© 1996
PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
Document No. P10968EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
DESCRIPTION
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator
applications and so on.
NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• Class A operation
• High power output
• High reliability
SELECTION CHART
PERFORMANCE SPECIFIED
PART NUMBER FORM Pout (**)GL (**) USABLE
(dBm) (dB) FREQUENCY
(GHz)
NE8500100(*) chip 28.5 min 9.0 typ 2.0 to 10
NE8500100-WB
NE8500100-RG
NE8500199 package 28.5 min 9.0 typ 2.0 to 10
*WB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,: gel-pack,
** Specified at the condition at the last page.
PHYSICAL DIMENSIONS
NE8500100 (CHIP) (unit:
µ
m)
PACKAGE CODE-99 (unit: mm)
4.0 MIN BOTH LEADS
SOURCE GATE
DRAIN
0.6 ±0.1
5.2 ±0.3
6.0 ±0.2
11.0 ±0.3
15.0 ±0.3
0.1
1.2
0.2 MAX.
1.0 ±0.1
2.2 ±0.3
2 PLACES
φ
4.3 ±0.2
1.7 ±0.15
4.0
5.0 MAX.
780
640
170
100
146
100
65
100
NE85001 SERIES
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ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSX 15 V
Gate to Drain Voltage VGDX –18 V
Gate to Source Voltage VGSX –12 V
Total Power Disipation(*) PT6.0 W
Drain Current ID1.12 A
Gate Current IG6.0 mA
Channel Temperature Tch 175 ˚C
Storage Temperature Tstg –65 to 175 ˚C
*TC = 25 ˚C
RECOMMENDING OPERATION RANDGE
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Drain to Source Voltage VDS 9–10V
Channel Temperature Tch – – 130 ˚C
Input Power Gcomp – – 3 dBcomp
Gate Resistance Rg – – 1 kΩ
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Saturated Drain Current Idss 430 – 860 mA Vds = 2.5 V, Vgs = 0 V
Pinch-off Voltage VP–3.0 – –1.0 V Vds = 2.5 V, Ids = 4 mA
Transconductance gm – 300 – mS Vds = 2.5 V, Ids = Idss
Thermal Resistance Rth – – 30 ˚C/W
PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)
PART NUMBER
PACKAGE CODE
CHARACTERISTIC SYMBOL
Output Power PO
Gate to source Igs
Current
Linear Gain GL
*Pin for Pout specification.
** The same conditions as the above except this.
NE8500100
NE8500100-WG
NE8500100-RG
CHIP
MIN. TYP. MAX.
28.5 – –
–2.0 – 2.0
–9–
NE8500199
99
MIN. TYP. MAX.
28.5 – –
–2.0 – 2.0
–9–
UNIT
dBm
mA
dB
TEST CONDITIONS
Pin ≤ 11 dBm (**)
f = 7.2 GHz
Vds = 10 V
Ids = 200 mA set
Rg = 1 kΩ
Pin = 21.0 dBm(*)
NE85001 SERIES
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TYPICAL CHARACTERISTICS (TA = 25 ˚C)
NE8500199
OUTPUT POWER vs. INPUT POWER
P
out
- Output Power - dBm
10 P
in
- Input Power - dBm
25
20
15
30
15 20
300
250
200 I
D
(mA)
V
DS
= 10 V
I
ds
= 200 mA set
f = 7.2 GHz
NE85001 SERIES
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S-PARAMETER
VDS = 10 V, IDS = 200 mA, VGS = –1.260 V, IG = 0.0 mA, RG = 1 kΩ
FREQUENCY
S11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.100 0.990 –22.7 14.418 165.5 0.007 70.1 0.065 –64.6
0.500 0.916 –91.1 10.211 123.3 0.024 47.7 0.175 –126.4
1.000 0.869 –132.1 6.444 94.8 0.031 33.6 0.221 –149.1
1.500 0.851 –152.9 4.610 76.6 0.034 29.0 0.241 –159.2
2.000 0.840 –166.1 3.591 61.9 0.038 28.1 0.260 –165.6
2.500 0.831 –175.9 2.975 49.1 0.042 26.7 0.278 –170.8
3.000 0.826 176.0 2.601 37.3 0.047 25.4 0.296 –174.6
3.500 0.824 168.8 2.341 26.0 0.053 27.4 0.313 –177.8
3.600 0.825 167.5 2.291 23.4 0.055 27.0 0.317 –179.2
3.700 0.825 166.0 2.253 20.7 0.056 26.5 0.323 179.8
3.800 0.827 164.4 2.230 18.1 0.059 26.8 0.333 179.4
3.900 0.829 162.8 2.187 16.1 0.063 26.5 0.340 178.7
4.000 0.829 161.0 2.127 13.4 0.066 25.4 0.345 176.3
4.200 0.821 157.2 2.053 8.6 0.072 20.1 0.353 171.0
4.400 0.808 153.9 1.976 5.6 0.074 16.8 0.343 167.3
4.500 0.803 152.5 1.963 3.4 0.075 15.2 0.337 166.2
4.600 0.799 151.0 1.970 0.8 0.077 13.9 0.340 164.8
4.800 0.790 147.9 1.944 –3.1 0.080 12.6 0.341 163.2
5.000 0.784 144.7 1.929 –8.6 0.084 9.3 0.340 159.8
5.200 0.777 141.4 1.923 –12.8 0.089 7.4 0.349 158.6
5.400 0.771 137.7 1.897 –18.5 0.093 4.5 0.347 155.6
5.500 0.767 135.9 1.916 –20.7 0.097 3.1 0.358 154.2
5.600 0.764 133.9 1.916 –22.7 0.100 1.8 0.363 154.5
5.800 0.758 130.1 1.887 –28.5 0.105 –1.9 0.358 151.6
6.000 0.751 125.8 1.928 –33.5 0.113 –4.8 0.381 149.5
6.200 0.742 121.3 1.896 –39.1 0.116 –8.0 0.369 146.8
6.400 0.731 116.6 1.951 –44.8 0.126 –11.6 0.397 144.2
6.500 0.726 114.1 1.951 –47.2 0.130 –13.2 0.396 144.2
6.600 0.721 111.6 1.936 –50.6 0.133 –15.9 0.387 141.8
6.800 0.707 106.1 1.973 –56.8 0.143 –20.4 0.411 138.6
7.000 0.689 100.2 1.957 –62.4 0.149 –23.9 0.402 137.1
7.200 0.676 93.9 2.004 –69.1 0.163 –28.9 0.424 133.8
7.400 0.657 87.1 2.002 –74.9 0.171 –33.3 0.425 132.3
7.500 0.649 83.4 2.013 –78.8 0.177 –36.8 0.431 129.4
7.600 0.640 79.9 2.045 –82.4 0.185 –39.6 0.448 127.2
7.800 0.621 71.8 2.042 –88.6 0.195 –45.0 0.452 123.8
8.000 0.604 63.2 2.067 –96.6 0.206 –51.8 0.465 117.2
8.200 0.590 53.4 2.078 –103.5 0.216 –57.8 0.478 112.7
8.400 0.584 42.7 2.088 –112.0 0.227 –65.4 0.492 104.8
8.500 0.577 37.0 2.102 –115.5 0.232 –68.0 0.500 102.7
8.600 0.574 31.2 2.083 –119.1 0.237 –71.2 0.501 100.1
8.800 0.570 18.8 2.088 –127.8 0.246 –78.3 0.519 93.0
9.000 0.571 5.9 2.072 –135.7 0.253 –84.7 0.534 87.2
9.200 0.583 –7.6 2.044 –144.6 0.264 –92.3 0.545 80.1
9.400 0.599 –21.4 2.040 –153.1 0.274 –99.3 0.568 73.6
9.500 0.611 –28.5 2.030 –157.9 0.277 –103.2 0.577 69.7
9.600 0.619 –35.9 2.008 –162.9 0.281 –107.4 0.583 65.8
9.800 0.631 –50.4 1.943 –173.2 0.284 –115.9 0.600 56.3
10.000 0.631 –62.9 1.812 177.3 0.280 –123.6 0.587 47.0
NE85001 SERIES
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CHIP HANDLING
DIE ATTACHMENT
Die attach can be accomplished with a Au-Sn (300 ±10 ˚C) performs in a forming gas environment. Epoxy die
attach is not recommended.
BONDING
Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 - 8 % elongation) 30 microns or
less in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %.
Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be
kept within a 280 ˚C _ 5 minute curve. If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment.
The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean
environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static
discharge.
2
NE85001 SERIES
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11