R Safe Operating Area Transient Thermal Impedance Capacitance 14 | nt EI TT SA KU Bizt lo(A) 7 WRBURR Bic(t) CC/W) FrNEIYR Ciss Coss Crss (pF) 2 a CACM a oR tener sr ps LTE TET . ! 4 5103 S$ 10-2 OT 5 (GU 5 IQ) 5 192 0 50 00 KL4>-Y2MBE Vos(V) AFA t Cs) Ke >-Y2 MME Vos(V) SEARS 5-2 Fob F este Power Derating Gate Charge Characteristics | IN LITLE N UTEP TT ys pea 6 & 8 TUTE N Try | 8 Ae 3 Soi TINE |e 2 50 4 = io & e LLL TEN Ty f& f x ! 200 ! alii TTP Nyy fe : FLITE TTP ENG Is sf PLETE PT NG ye be ALELTT TTP TEN | SS 0 50 100 150 20 40 60 80 (01 77iRB ToC) F* BH Og(nc)