Semiconductor Diodes Minimum Forward Maximum Reverse Max. , Peak Current Current Rect. . , , Type Construction Inverse Current Application Connections Volts mA al Volts uA at Volts (mA) FERRANTI (Con/inued) Current Types (Continued) 28133 70 _ - 2 70 250 High speed logic Al 28140 15 _ - 1 15 250 Al 28141 50 _ _ 1 50 250 High speed Al 28142 30 _ ~_ 1 30 250 switching Al ZS143 70 _ _ 1 70 250- Al 28150 Silicon planar 50 _ _ 0. 001 50 250 Al 28151 epitaxial 100 _ _ 0.001 100 250 Al 28152 50 _ _ 0. 005 50 250 High temperature Al 25153 100 _ _ 0.005 100 250 operation Al 25154 50 _ - 0.1 50 250 Al 28155 100 _ _ 0.1 100 250 Al * Per diode ft Commoncathode {Common anode LT.T. Current Types AA143} 1 : 25 _ _ 20 20 60 A.M./F.M. detector Al AA144{ Germanium gold bonded 90 ~ 200 75 10 General purpose Al BA157 400 _ _ 5 400 400 High a Al BA158 Silicon 600 5 600 400 1g Spee Al BA1595 1,000 ~ 5 1,000 400) Switching Al BA160 Silicon planar 20 _ _ 1 10 =. 100 TV tuners Al BA170 Silicon junction 20 _ _ 3 15 = 150 Al BA200 35 _ 0.05 25 150 Al BA201 50 _ _ 0.1 30 =: 150 General purpose Al ene Silicon planar epitaxial too _ _ 0 5 a ib at BA243 20 _ _ 0.1 15 100 Radio/TV tuner Al BA244 20 _ _ 0.1 15 100 \ bandswitching Al BAW21 Silicon avalanche _ _ 0.1 70 ~=6. 400 Protection Al Raetot Silic 1 itaxial 50 _ _ 0.2 50 =:150 Al BAX16 ilicon planar epitaxia 150 _ _ 0.1 150 200 General ose Al BAY17| Silicon junction 15 0. 01 12 200 enera! pur Al BAY18 | 60 _ _ 0.01 50-2007 Al BB121A 3 to 25 Cap.4.5 to 5. 5pF 0.01 28 > Al BB121B 3to25 Cap.4.5to5.5pF 0.01 28 _ Al BB122 as . 3to 25 Cap.4.5to5.5pF 0.01 28 _ Al BB139 variable capacitance | ' 3to25 Cap.5.0to6.5pF 0.01 2 TV, U.H.F./VHLE. Al BBI41A Micon planar eplaxia 3to25 Cap.4.0to5.0pF 0.01 280 uners Al BB141B 3 to 25 Cap.4.0 to 5. 0pF 0.01 28 _ Al BB142 3to25 Cap.4.0to5.0pF 0.01 28 Al DK13,. 50 _ _ 60 50 =s-:120 Al DK14 80 _ _ 90 80 =120 Al bere . Germanium gold bonded 0 _ _ eo Oe i x DK20 50 25 50 70) General purpose = (qj DK21i / 8 _ _ 25 3 30 Al iran Silicon planar epitaxial 2 _ ~ . ; oO eo x ITT210. Silicon variable capacitance _ Cap. 8.0 to 12pF _ _ _ F.M., A.F.C. Al ITT600 75 _ - 0.1 50 = =200 Al ITT920 50 _ _ 0.2 50 =. 2200 Al ITT921 100 _ _ 0.2 100 =. 206 Al ITT922 150 _ _ 0.2 150 200 Al Preset Silicon planar epitaxial 0 _ _ o ; a, 0 General purpose A ITT2002 200 _ _ 0.1 150 = 100 Al ITT2003 250 _ _ 0.1 150 100 Al 1N914 75 _ _ 0.025 20 75 Al 1N916 75 _ _ 0.025 20 75 Al Continued