©2000 Fairchild Semiconductor International Rev. A, February 2000
BD234/236/238
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD234
: BD236
: BD238
- 45
- 60
- 100
V
V
V
VCEO Collector-Emitter Voltage: BD234
: BD236
: BD238
- 45
- 60
- 80
V
V
V
VCER Collector-Emitter Voltage: BD234
: BD236
: BD238
- 45
- 60
- 100
V
V
V
VEBO Emitter-Base Volt age - 5 V
IC Collector Current (DC) - 2 A
ICP *Collector Current (Pulse) - 6 A
PC Collector Dissipation (TC=25°C) 25 W
TJ Junction Tempe rature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbo l Param e ter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emit ter Susta ining Voltage
: BD2 34
: BD2 36
: BD2 38
IC = - 100mA, IB = 0 - 45
- 60
- 80
V
V
V
ICBO Collector Cut-of f Current : BD2 34
: BD2 36
: BD2 38
VCB = - 45V, IE = 0
VCB = - 6 0V, IE = 0
VCB = - 1 00V, IE = 0
- 100
- 100
- 100
µA
µA
µA
IEBO Emitter Cut -of f Curr ent VEB = - 5V, IC = 0 - 1 mA
hFE * DC Current Gain VCE = - 2 V, IC = - 150mA
VCE = - 2 V, IC = - 1A 40
25
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 1A , IB = - 0.1A - 0.6 V
VBE(on) * Base-Emitter ON Voltage VCE = - 2 V, IC = - 1A - 1.3 V
fT Current Gain Band width Product VCE = - 1 0V, IC = -250mA 3 MHz
BD234/236/238
Medium Power Linear and Switching
Applications
• Complement to BD 233/235/237 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
BD234/236/238
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-0.01 -0.1 -1 -10
-1
-10
-100
-1000
VCE = -2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.01
-0.1
-1
-10
VCE(sat)
VBE(sat)
IC = 10 IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.1
-1
-10
IC MAX. (Continuous)
BD238
BD236
BD234
10µs
100
µ
s
1ms
DC
IC MAX. (Pulsed)
IC[A], COLLECTOR CURRENT
VCE[V], COL LECTOR- EMI TTE R VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD234/236/238
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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The datasheet is printed for reference information only.
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