g [FERRANTI MPaaca semiconductors} PNP Silicon Planar High Voltage Transistors GENERAL DESCRIPTION These plastic encapsulated, general purpose transis- tors are designed for applications requiring high break- down voltages, low saturation voltages and low capacitance. The E-line package is formed by injection moulding a SILICONE plastic specially selected to provide a rugged one-piece encapsulation resistant to severe environ- ments and allow the high junction temperature opera- tion normally associated with metal can devices. PLASTIC E-LINE (TO-92) E-line encapsulated devices are approved for use in military, industrial and professional equipments. Alternative lead configurations are available as plug-in replacements of TO-5/39 and TO-18 metal can types and for flat mounting. ABSOLUTE MAXIMUM RATINGS Parameter Symbol MPSAS92 | MPSAQ3 Unit Collector-Base Voltage Veso -300 -200 Collector-Emitter Voltage Veeo 300 ~200 Emitter-Base Voltage Vepo 5 5 Collector Current Io --500 -500 mA Power Dissipation Prot at Tamb *= 25C 680 680 mW at Toase = 25C 1.8 1.8 Ww Operating and Storage Temp. Range Tj. Tstg 55 to +175 C THERMAL CHARACTERISTICS Parameter Symbol Rating Unit Thermal resistance junction to ambient Renij-amb) 220 C/W Junction to case Rth(j-case) 80 C/W SE19MPSA92/93 ELECTRICAL CHARACTERISTICS (at Tamp =: 25C unless otherwise stated). MPSA92 MPSA93 Parameter Symbol Unit | Test Conditions Min. | Max. | Min. | Max. Collector-base Viarjceo | ~300} | -200) j| V Io = -100 vA breakdown voltage i= Collector-emitter Vierjceo | ~300; | -200}| | V Ip = -1 mA* breakdown voltage ig =0 Emitter-base VipryEBO 5 _ 5 _ Vv le =-10 uA breakdown voltage Ic=0 Collector cut-off leso |-0.25; | pA Veg = 200V current lp = _ _ ~~ 0.25 pA cs = =1 60V le = 0 Emitter cut-off current} lego _ -0.1 -0.1 | uA Veo 373V c= Collector-emitter VcE(sat) _ -0.5 _ 0.4) V lo = -20 mA saturation voltage Ig = -2mA Collector-base VeE(sat) -09 | 0.9 | V Io = -20 mA saturation voltage Ig = 2mA Static hee 25 _ 25 Ic =-1 mA forward current Voe = -10V" transfer ratio 40 40 Ic = -10 mA Vee = -1 OV . 25 30 150 Ic = -30 mA Vee = -1 OV * Transition frequency fr 50 _ 50 _ MHz | Ile = ~-10mA Voge = -20V f = 20 MHz Output capacitance Cone _ 6 _ 8 pF Ver == 20V == 1 MHz Measured under pulsed conditions. Pulse width = 300 us, Duty Cycle = 2%. SE20MPSA92/93 SAFE OPERATING AREA Collector Current I 10 100 1000 Collector-Emitter Voltage Voce (Volts) TYPICAL CHARACTERISTICS Tamb=25C Tamb =25C Veg 10 {MHz) oF 1 100 on 10 100 Collector Current [, (ma) Collector Current I. (ma) Tamb= 25C toe 510 Ip Veusan tvaltes 1.0 Conlector Current I (mA) SE21