Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY
Electronics Corp. DIODE
▼ Low On-Resistance BVDSS 20V
▼ Fast Switching Characteristic RDS(ON) 600mΩ
▼ Included Schottky Diode ID1A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VKA V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
IFA
IFM A
PD@TA=25℃W
Total Power Dissipation (Schottky) W
TSTG Storage Temperature Range ℃
TJOperating Junction Temperature Range ℃
Symbol Value Units
Rthj-a Maximum Thermal Resistance, Junction-ambient3 (MOSFET) 110 ℃/W
Maximum Thermal Resistance, Junction-ambient3 (Schottky) 110 ℃/W
Data and specifications subject to change without notice
201204253
Pulsed Drain Current1 (MOSFET) 8
2
Total Power Dissipation (MOSFET) 0.9
Average Forward Current (Schottky) 0.5
Pulsed Forward Current1 (Schottky)
Continuous Drain Current3 (MOSFET) 1
Continuous Drain Current3 (MOSFET) 0.8
-55 to 125
-55 to 125
Parameter Rating
Drain-Source Voltage (MOSFET) 20
Reverse Voltage (Schottky) 20
Gate-Source Voltage (MOSFET) +6
AP6924GEY
0.9
RoHS-compliant Product
Thermal Data Parameter
1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, ruggedized
device design, ultra low on-resistance and cost-effectiveness.
K
A
G
D
S
DS
GAA
K
SOT-26
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=1A - - 600 mΩ
VGS=2.5V, ID=0.3A - - 2 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V
gfs Forward Transconductance VDS=5V, ID=600mA - 1 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+6V, VDS=0V - - +10 uA
QgTotal Gate Charge2ID=600mA - 1.3 2 nC
Qgs Gate-Source Charge VDS=16V - 0.3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 0.5 - nC
td(on) Turn-on Delay Time2VDS=10V - 21 - ns
trRise Time ID=600mA - 53 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 100 - ns
tfFall Time RD=16.7Ω- 125 - ns
Ciss Input Capacitance VGS=0V - 38 60 pF
Coss Output Capacitance VDS=10V - 17 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 12 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSD Forward On Voltage2IS=750mA, VGS=0V - - 1.2 V
Schottky Characteristics@Tj=25℃
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFForward Voltage Drop IF=500mA - - 0.5 V
Irm Maximum Reverse Leakage Current Vr=20V - - 100 uA
CTJunction Capacitance Vr=10V - 21 - pF
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
AP6924GEY
2
AP6924GE
Y
MOSFET
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
250
450
650
850
1050
1250
12345
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID= 0.5A
TA=25oC
0.0
0.5
1.0
1.5
2.0
2.5
0 0.5 1 1.5 2 2.5
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC5.0V
4.5V
3.5V
2.5V
VG=2.0V
0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.5 1.0 1.5 2.0 2.5
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=125oC5.0V
4.5V
3.5V
2.5V
VG=2.0V
0.4
0.7
1.0
1.3
1.6
1.9
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=1A
VG=4.5V
0.0
0.5
1.0
1.5
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th)
0.0
0.2
0.4
0.6
0.8
1.0
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=125oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
SCHOTTKY DIODE
Fig 1. Reverse Leakage Current Fig 2. Forward Voltage Drop
v.s. Junction Temperature
4
AP6924GEY
0.01
0.1
1
10
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=180oC/W
t
T
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.02
0
1
2
3
4
5
6
0 0.4 0.8 1.2 1.6 2
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =10V
VDS =12V
V DS =16V
I
D=0.6A
10
100
1357911
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.1
1
0 0.2 0.4 0.6 0.8
VF , Forward Voltage Drop (V)
IF , Forward Curren t ( A)
Tj=125oCT
j=25oC
0.001
0.01
0.1
1
10
25 50 75 100 125
Tj , Junction Temperature ( oC)
IR , Reve rse Curren t (mA)
20V
16V
