AP6924GEY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE K Low On-Resistance S Fast Switching Characteristic D Included Schottky Diode G 20V RDS(ON) 600m ID A SOT-26 BVDSS A 1A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D K S A G Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage (MOSFET) 20 V VKA Reverse Voltage (Schottky) 20 V VGS Gate-Source Voltage (MOSFET) +6 V ID@TA=25 Continuous Drain Current3 (MOSFET) 1 A 0.8 A 8 A 0.5 A ID@TA=70 3 Continuous Drain Current (MOSFET) 1 IDM Pulsed Drain Current (MOSFET) IF Average Forward Current (Schottky) 1 IFM Pulsed Forward Current (Schottky) 2 A PD@TA=25 Total Power Dissipation (MOSFET) 0.9 W Total Power Dissipation (Schottky) 0.9 W TSTG Storage Temperature Range -55 to 125 TJ Operating Junction Temperature Range -55 to 125 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 (MOSFET) 3 Maximum Thermal Resistance, Junction-ambient (Schottky) Data and specifications subject to change without notice Value Units 110 /W 110 /W 1 201204253 AP6924GEY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.02 - V/ RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=1A - - 600 m VGS=2.5V, ID=0.3A - - 2 VGS=0V, ID=250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance VDS=5V, ID=600mA - 1 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=16V ,VGS=0V - - 10 uA Gate-Source Leakage VGS=+6V, VDS=0V - - +10 uA ID=600mA - 1.3 2 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 0.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 0.5 - nC VDS=10V - 21 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=600mA - 53 - ns td(off) Turn-off Delay Time RG=3.3,VGS=5V - 100 - ns tf Fall Time RD=16.7 - 125 - ns Ciss Input Capacitance VGS=0V - 38 60 pF Coss Output Capacitance VDS=10V - 17 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 12 - pF Min. Typ. Max. Unit - - 1.2 V Min. Typ. Source-Drain Diode Symbol Parameter 2 Forward On Voltage VSD Test Conditions IS=750mA, VGS=0V Schottky Characteristics@Tj=25 Symbol Parameter Test Conditions Max. Units VF Forward Voltage Drop IF=500mA - - 0.5 V Irm Maximum Reverse Leakage Current Vr=20V - - 100 uA CT Junction Capacitance Vr=10V - 21 - pF Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180/W when mounted on min. copper pad. 2 AP6924GEY MOSFET 2.5 2.5 ID , Drain Current (A) T A =125 C 2.0 ID , Drain Current (A) T A =25 C 2.0 1.5 2.5V 1.0 V G =2.0V 0.5 5.0V 4.5V 3.5V o 5.0V 4.5V 3.5V o 1.5 2.5V 1.0 V G =2.0V 0.5 0.0 0.0 0 0.5 1 1.5 2 2.5 0.0 0.5 V DS , Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.9 1250 I D = 0.5A 1050 I D =1A V G =4.5V 1.6 Normalized RDS(ON) RDS(ON) (m) T A =25 o C 850 650 1.3 1.0 0.7 450 0.4 250 1 2 3 4 -50 5 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.0 2.0 0.8 T j =125 o C IS(A) 0.6 T j =25 o C 0.4 Normalized VGS(th) 1.5 1.0 0.5 0.2 0.0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Junction Temperature Reverse Diode 150 3 AP6924GEY f=1.0MHz 6 100 V DS =10V V DS =12V V DS =16V 4 C (pF) VGS , Gate to Source Voltage (V) I D =0.6A 5 3 C iss 2 C oss 1 C rss 0 10 0 0.4 0.8 1.2 1.6 2 1 3 5 7 9 11 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 100us Normalized Thermal Response (Rthja) Duty factor=0.5 1ms ID (A) 1 10ms 100ms 0.1 1s DC o T A =25 C Single Pulse 0.01 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=180 oC/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance SCHOTTKY DIODE 1 1 IF , Forward Current (A) IR , Reverse Current (mA) 10 20V 0.1 16V 0.01 0.001 T j = 1 25 o C T j = 25 o C 0.1 25 50 75 100 125 o T j , Junction Temperature ( C) Fig 1. Reverse Leakage Current v.s. Junction Temperature 0 0.2 0.4 0.6 0.8 V F , Forward Voltage Drop (V) Fig 2. Forward Voltage Drop 4