MC33363 High Voltage Switching Regulator The MC33363 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on-chip 700 V/1.0 A SENSEFET power switch, 450 V active off-line startup FET, duty cycle controlled oscillator, current limiting comparator with a programmable threshold and leading edge blanking, latching pulse width modulator for double pulse suppression, high gain error amplifier, and a trimmed internal bandgap reference. Protective features include cycle-by-cycle current limiting, input undervoltage lockout with hysteresis, output overvoltage protection, and thermal shutdown. This device is available in a 16-lead dual-in-line and wide body surface mount packages. * On-Chip 700 V, 1.0 A SENSEFET Power Switch * Rectified 240 Vac Line Source Operation * On-Chip 450 V Active Off-Line Startup FET * Latching PWM for Double Pulse Suppression * Cycle-By-Cycle Current Limiting * Input Undervoltage Lockout with Hysteresis * Output Overvoltage Protection Comparator * Trimmed Internal Bandgap Reference * Internal Thermal Shutdown http://onsemi.com MARKING DIAGRAMS PDIP-16 P SUFFIX CASE 648E MC33363P AWLYYWW SO-16W DW SUFFIX CASE 751N MC33363DW AWLYYWW 16 1 16 1 A WL YY WW = Assembly Location = Wafer Lot = Year = Work Week PIN CONNECTIONS AC Input Startup Input Regulator Output 1 Startup Mirror UVLO 6 OVP RT CT 7 PWM Latch Osc Driver S 1 VCC 3 VCC Reg 8 Startup Input Q 3 Overvoltage Protection Input DC Output 4 13 5 12 RT 6 11 CT 7 10 Regulator Output 8 9 Gnd 11 16 Power Switch Drain R PWM Ipk Gnd Overvoltage Protection Input Voltage Feedback Input Compensation (Top View) Compensation EA 4, 5, 12, 13 Power Switch Drain LEB Thermal Gnd 16 ORDERING INFORMATION 9 Device Package Shipping 10 MC33363DW SO-16W 47 Units/Rail Voltage Feedback Input MC33363DWR2 SO-16W 1000 Tape & Reel MC33363P PDIP-16 25 Units/Rail This device contains 221 active transistors. Figure 1. Simplified Application Semiconductor Components Industries, LLC, 2002 September, 2002 - Rev. 5 1 Publication Order Number: MC33363/D MC33363 MAXIMUM RATINGS (Note 1) AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAA Rating Power Switch (Pin 16) Drain Voltage Drain Current Symbol Value Unit VDS IDS 700 1.0 V A Startup Input Voltage (Pin 1, Note 2) Pin 3 = Gnd Pin 3 1000 F to ground Vin V Power Supply Voltage (Pin 3) VCC 40 V Input Voltage Range Voltage Feedback Input (Pin 10) Compensation (Pin 9) Overvoltage Protection Input (Pin 11) RT (Pin 6) CT (Pin 7) VIR -1.0 to Vreg V 400 500 C/W Thermal Characteristics P Suffix, Dual-In-Line Case 648E Thermal Resistance, Junction-to-Air Thermal Resistance, Junction-to-Case (Pins 4, 5, 12, 13) DW Suffix, Surface Mount Case 751N Thermal Resistance, Junction-to-Air Thermal Resistance, Junction-to-Case (Pins 4, 5, 12, 13) Refer to Figures 15 and 16 for additional thermal information. RJA RJC 80 15 RJA RJC 95 15 Operating Junction Temperature TJ - 25 to +150 C Storage Temperature Tstg - 55 to +150 C 8 = 1.0 F, for typical values TJ = 25C, for min/max values TJ is the operating junction temperature range that applies (Note 3), unless otherwise noted.) ELECTRICAL CHARACTERISTICS (VCC = 20 V, RT = 10 k, CT = 390 pF, CPin AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA Symbol Min Typ Max Unit Vreg 5.5 6.5 7.5 V Line Regulation (VCC = 20 V to 40 V) Regline - 30 500 mV Load Regulation (IO = 0 mA to 10 mA) Regload - 44 200 mV Vreg 5.3 - 8.0 V Characteristic REGULATOR (Pin 8) Output Voltage (IO = 0 mA, TJ = 25C) Total Output Variation over Line, Load, and Temperature OSCILLATOR (Pin 7) Frequency CT = 390 pF TJ = 25C (VCC = 20 V) TJ = Tlow to Thigh (VCC = 20 V to 40 V) CT = 2.0 nF TJ = 25C (VCC = 20 V) TJ = Tlow to Thigh (VCC = 20 V to 40 V) fOSC fOSC/V Frequency Change with Voltage (VCC = 20 V to 40 V) 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL-STD-883, Method 3015. Machine Model Method 200 V. 2. Maximum power dissipation limits must be observed. 3. Tested junction temperature range for the MC33363: Thigh = +125C Tlow = -25C http://onsemi.com 2 kHz 260 255 285 - 310 315 60 59 67.5 - 75 76 - 0.1 2.0 kHz MC33363 ELECTRICAL CHARACTERISTICS (continued) (VCC = 20 V, RT = 10 k, CT = 390 pF, CPin 8 = 1.0 F, for typical values TJ = 25C, for min/max values TJ is the operating junction temperature range that applies (Note 4), unless otherwise noted.) AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA Symbol Min Typ Max Unit VFB 2.52 2.6 2.68 V Regline - 0.6 5.0 mV IIB - 20 500 nA Open Loop Voltage Gain (TJ = 25C) AVOL - 82 - dB Gain Bandwidth Product (f = 100 kHz, TJ = 25C) GBW - 1.0 - MHz Output Voltage Swing High State (ISource = 100 A, VFB < 2.0 V) Low State (ISink = 100 A, VFB > 3.0 V) VOH VOL 4.0 - 5.3 0.2 - 0.35 Input Threshold Voltage Vth 2.47 2.6 2.73 V Input Bias Current (Vin = 2.6 V) IIB - 100 500 nA DC(max) DC(min) 48 - 50 0 52 0 - - 14 - 17 32 Characteristic ERROR AMPLIFIER (Pins 9, 10) Voltage Feedback Input Threshold Line Regulation (VCC = 20 V to 40 V, TJ = 25C) Input Bias Current (VFB = 2.6 V) V OVERVOLTAGE DETECTION (Pin 11) PWM COMPARATOR (Pins 7, 9) Duty Cycle Maximum (VFB = 0 V) Minimum (VFB = 2.7 V) % POWER SWITCH (Pin 16) Drain-Source On-State Resistance (ID = 200 mA) TJ = 25C TJ = Tlow to Thigh RDS(on) ID(off) - 0.2 50 A Rise Time tr - 50 - ns Fall Time tf - 50 - ns Ilim 0.5 0.72 0.9 A - - 20 6.0 - - Drain-Source Off-State Leakage Current (VDS = 700 V) OVERCURRENT COMPARATOR (Pin 16) Current Limit Threshold (RT = 10 k) STARTUP CONTROL (Pin 1) Peak Startup Current (Vin = 400 V) VCC = 0 V VCC = (Vth(on) - 0.2 V) Istart mA Off-State Leakage Current (Vin = 50 V, VCC = 20 V) ID(off) - 40 200 A Vth(on) 11 15.2 18 V VCC(min) 7.5 9.5 11.5 V - - 0.25 3.2 0.5 5.0 UNDERVOLTAGE LOCKOUT (Pin 3) Startup Threshold (VCC Increasing) Minimum Operating Voltage After Turn-On TOTAL DEVICE (Pin 3) Power Supply Current Startup (VCC = 10 V, Pin 1 Open) Operating ICC 4. Tested junction temperature range for the MC33363: Thigh = +125C Tlow = -25C http://onsemi.com 3 mA MC33363 500 k CT = 100 pF VCC = 20 V TA = 25C CT = 200 pF 200 k CT = 500 pF 100 k CT = 1.0 nF 50 k 20 k CT = 2.0 nF CT = 5.0 nF CT = 10 nF 10 k 7.0 10 15 20 30 70 50 1.0 I PK, POWER SWITCH PEAK DRAIN CURRENT (A) f OSC , OSCILLATOR FREQUENCY (Hz) 1.0 M RT, TIMING RESISTOR (k) VCC = 20 V CT = 1.0 F TA = 25C 0.8 0.6 0.4 0.2 Inductor supply voltage and inductance value are adjusted so that Ipk turn-off is achieved at 5.0 s. 0.1 7.0 0.15 0.1 10 15 20 50 30 50 40 70 70 60 50 40 RC/RT Ratio Charge Resistor Pin 6 to Vreg 30 1.0 2.0 3.0 5.0 7.0 VCC = 20 V VO = 1.0 to 4.0 V RL = 5.0 M CL = 2.0 pF TA = 25C Gain 0 30 60 Phase 40 90 20 120 0 150 100 1.0 k 10 k 100 k 180 10 M 1.0 M Vsat , OUTPUT SATURATION VOLTAGE (V) TIMING RESISTOR RATIO Figure 4. Maximum Output Duty Cycle versus Timing Resistor Ratio 60 70 VCC = 20 V CT = 2.0 nF TA = 25C RD/RT Ratio Discharge Resistor Pin 6 to Gnd RT, TIMING RESISTOR (k) 80 -20 10 30 Figure 3. Oscillator Charge/Discharge Current versus Timing Resistor 100 A VOL, OPEN LOOP VOLTAGE GAIN (dB) Dmax, MAXIMUM OUTPUT DUTY CYCLE (%) 0.2 , EXCESS PHASE (DEGREES) I chg /I dscg , OSCILLATOR CHARGE/DISCHARGE CURRENT (mA) 0.3 0.08 7.0 20 Figure 2. Power Switch Peak Drain Current versus Timing Resistor VCC = 20 V TA = 25C 0.5 15 RT, TIMING RESISTOR (k) Figure 1. Oscillator Frequency versus Timing Resistor 0.8 10 0 Source Saturation (Load to Ground) -1.0 Vref -2.0 2.0 Sink Saturation (Load to Vref) 1.0 VCC = 20 V TA = 25C Gnd 0 0 0.2 0.4 0.6 0.8 f, FREQUENCY (Hz) IO, OUTPUT LOAD CURRENT (mA) Figure 5. Error Amp Open Loop Gain and Phase versus Frequency Figure 6. Error Amp Output Saturation Voltage versus Load Current http://onsemi.com 4 10 1.0 MC33363 VCC = 20 V AV = -1.0 CL = 10 pF TA = 25C 1.75 V 1.75 V 0.50 V 1.0 s/DIV 1.0 s/DIV Figure 7. Error Amplifier Small Signal Transient Response Figure 8. Error Amplifier Large Signal Transient Response 0 20 -20 I pk , PEAK STARTUP CURRENT (mA) VCC = 20 V RT = 10 k CPIN 8 = 1.0 F TA = 25C -40 -60 0 32 4.0 8.0 12 16 Pulse tested with an on-time of 20 s to 300 s at < 1.0% duty cycle. The on-time is adjusted at Pin 1 for a maximum peak current out of Pin 3. 0 0 2.0 4.0 6.0 8.0 10 12 Ireg, REGULATOR SOURCE CURRENT (mA) VCC, POWER SUPPLY VOLTAGE (V) Figure 9. Regulator Output Voltage Change versus Source Current Figure 10. Peak Startup Current versus Power Supply Voltage ID = 200 mA 24 16 8.0 Pulse tested at 5.0 ms with < 1.0% duty cycle so that TJ is as close to TA as possible. 0 -50 VPin 1 = 400 V TA = 25C 10 20 COSS, DRAIN-SOURCE CAPACITANCE (pF) R DS(on), DRAIN-SOURCE ON-RESISTANCE ( ) V reg, REGULATOR VOLTAGE CHANGE (mV) 1.70 V -80 0.5 V/DIV 3.00 V 20 mV/DIV 1.80 V VCC = 20 V AV = -1.0 CL = 10 pF TA = 25C -25 0 25 50 75 100 125 150 160 VCC = 20 V TA = 25C 120 80 40 0 1.0 COSS measured at 1.0 MHz with 50 mVpp. 10 100 TA, AMBIENT TEMPERATURE (C) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Power Switch Drain-Source On-Resistance versus Temperature Figure 12. Power Switch Drain-Source Capacitance versus Voltage http://onsemi.com 5 14 1000 MC33363 100 2.4 CT = 2.0 nF 1.6 RT = 10 k Pin 1 = Open Pin 4, 5, 10, 11, 12, 13 = Gnd TA = 25C 0.8 0 10 0 20 1.0 0.01 40 0.1 1.0 10 Figure 13. Supply Current versus Supply Voltage Figure 14. DW and P Suffix Transient Thermal Resistance 2.4 IIIII IIIII IIIII 80 2.0 Printed circuit board heatsink example 70 L 60 1.6 2.0 oz Copper L 3.0 mm Graphs represent symmetrical layout 50 RJA 10 0.8 0.4 40 0 1.2 20 30 40 0 50 100 R JA, THERMAL RESISTANCE JUNCTION-TO-AIR ( C/W) 2.8 PD(max) for TA = 50C PD, MAXIMUM POWER DISSIPATION (W) t, TIME (s) 90 30 10 VCC, SUPPLY VOLTAGE (V) 100 R JA , THERMAL RESISTANCE JUNCTION-TO-AIR ( C/W) 30 L = 12.7 mm of 2.0 oz. copper. Refer to Figures 15 and 16. III III III III Printed circuit board heatsink example 80 L RJA 60 2.0 oz Copper L 3.0 mm Graphs represent symmetrical layout 40 5.0 4.0 3.0 2.0 PD(max) for TA = 70C 20 0 100 P D , MAXIMUM POWER DISSIPATION (W) CT = 390 pF R JA , THERMAL RESISTANCE JUNCTION-TO-AIR ( C/W) I CC, SUPPLY CURRENT (mA) 3.2 0 L, LENGTH OF COPPER (mm) 10 20 1.0 30 40 0 50 L, LENGTH OF COPPER (mm) Figure 15. DW Suffix (SOP-16L) Thermal Resistance and Maximum Power Dissipation versus P.C.B. Copper Length Figure 16. P Suffix (DIP-16) Thermal Resistance and Maximum Power Dissipation versus P.C.B. Copper Length http://onsemi.com 6 MC33363 PIN FUNCTION DESCRIPTION AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAA Pin Function Description 1 Startup Input This pin connects directly to the rectified ac line voltage source. Internally Pin 1 is tied to the drain of a high voltage startup MOSFET. During startup, the MOSFET supplies internal bias, and charges an external capacitor that connects from the VCC pin to ground. 2 - 3 VCC 4, 5, 12, 13 Ground 6 RT Resistor RT connects from this pin to ground. The value selected will program the Current Limit Comparator threshold and affect the Oscillator frequency. 7 CT Capacitor CT connects from this pin to ground. The value selected, in conjunction with resistor RT, programs the Oscillator frequency. 8 Regulator Output 9 Compensation 10 Voltage Feedback Input 11 Overvoltage Protection Input This input provides runaway output voltage protection due to an external component or connection failure in the control loop feedback signal path. It has a 2.6 V threshold and normally connects through a resistor divider to the converter output, or to a voltage that represents the converter output. 14, 15 - These pins have been omitted for increased spacing between the high voltages present on the Power Switch Drain, and the ground potential on Pins 12 and 13. 16 Power Switch Drain This pin has been omitted for increased spacing between the rectified ac line voltage on Pin 1 and the VCC potential on Pin 3. This is the positive supply voltage input. During startup, power is supplied to this input from Pin 1. When VCC reaches the UVLO upper threshold, the startup MOSFET turns off and power is supplied from an auxiliary transformer winding. These pins are the control circuit grounds. They are part of the IC lead frame and provide a thermal path from the die to the printed circuit board. This 6.5 V output is available for biasing external circuitry. It requires an external bypass capacitor of at least 1.0 F for stability. This pin is the Error Amplifier output and is made available for loop compensation. It can be used as an input to directly control the PWM Comparator. This is the inverting input of the Error Amplifier. It has a 2.6 V threshold and normally connects through a resistor divider to the converter output, or to a voltage that represents the converter output. This pin is designed to directly drive the converter transformer and is capable of switching a maximum of 700 V and 1.0 A. http://onsemi.com 7 MC33363 AC Input Startup Input Current Mirror Regulator Output 6.5 V 8 Startup Control Band Gap Regulator I VCC 3 UVLO 2.25 I CT 4I 7 OVP Oscillator DC Output Overvoltage Protection Input 14.5 V/ 9.5 V 6 RT 1 11 2.6 V 16 PWM Latch Power Switch Drain Driver S Q R PWM Comparator Thermal Shutdown Leading Edge Blanking Current Limit Comparator Compensation 450 9 270 A Gnd 9.0 Error Amplifier 2.6 V 4, 5, 12, 13 10 Voltage Feedback Input Figure 17. Representative Block Diagram 2.6 V Capacitor CT 0.6 V Compensation Oscillator Output PWM Comparator Output PWM Latch Q Output Current Limit Propagation Delay Power Switch Gate Drive Current Limit Threshold Leading Edge Blanking Input (Power Switch Drain Current) Normal PWM Operating Range Figure 18. Timing Diagram http://onsemi.com 8 Output Overload MC33363 OPERATING DESCRIPTION Introduction The formula for the charge/discharge current along with the oscillator frequency are given below. The frequency formula is a first order approximation and is accurate for CT values greater than 500 pF. For smaller values of CT, refer to Figure 1. Note that resistor RT also programs the Current Limit Comparator threshold. The MC33363 represents a new higher level of integration by providing all the active high voltage power, control, and protection circuitry required for implementation of a flyback or forward converter on a single monolithic chip. This device is designed for direct operation from a rectified 240 Vac line source and requires a minimum number of external components to implement a complete converter. A description of each of the functional blocks is given below, and the representative block and timing diagrams are shown in Figures 17 and 18. I The MC33363 uses cycle-by-cycle current limiting as a means of protecting the output switch transistor from overstress. Each on-cycle is treated as a separate situation. Current limiting is implemented by monitoring the output switch current buildup during conduction, and upon sensing an overcurrent condition, immediately turning off the switch for the duration of the oscillator ramp-up period. The Power Switch is constructed as a SENSEFET allowing a virtually lossless method of monitoring the drain current. It consists of a total of 1780 cells, of which 46 are connected to a 9.0 ground-referenced sense resistor. The Current Sense Comparator detects if the voltage across the sense resistor exceeds the reference level that is present at the inverting input. If exceeded, the comparator quickly resets the PWM Latch, thus protecting the Power Switch. The current limit reference level is generated by the 2.25 I output of the Current Mirror. This current causes a reference voltage to appear across the 450 resistor. This voltage level, as well as the Oscillator charge/discharge current are both set by resistor RT. Therefore when selecting the values for RT and CT, RT must be chosen first to set the Power Switch peak drain current, while CT is chosen second to set the desired Oscillator frequency. A graph of the Power Switch peak drain current versus RT is shown in Figure 2 with the related formula below. 2.25 I I RC Current Limit Reference 6 RT RD Current Limit Comparator and Power Switch Current Mirror 8 CT 4I 7 Oscillator chgdscg 4C T The pulse width modulator consists of a comparator with the oscillator ramp voltage applied to the non-inverting input, while the error amplifier output is applied into the inverting input. The Oscillator applies a set pulse to the PWM Latch while CT is discharging, and upon reaching the valley voltage, Power Switch conduction is initiated. When CT charges to a voltage that exceeds the error amplifier output, the PWM Latch is reset, thus terminating Power Switch conduction for the duration of the oscillator ramp-up period. This PWM Comparator/Latch combination prevents multiple output pulses during a given oscillator clock cycle. The timing diagram shown in Figure 18 illustrates the Power Switch duty cycle behavior versus the Compensation voltage. The oscillator frequency is controlled by the values selected for the timing components RT and CT. Resistor RT programs the oscillator charge/discharge current via the Current Mirror 4 I output, Figure 3. Capacitor CT is charged and discharged by an equal magnitude internal current source and sink. This generates a symmetrical 50 percent duty cycle waveform at Pin 7, with a peak and valley threshold of 2.6 V and 0.6 V respectively. During the discharge of CT, the oscillator generates an internal blanking pulse that holds the inverting input of the AND gate Driver high. This causes the Power Switch gate drive to be held in a low state, thus producing a well controlled amount of output deadtime. The amount of deadtime is relatively constant with respect to the oscillator frequency when operating below 1.0 MHz. The maximum Power Switch duty cycle at Pin 16 can be modified from the internal 50% limit by providing an additional charge or discharge current path to CT, Figure 19. In order to increase the maximum duty cycle, a discharge current resistor RD is connected from Pin 7 to ground. To decrease the maximum duty cycle, a charge current resistor RC is connected from Pin 7 to the Regulator Output. Figure 4 shows an obtainable range of maximum output duty cycle versus the ratio of either RC or RD with respect to RT. 1.0 f PWM Comparator and Latch Oscillator and Current Mirror Regulator Output I 5.4 R chgdscg T Blanking Pulse R PWM Comparator I Figure 19. Maximum Duty Cycle Modification http://onsemi.com 9 pk 8.8 T - 1.077 1000 MC33363 Startup Control The Power Switch is designed to directly drive the converter transformer and is capable of switching a maximum of 700 V and 1.0 A. Proper device voltage snubbing and heatsinking are required for reliable operation. A Leading Edge Blanking circuit was placed in the current sensing signal path. This circuit prevents a premature reset of the PWM Latch. The premature reset is generated each time the Power Switch is driven into conduction. It appears as a narrow voltage spike across the current sense resistor, and is due to the MOSFET gate to source capacitance, transformer interwinding capacitance, and output rectifier recovery time. The Leading Edge Blanking circuit has a dynamic behavior in that it masks the current signal until the Power Switch turn-on transition is completed. The current limit propagation delay time is typically 233 ns. This time is measured from when an overcurrent appears at the Power Switch drain, to the beginning of turn-off. An internal Startup Control circuit with a high voltage enhancement mode MOSFET is included within the MC33363. This circuitry allows for increased converter efficiency by eliminating the external startup resistor, and its associated power dissipation, commonly used in most off-line converters that utilize a UC3842 type of controller. Rectified ac line voltage is applied to the Startup Input, Pin 1. This causes the MOSFET to enhance and supply internal bias as well as charge current to the VCC bypass capacitor that connects from Pin 3 to ground. When VCC reaches the UVLO upper threshold of 15.2 V, the IC commences operation and the startup MOSFET is turned off. Operating bias is now derived from the auxiliary transformer winding, and all of the device power is efficiently converted down from the rectified ac line. The startup MOSFET will provide an initial peak current of 20 mA, Figure 10, which decreases rapidly as VCC and the die temperature rise. The steady state current will self limit in the range of 8.0 mA with VCC shorted to ground. The startup MOSFET is rated at a maximum of 400 V with VCC shorted to ground, and 500 V when charging a VCC capacitor of 1000 F or less. Error Amplifier An fully compensated Error Amplifier with access to the inverting input and output is provided for primary side voltage sensing, Figure 17. It features a typical dc voltage gain of 82 dB, and a unity gain bandwidth of 1.0 MHz with 78 degrees of phase margin, Figure 5. The noninverting input is internally biased at 2.6 V 3.1% and is not pinned out. The Error Amplifier output is pinned out for external loop compensation and as a means for directly driving the PWM Comparator. The output was designed with a limited sink current capability of 270 A, allowing it to be easily overridden with a pull-up resistor. This is desirable in applications that require secondary side voltage sensing, Figure 20. In this application, the Voltage Feedback Input is connected to the Regulator Output. This disables the Error Amplifier by placing its output into the sink state, allowing the optocoupler transistor to directly control the PWM Comparator. Regulator A low current 6.5 V regulated output is available for biasing the Error Amplifier and any additional control system circuitry. It is capable of up to 10 mA and has short-circuit protection. This output requires an external bypass capacitor of at least 1.0 F for stability. Thermal Shutdown and Package Internal thermal circuitry is provided to protect the Power Switch in the event that the maximum junction temperature is exceeded. When activated, typically at 155C, the Latch is forced into a `reset' state, disabling the Power Switch. The Latch is allowed to `set' when the Power Switch temperature falls below 145C. This feature is provided to prevent catastrophic failures from accidental device overheating. It is not intended to be used as a substitute for proper heatsinking. The MC33363 is contained in a heatsinkable plastic dual-in-line package in which the die is mounted on a special heat tab copper alloy lead frame. This tab consists of the four center ground pins that are specifically designed to improve thermal conduction from the die to the circuit board. Figures 15 and 16 show a simple and effective method of utilizing the printed circuit board medium as a heat dissipater by soldering these pins to an adequate area of copper foil. This permits the use of standard layout and mounting practices while having the ability to halve the junction to air thermal resistance. The examples are for a symmetrical layout on a single-sided board with two ounce per square foot of copper. Figure 22 shows a practical example of a printed circuit board layout that utilizes the copper foil as a heat dissipater. Note that a jumper was added to the layout from Pins 8 to 10 in order to enhance the copper area near the device for improved thermal conductivity. The application circuit requires two ounce copper foil in order to obtain 8.0 watts of continuous output power at room temperature. Overvoltage Protection An Overvoltage Protection Comparator is included to eliminate the possibility of runaway output voltage. This condition can occur if the control loop feedback signal path is broken due to an external component or connection failure. The comparator is normally used to monitor the primary side VCC voltage. When the 2.6 V threshold is exceeded, it will immediately turn off the Power Switch, and protect the load from a severe overvoltage condition. This input can also be driven from external circuitry to inhibit converter operation. Undervoltage Lockout An Undervoltage Lockout comparator has been incorporated to guarantee that the integrated circuit has sufficient voltage to be fully functional before the output stage is enabled. The UVLO comparator monitors the VCC voltage at Pin 3 and when it exceeds 14.5 V, the reset signal is removed from the PWM Latch allowing operation of the Power Switch. To prevent erratic switching as the threshold is crossed, 5.0 V of hysteresis is provided. http://onsemi.com 10 MC33363 F1 1.0 A D4 92 to 276 Vac Input D2 C1 33 D3 1N4006 C5 4.0 nF D1 C4 1.0 R1 15 k C3 820 pF 3 UVLO 14.5 V/ 9.5 V 6 7 Osc D6 R5 MUR 39 120 Startup Reg 8 11 D7 T1 MBR 1635 C2 10 R4 5.1 k 1 2 IC2 3 MOC 8103 IC3 TL431B 2 16 Driver S C9 C10 330 330 C8 330 R3 1.0 k OVP 2.6 V PWM Latch R7 2.2 k 1.0 W D5 MUR 1100E 1 Mirror C6 47 pF R6 180 k 1.0 W Q L1 5.0 H R8 220 R9 2.80 k C7 100 nF 1 R PWM ILimit 5 LEB 4 Thermal 9 270 A R10 2.74 k 2.6 V EA 10 R2 2.7 k IC1 MC33363 4, 5, 12, 13 Figure 20. 8.0 W Off-Line Converter Test Conditions Results Line Regulation Vin = 92 Vac to 276 Vac, IO 1.6 A = 1.0 mV Load Regulation g Vin = 115 Vac, IO = 0.4 A to 1.6 A = 4.0 mV Vin = 230 Vac, IO = 0.4 A to 1.6 A = 4.0 mV Vin = 115 Vac, IO = 1.6 A Triangular = 2.0 mVpp, Spike = 12 mVpp Vin = 230 Vac, IO = 1.6 A Triangular = 2.0 mVpp, Spike = 12 mVpp Vin = 115 Vac, IO = 1.6 A 78.6%* Vin = 230 Vac, IO = 1.6 A 75.6% Output Ripple Efficiency y This data was taken with the components listed below mounted on the printed circuit board shown in Figure 22. * With MBR2535CTL, 79.8% efficiency. PCB layout modification is required to use this rectifier. For high efficiency and small circuit board size, the Sanyo Os-Con capacitors are recommended for C8, C9, C10 and C11. C8, C9, C10 = Sanyo Os-Con #6SA330M, 330 F 6.3 V. C11 = Sanyo Os-Con #10SA220M, 220 F 10 V. L1 = Coilcraft S5088-A, 5.0 H, 0.11 . T1 = Coilcraft S5502-A Primary: 77 turns of # 28 AWG, Pin 1 = start, Pin 8 = finish. Two layers 0.002 Mylar tape. Secondary: 5 turns of # 22 AWG, 2 strands bifiliar wound, Pin 5 = start, Pin 4 = finish. Two layers 0.002 Mylar tape. Auxiliary: 13 turns of # 28 AWG wound in center of bobbin, Pin 2 = start, Pin 7 = finish. Two layers 0.002 Mylar tape. Gap: 0.006 total for a primary inductance (LP) of 1.0 mH. Core and Bobbin: Coilcraft PT1950, E187, 3F3 material. Figure 21. Converter Test Data http://onsemi.com 11 5.05 V/1.6 A DC Output C11 220 C12 1.0 MC33363 Caution! High Voltages DC Output C4 R3 R3 R2 R9 J1 R1 D1 IC3 IC2 D2 R10 C3 C7 C12 C11 IC1 F1 AC Line Input R8 R4 C2 L1 R5 D6 C10 D3 D4 D5 C9 R7 T1 C1 R6 D7 C8 C5 C6 1 (Top View) 2.75" 2.25" MC33363 (Bottom View) Figure 22. Printed Circuit Board and Component Layout (Circuit of Figure 20) http://onsemi.com 12 MC33363 PACKAGE DIMENSIONS PDIP-16 P SUFFIX CASE 648E-01 ISSUE O -A- R 16 9 M L -B- 1 8 P J F C DIM A B C D F G H J K L M P R S -T- SEATING PLANE S K H G D 13 PL 0.25 (0.010) M T B A S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION A AND B DOES NOT INCLUDE MOLD PROTRUSION. 5. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.25 (0.010). 6. ROUNDED CORNER OPTIONAL. S INCHES MIN MAX 0.740 0.760 0.245 0.260 0.145 0.175 0.015 0.021 0.050 0.070 0.100 BSC 0.050 BSC 0.008 0.015 0.120 0.140 0.295 0.305 0 10 0.200 BSC 0.300 BSC 0.015 0.035 MILLIMETERS MIN MAX 18.80 19.30 6.23 6.60 3.69 4.44 0.39 0.53 1.27 1.77 2.54 BSC 1.27 BSC 0.21 0.38 3.05 3.55 7.50 7.74 0 10 5.08 BSC 7.62 BSC 0.39 0.88 SO-16W DW SUFFIX CASE 751N-01 ISSUE O -A- T 16 9 -B- 1 0.010 (0.25) P M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION. M 8 13X J D 0.010 (0.25) M T A S B S F R X 45 C -T- S K 9X SEATING PLANE M G http://onsemi.com 13 DIM A B C D F G J K M P R S T MILLIMETERS MIN MAX 10.15 10.45 7.40 7.60 2.35 2.65 0.35 0.49 0.50 0.90 1.27 BSC 0.25 0.32 0.10 0.25 0 7 10.05 10.55 0.25 0.75 2.54 BSC 3.81 BSC INCHES MIN MAX 0.400 0.411 0.292 0.299 0.093 0.104 0.014 0.019 0.020 0.035 0.050 BSC 0.010 0.012 0.004 0.009 0 7 0.395 0.415 0.010 0.029 0.100 BSC 0.150 BSC MC33363 Notes http://onsemi.com 14 MC33363 Notes http://onsemi.com 15 MC33363 The product described herein (MC33363), may be covered by one or more of the following U.S. patents: 4,553,084; 5,418,410; 5,477,175. There may be other patents pending. SENSEFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 16 MC33363/D