Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3 1Publication Order Number:
BC846BPDW1T1/D
BC846BPDW1T1,
BC847BPDW1T1 Series,
BC848CPDW1T1 Series
Dual General Purpose
Transistors
NPN/PNP Duals (Complimentary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
•Pb−Free Package is Available
MAXIMUM RATINGS − NPN
Rating Symbol Value Unit
Collector-Emitter Voltage BC846
BC847
BC848
VCEO 65
45
30
V
Collector-Base Voltage BC846
BC847
BC848
VCBO 80
50
30
V
Emitter−Base Voltage VEBO 6.0 V
Collector Current − Continuous IC100 mAdc
MAXIMUM RATINGS − PNP
Rating Symbol Value Unit
Collector-Emitter Voltage BC846
BC847
BC848
VCEO −65
−45
−30
V
Collector-Base Voltage BC846
BC847
BC848
VCBO −80
−50
−30
V
Emitter−Base Voltage VEBO −5.0 V
Collector Current − Continuous IC−100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
Per Device
FR−5 Board (Note 1) TA = 25°C
Derate above 25°C
PD380
250
3.0
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 328 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
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SOT−363
CASE 419B
STYLE 1
MARKING
DIAGRAM
Q1
(1)(2)
(3)
(4) (5) (6)
Q2
xx = Device Code
d = Date Code
XXd
1
6
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device Package Shipping†
ORDERING INFORMATION
BC846BPDW1T1 SOT−363 3000 Units/Reel
BC847BPDW1T1 SOT−363 3000 Units/Reel
BC847CPDW1T1 SOT−363 3000 Units/Reel
BC848CPDW1T1 SOT−363 3000 Units/Reel
BC847BPDW1T1G SOT−363
(Pb−Free) 3000 Units/Reel
BB
BF
BG
BL
BF
Mark
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
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2
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mA) BC846 Series
BC847 Series
BC848 Series
V(BR)CEO 65
45
30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage
(IC = 10 A, VEB = 0) BC846 Series
BC847B Only
BC848 Series
V(BR)CES 80
50
30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage
(IC = 10 A) BC846 Series
BC847 Series
BC848 Series
V(BR)CBO 80
50
30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage
(IE = 1.0 A) BC846 Series
BC847 Series
BC848 Series
V(BR)EBO 6.0
6.0
5.0
−
−
−
−
−
−
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C) ICBO −
−−
−15
5.0 nA
A
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V) BC846B, BC847B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V) BC846B, BC847B
BC847C, BC848C
hFE −
−
200
420
150
270
290
520
−
−
475
800
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) −
−−
−0.25
0.6 V
Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base−Emitter Saturation Voltage (IC = 100 mA, I B = 5.0 mA) VBE(sat) −
−0.7
0.9 −
−V
Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580
−660
−700
770 mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
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3
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mA) BC846 Series
BC847 Series
BC848 Series
V(BR)CEO −65
−45
−30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage
(IC = −10 A, VEB = 0) BC846 Series
BC847 Series
BC848 Series
V(BR)CES −80
−50
−30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage
(IC = −10 A) BC846 Series
BC847 Series
BC848 Series
V(BR)CBO −80
−50
−30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage
(IE = −1.0 A) BC846 Series
BC847 Series
BC848 Series
V(BR)EBO −5.0
−5.0
−5.0
−
−
−
−
−
−
V
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO −
−−
−−15
−4.0 nA
A
ON CHARACTERISTICS
DC Current Gain
(IC = −10 A, VCE = −5.0 V) BC846B, BC847B
BC847C, BC848C
(IC = −2.0 mA, VCE = −5.0 V) BC846B, BC847B
BC847C, BC848C
hFE −
−
200
420
150
270
290
520
−
−
475
800
−
Collector−Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat) −
−−
−−0.3
−0.65
V
Base−Emitter Saturation V oltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat) −
−−0.7
−0.9 −
−
V
Base−Emitter On V oltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on) −0.6
−−
−−0.75
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
NF − − 10 dB
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
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4
TYPICAL NPN CHARACTERISTICS − BC846
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
IC, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1 1.0 10 100
0.2
0.2
0.5
0.2 1.0 10 200
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = 5 V
TA = 25°C
00.5 2.0 5.0 20 50 100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
−1.4
−1.8
−2.2
−2.6
−3.0
0.5 5.0 20 50 100
−55°C to 125°C
VB for VBE
Figure 5. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 6. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25°C
Cob
Cib
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
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5
TYPICAL PNP CHARACTERISTICS — BC846
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
−0.8
−1.0
−0.6
−0.2
−0.4
1.0
2.0
−0.1 −1.0 −10 −200
−0.2
0.2
0.5
−0.2 −1.0 −10 −200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = −5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−1.0
−1.2
−1.6
−2.0
−0.02 −1.0 −10
0−20
−0.1
−0.4
−0.8
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
−0.2 −2.0 −10 −200
−1.0
TJ = 25°C
IC =
−10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = −5.0 V
TA = 25°C
0−0.5 −2.0 −5.0 −20 −50 −100
−0.05 −0.2 −0.5 −2.0 −5.0
−100 mA
−20 mA
−1.4
−1.8
−2.2
−2.6
−3.0
−0.5 −5.0 −20 −50 −100
−55°C to 125°C
VB for VBE
−2.0 −5.0 −20 −50 −100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
−0.1 −0.2 −1.0 −50
2.0 −2.0 −10 −100
100
200
500
50
20
20
10
6.0
4.0
−1.0 −10 −100
VCE = −5.0 V
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT
T
−0.5 −5.0 −20
TJ = 25°C
Cob
Cib
8.0
−50 mA −200 mA
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
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6
TYPICAL NPN CHARACTERISTICS − BC847 SERIES & BC848 SERIES
Figure 13. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 14. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2 0.5 1.0 10 20 50
0.2 100
Figure 15. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 16. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
2.0 5.0 200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
0.2 1.0 10 100
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25°C
−55°C to +125°C
TA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 17. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 18. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
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7
TYPICAL PNP CHARACTERISTICS — BC847 SERIES & BC848 SERIES
Figure 19. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 20. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
−0.2
0.2
Figure 21. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
−0.6
−0.7
−0.8
−0.9
−1.0
−0.5
0
−0.2
−0.4
−0.1
−0.3
1.6
1.2
2.0
2.8
2.4
−1.2
−1.6
−2.0
−0.02 −1.0 −10
0−20
−0.1
−0.4
−0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.7
0.5
0.3
−0.2 −10 −100
−1.0
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = −10 V
VCE = −10 V
TA = 25°C
−55°C to +125°C
IC = −100 mA
IC = −20 mA
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
IC = −200 mAIC = −50 mAIC =
−10 mA
Figure 23. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 24. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
−0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
−0.5
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
T
TA = 25°C
Cob
Cib
−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40
150
−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50
VCE = −10 V
TA = 25°C
TA = 25°C
1.0
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
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8
Figure 25. Thermal Response
Figure 26. Active Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
−200
−1.0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
−100
−50
−10
−5.0
−2.0
−5.0 −10 −30 −45 −65 −100
1 s
BC558
BC557
BC556
The safe operating area curves indicate IC−VCE lim-
its of the transistor that must be observed for reliable op-
eration. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 26 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in Figure
25. At high case or ambient temperatures, thermal limita-
tions will reduce the power that can be handled to values
less than the limitations imposed by the secondary break-
down.
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
1.00
RESISTANCE (NORMALIZED)
0.1
0.01
0.001
10 100 1.0k 10k 100k
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
ZJA(t) = r(t) RJA
RJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
1.0M
0.02
0.01
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
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9
PACKAGE DIMENSIONS
SOT−363/SC−88
CASE 419B−02
ISSUE U
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
DIM
AMIN MAX MIN MAX
MILLIMETERS
1.80 2.200.071 0.087
INCHES
B1.15 1.350.045 0.053
C0.80 1.100.031 0.043
D0.10 0.300.004 0.012
G0.65 BSC0.026 BSC
H−−− 0.10−−−0.004
J0.10 0.250.004 0.010
K0.10 0.300.004 0.012
N0.20 REF0.008 REF
S2.00 2.200.079 0.087
B0.2 (0.008) MM
123
A
G
S
H
C
N
J
K
654
−B−
D6 PL
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
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