AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50
500V 29A
α
MOS
TM
Power Transistor
General Description Product Summary
V
DS
@ T
j,max
600V
I
DM
120A
R
DS(ON),max
0.15Ω
Q
g,typ
26.6nC
E
oss
@ 400V 6.3µJ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
R
θJC
* Drain current limited by maximum junction temperature.
500
29
2.5
0.4
AOTF29S50
65
--
Single pulsed avalanche energy
G
W
110
P
D
Repetitive avalanche energy
C
37.9357
mJ
mJ
Avalanche Current
C
18*18
Junction and Storage Temperature Range
T
C
=25°C
dv/dt
2.9
20
Power Dissipation
B
608
Gate-Source Voltage V
A
120
T
C
=100°C
Pulsed Drain Current
C
Continuous Drain
Current
T
C
=25°C I
D
29*
A7.5
±30
°C
29*
18*
50
The AOT29S50L & AOB29S50L & AOTF29S50L &
AOTF29S50 have been fabricated using the advanced
αMOS
TM
high voltage process that is designed to deliver high
levels of performance and robustness in switching
applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with guaranteed
avalanche capability these parts can be adopted quickly into
new and existing offline power supply designs.
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOT29S50L/AOB29S50L AOTF29S50L
Drain-Source Voltage
AOTF29S50
°C/W
W/
o
C
°C
Thermal Characteristics
0.5 -- °C/W
Maximum Junction-to-Case 0.35 3.3
°C/W
Derate above 25
o
C
Parameter AOT29S50L/AOB29S50L
0.3
-55 to 150
AOTF29S50L
100
Units
V/ns
Maximum Case-to-sink
A
Maximum Junction-to-Ambient
A,D
300
65 65
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
TO-263
D2PAK
G
D
S
GD
S
D
S
G
Top View
TO
220F
TO
220
G
D
S
AOTF29S50(L)
AOT29S50L AOB29S50L
D
Rev1.0: August 2017
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Symbol Min Typ Max Units
500 - -
550 600 -
- - 1
- 10 -
I
GSS
Gate-Body leakage current - - ±100 nΑ
V
GS(th)
Gate Threshold Voltage 2.6 3.3 3.9 V
- 0.13 0.15 Ω
- 0.34 0.4 Ω
V
SD
- 0.85 - V
I
S
Maximum Body-Diode Continuous Current - - 29 A
I
SM
- - 120 A
C
iss
- 1312 - pF
C
oss
- 88 - pF
C
o(er)
- 78 - pF
C
o(tr)
- 227 - pF
C
rss
- 2.5 - pF
R
g
- 4.8 - Ω
Q
g
- 26.6 - nC
Q
gs
- 6.2 - nC
Q
gd
- 9.2 - nC
t
D(on)
- 28 - ns
t
r
- 39 - ns
t
D(off)
- 103 - ns
t
f
- 40 - ns
t
rr
- 387 - ns
I
rm
- 29.6 - A
Q
rr
- 7.3 -µC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Peak Reverse Recovery Current I
F
=14.5A,dI/dt=100A/µs,V
DS
=400V
V
V
GS
=10V, I
D
=14.5A, T
J
=150°C
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
µA
V
DS
=0V, V
GS
=±30V
V
DS
=500V, V
GS
=0V
V
DS
=5V,I
D
=250µA
V
DS
=400V, T
J
=150°C
Zero Gate Voltage Drain Current
Body Diode Reverse Recovery Charge I
F
=14.5A,dI/dt=100A/µs,V
DS
=400V
Maximum Body-Diode Pulsed Current
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
Body Diode Reverse Recovery Time I
F
=14.5A,dI/dt=100A/µs,V
DS
=400V
Reverse Transfer Capacitance
BV
DSS
V
GS
=10V, V
DS
=400V, I
D
=14.5A,
R
G
=25Ω
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=400V, I
D
=14.5A
Gate Source Charge
Gate Drain Charge
V
GS
=10V, I
D
=14.5A, T
J
=25°C
SWITCHING PARAMETERS
I
DSS
Effective output capacitance, time
related
I
R
DS(ON)
Static Drain-Source On-Resistance
I
S
=14.5A,V
GS
=0V, T
J
=25°C
Diode Forward Voltage
Input Capacitance V
GS
=0V, V
DS
=100V, f=1MHz
Output Capacitance
V
GS
=0V, V
DS
=100V, f=1MHz
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
D
=250µA, V
GS
=0V, T
J
=150°C
Effective output capacitance, energy
related
H
V
GS
=0V, V
DS
=0 to 400V, f=1MHz
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.5A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
Rev1.0: August 2017
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics@25°C
V
GS
=4.5V
6V
10V
7V
0.01
0.1
1
10
100
1000
2 4 6 8 10
ID(A)
VGS(Volts)
Figure 3: Transfer Characteristics
-
55
°
C
VDS=20V
25°C
125°C
0.0
0.1
0.2
0.3
0.4
0.5
0 10 20 30 40 50 60
RDS(ON) (Ω)
ID(A)
Figure 4: On-Resistance vs. Drain Current and Gate
Voltage
VGS=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
VGS=10V
ID=14.5A
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ(oC)
Figure 6: Break Down vs. Junction Temperature
0
5
10
15
20
25
30
35
40
0 5 10 15 20
ID(A)
VDS (Volts)
Figure 2: On-Region Characteristics@125°C
V
GS
=4.5V
5V
10V
6V
5V
5.5V 5.5V
7V
Rev1.0: August 2017
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 5 10 15 20 25 30 35 40
VGS (Volts)
Qg(nC)
Figure 8: Gate-Charge Characteristics
VDS=400V
ID=14.5A
1
10
100
1000
10000
0 100 200 300 400 500
Capacitance (pF)
VDS (Volts)
Figure 9: Capacitance Characteristics
Ciss
Coss
C
rss
0.01
0.1
1
10
100
1000
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)29S50L (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF29S50(Note F)
10
µ
s
10ms
1ms
0.1sDC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
1s
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
25°C
125°C
0
2
4
6
8
10
0 100 200 300 400 500
Eoss(uJ)
VDS (Volts)
Figure 10: Coss stroed Energy
Eoss
Rev1.0: August 2017
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 15: Current De-rating (Note B)
0
100
200
300
400
500
600
700
25 50 75 100 125 150 175
EAS(mJ)
TCASE (°C)
Figure 14: Avalanche energy
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF29S50L(Note F)
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
1s
Rev1.0: August 2017
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)29S50L (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.35°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Ton
T
P
D
Single Pulse
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF29S50 (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
P
D
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF29S50L (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
P
D
Rev1.0: August 2017
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-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Rev1.0: August 2017
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