W9825G6DH
4M × 4 BANKS × 16 BITS SDRAM
Publication Release Date: Nov. 14 , 2007
- 1 - Revision A11
Table of Contents-
1. GENERAL DESCRIPTION......................................................................................................... 3
2. FEATURES................................................................................................................................. 3
3. AVAILABLE PART NUMBER...................................................................................................... 4
4. PIN CONFIGURATION............................................................................................................... 4
5. PIN DESCRIPTION..................................................................................................................... 5
6. BLOCK DIAGRAM...................................................................................................................... 6
7. FUNCTIONAL DESCRIPTION .................................................................................................... 7
7.1 Power Up and Initialization............................................................................................. 7
7.2 Programming Mode Register.......................................................................................... 7
7.3 Bank Activate Command................................................................................................ 7
7.4 Read and Write Access Modes ...................................................................................... 7
7.5 Burst Read Command.................................................................................................... 8
7.6 Burst Write Command .................................................................................................... 8
7.7 Read Interrupted by a Read ........................................................................................... 8
7.8 Read Interrupted by a Write............................................................................................ 8
7.9 Write Interrupted by a Write............................................................................................ 8
7.10 Write Interrupted by a Read............................................................................................ 8
7.11 Burst Stop Command ..................................................................................................... 8
7.12 Addressing Seque nce of Sequential Mode .................................................................... 9
7.13 Addressing Seque nce of Interleave Mode...................................................................... 9
7.14 Auto-precharge Command ........................................................................................... 10
7.15 Precharge Command.................................................................................................... 10
7.16 Self Refresh Command ................................................................................................ 10
7.17 Power Down Mode ....................................................................................................... 11
7.18 No Operation Command............................................................................................... 11
7.19 Deselect Command...................................................................................................... 11
7.20 Clock Suspend Mode.................................................................................................... 11
8. OPERATION MODE................................................................................................................. 12
9. ELECTRICAL CHARAC TERISTICS......................................................................................... 13
9.1 Absolute Maximum Ratings.......................................................................................... 13
9.2 Recommended DC Opera ting Conditions.................................................................... 13
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 2 - Revision A11
9.3 Capacitance.................................................................................................................. 13
9.4 DC Characteristics........................................................................................................ 14
9.5 AC Characteristics and Op erating Condition................................................................ 15
10. TIMING WAVEFORMS............................................................................................................. 18
10.1 Command Input Timing ................................................................................................ 18
10.2 Read Timing.................................................................................................................. 19
10.3 Control Timing of Input/Output Data............................................................................. 20
10.4 Mode Regist er Set Cycle.............................................................................................. 21
11. OPERATING TIMING EXAMPLE............................................................................................. 22
11.1 Interleaved Bank Read (Burst Le ngth = 4, CAS Latency = 3)...................................... 22
11.2 Interleaved Bank Read (Burst Le ngth = 4, CAS Latency = 3, Auto-precharge)........... 23
11.3 Interleaved Bank Read (Burst Le ngth = 8, CAS Latency = 3)...................................... 24
11.4 Interleaved Bank Read (Burst Le ngth = 8, CAS Latency = 3, Auto-precharge)........... 25
11.5 Interleaved Bank Write (B urst Length = 8) ................................................................... 26
11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 27
11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3)............................................... 28
11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3)................................... 29
11.9 Auto-prechar ge Read (Burst Length = 4, CAS Latency = 3)........................................ 30
11.10 Auto-precharge Write (Burst Length = 4).................................................................... 31
11.11 Auto Refresh Cycle ..................................................................................................... 32
11.12 Self Refresh Cycle....................................................................................................... 33
11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)............................ 34
11.14 Power Down Mode...................................................................................................... 35
11.15 Auto-precharge Timing (Read Cycle).......................................................................... 36
11.16 Auto-precharge Timing (Write Cycle).......................................................................... 37
11.17 Timing Chart of Read to Write Cycle........................................................................... 38
11.18 Timing Chart of Write to Read Cycle........................................................................... 38
11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command).......................................... 39
11.20 Timing Chart of Burst Stop Cycle (Precharge Command).......................................... 39
11.21 CKE/DQM Input Timing (Write Cycle)......................................................................... 40
11.22 CKE/DQM Input Timing (Read Cycle)......................................................................... 41
12. PACKAGE SPECIFICATION.................................................................................................... 42
12.1 54L TSOP II - 400 mil................................................................................................... 42
13. REVISION HISTORY................................................................................................................ 43
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 3 - Revision A11
1. GENERAL DESCRIPTION
W9825G6DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
4M words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology,
W9825G6DH delivers a data bandwidth of up to 166M words per second (-6). To fully comply with the
personal computer industrial standard, W9825G6DH is sorted into the following speed grades: -6/-6C/-
6I and -75/75I. The - 6 is compliant to the 166MHz/CL3 or 133MHz/CL2 specification. The – 6C is
compliant to the 166MHz/CL3 specification. The -6I is compliant to the 166MHz/CL3 specification (the
-6I grade which is guaranteed to support -40°C ~ 85°C). The -75/75I is compliant to the 133MHz/CL3
specification (the 75I grade which is guaranteed to support -40°C ~ 85°C).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleavin g among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9825G6DH is ideal for main memory in
high performance applications.
2. FEATURES
• 3.3V ± 0.3V Power Supply
• Up to 166 MHz Clock F requency
• 4,194,304 Words × 4 Ban ks × 16 Bits Organization
• Self Refresh Mode: Standard and Lo w Power
• CAS Latency: 2 and 3
• Burst Length: 1, 2, 4, 8 and Full Page
• Burst Read, Single Writes Mode
• Byte Data Controlled by LDQM, UDQM
• Power Down Mode
• Auto-precharge and Controlled Precharge
• 8K Refresh Cycles/64 mS
• Interface: LVTTL
• Packaged in TSOP II 54-pin, 400 mil - 0.80, using Pb free with Ro HS compliant
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 4 - Revision A11
3. AVAILABLE PART NUMBER
PART NUMBER SPEED
GRADE SELF REFRESH
CURRENT (MAX) OPERATING
TEMPERATURE
W9825G6DH-6 166MHz/CL3
or
133MHz/CL2 3mA 0°C ~ 70°C
W9825G6DH-6C 166MHz/CL3 3mA 0°C ~ 70°C
W9825G6DH-6I 166MHz/CL3 3mA -40°C ~ 85°C
W9825G6DH-75 133MHz/CL3 3mA 0°C ~ 70°C
W9825G6DH75I 133MHz/CL3 3mA -40°C ~ 85°C
4. PIN CONFIGURATION
VSS
DQ15
VSSQ
DQ14
DQ13
VCCQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VCCQ
DQ8
VSS
NC
UDQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
VCC
DQ0
VCCQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VCCQ
DQ5
DQ6
VSSQ
DQ7
VCC
LDQM
BS0
BS1
A10/AP
A0
A1
A2
A3
VCC
CS
RAS
CAS
WE
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 5 - Revision A11
5. PIN DESCRIPTION
PIN NUMBER PIN NAME FUNCTION DESCRIPTION
23−26, 22,
29−36 A0−A12 Address Multiplexed pins for row and column address.
Row address: A0−A12. Column ad dress: A0−A8.
20, 21 BS0, BS1 Bank Select Select bank to activate during row address latch time, or
bank to read/write during address latch time.
2, 4, 5, 7, 8, 10,
11, 13, 42, 44,
45, 47, 48, 50,
51, 53 DQ0−DQ15 Data
Input/Output Multiplexed pins for data output and input.
19 CS Chip Select Disable or enable the command decode r. When
command decoder is disabled, new command is
ignored and previous op eration continues.
18 RAS Row Address
Strobe
Command input. When sampled at the rising edge of
the clock, RAS , CAS and WE define the operation
to be executed.
17 CAS Column
Address
Strobe Referred to RAS
16 WE Write Enable Referred to RAS
15, 39 LDQM,
UDQM Input/Output
Mask
The output buffer is placed at Hi-Z(with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write operation
with zero latency.
38 CLK Clock Inputs System clock used to sample inputs on the rising edge
of clock.
37 CKE Clock Enable
CKE controls the clock acti vation and deactivation.
When CKE is low, Power Down mode, Suspend mode,
or Self Refresh mode is entered.
1, 14, 27 VCC Power (+3.3V) Power for input buffers and logic circuit inside DRAM.
28, 41, 54 VSS Ground Ground for input buffers and logic circuit inside DRAM.
3, 9, 43, 49 VCCQ Power (+3.3V)
for I/O Buffer Separated power from VCC, to improve DQ noise
immunity.
6, 12, 46, 52 VSSQ Ground
for I/O Buffer Separated ground from VSS, to improve DQ noise
immunity.
40 NC No Connection No connection. (NC pin should be con nected to GND
or floating)
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 6 - Revision A11
6. BLOCK DIAGRAM
DQ0
DQ15
LDQM
UDQM
CLK
CKE
CS
RAS
CAS
WE
A10
A0
A9
A11
A12
BS0
BS1
CLOCK
BUFFER
COMMAND
DECODER
ADDRESS
BUFFER
REFRESH
COUNTER COLUMN
COUNTER
CONTROL
SIGNAL
GENERATOR
MODE
REGISTER
COLUMN DECODER
SENSE AMPLIFIER
CE LL A RRA Y
B ANK #2
COLUMN DECODER
SENSE AMPLIFIER
CEL L ARR AY
BA NK # 0
COLUMN DECODER
SENSE AMPLIFIER
CE LL A RRA Y
B ANK #3
DATA CO NT R OL
CIRCUIT DQ
BUFFER
COLUMN DECODER
SENSE AMPLIFIER
CEL L A RRA Y
BA NK #1
Note: The cell array configuration is 8192 * 512 * 16.
ROW DECODER ROW DECODER
ROW DECODERROW DECODER
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 7 - Revision A11
7. FUNCTIONAL DESCRIPTION
7.1 Power Up and Initialization
The default power up state of the mode register is unspecified. The following power up and
initialization sequence need to be followed to guarantee the device being preconditioned to each user
specific needs.
During power up, all Vcc and VccQ pins must be ram p up simultaneously to the specified voltage when
the input signals are held in the "NOP" state. The power up voltage must not exceed Vcc + 0.3V on
any of the input pins or Vcc supplies. After power up, an initial pause of 200 µS is required followed by
a precharge of all banks using the precharge command. To prevent data contention on the DQ bus
during power up, it is required that the DQM and CKE pins be held high during the initial pause period.
Once all banks have been precharged, the Mode Register Set Command must be issued to initialize
the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required before or after
programming the Mode Register to ensure proper subsequent operation.
7.2 Programming Mode Register
After initial power up, the Mode Register Set Command must be issued for proper device operation.
All banks must be in a precharged state and CKE must be high at least one cycle before the Mode
Register Set Command can be issued. The Mode Register Set Command is activated by the low
signals of RAS , CAS, CS and WE at the positive edge of the clock. The address input data
during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A
new command may be issued following the mode register set command once a delay equal to tRSC has
elapsed. Please refer to the next page for Mode Regi ster Set Cycle and Operation Table.
7.3 Bank Activate Command
The Bank Activate command must be applied before any Read or Write operation can be executed.
The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate
command is applied to when the first read or write operation can begin must not be less than the RAS
to CAS delay time (tRCD). Once a bank has been activated it must be precharged before another Bank
Activate command can be issued to the same bank. The minimum time interval between successive
Bank Activate commands to the same bank is determined by the RAS cycle time of the device (tRC).
The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice
versa) is the Bank to Bank delay time (tRRD). The maximum time that each bank can be held active is
specified as tRAS (max).
7.4 Read and Write Access Modes
After a bank has been activated , a read or write cycle can be followed. This is accomplished by
setting RAS high and CAS low at the clock rising edge after minimum of tRCD delay. WE pin
voltage level defines whether the access cycle is a read operation (WE high), or a write operation
(WE low). The address inputs determine the starting column address.
Reading or writing to a different row within an activated bank requires the bank be precharged and a
new Bank Activate command be issued. When more than one bank is activated, interleaved bank
Read or Write operations are possible. By using the programmed burst length and alternating the
access and precharge operations between multiple banks, seamless data access operation among
many different pages can be realized. Read or Write Commands can also be issued to the same bank
or between active banks on every clock cycle.
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 8 - Revision A11
7.5 Burst Read Command
The Burst Read command is initiated by applying logic low level to CS and CAS while holding
RAS and WE high at the rising edge of the clock. The address inputs determine the starting
column address for the burst. The Mode Register sets type of burst (sequential or interleave) and the
burst length (1, 2, 4, 8 and full page) during the Mode Register Set Up cycle. Table 2 and 3 in the next
page explain the addre ss sequence of interleave mode and sequential mode.
7.6 Burst Write Command
The Burst Write command is initiated by applying logic low level to CS , CAS and WE while
holding RAS high at the rising edge of the clock. The address inputs determine the starting column
address. Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle
that the Write Command is issued. The remaining data inputs must be supplied on each subsequent
rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes
will be ignored.
7.7 Read Interrupted by a Read
A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted,
the remaining addresses are overridden by the new read address with the full burst length. The data
from the first Read Command continues to appear on the outputs until the CAS Latency from the
interrupting Read Command the is satisfied.
7.8 Read Interrupted by a Write
To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output
drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will
issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the
DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM
masking is no longer needed.
7.9 Write Interrupted by a Write
A burst write may be interrupted before completion of the burst by another Write Command. When the
previous burst is interrupted, the remaining addresses are overridden by the new address and data
will be written into the device until the programmed burst length is satisfied.
7.10 Write Interrupted by a Read
A Read Command will interrupt a burst write operation on the same clock cycle that the Read
Command is activated. The DQs must be in the high impedance state at least one cycle before the
new read data appears on the outputs to avoid data contention. When the Read Command is
activated, any residual data from the burst write cycle will be ignored.
7.11 Burst Stop Command
A Burst Stop Command may be used to terminate the existing burst operation but leave the bank open
for future Read or Write Commands to the same page of the active bank. The Burst Stop Command is
defined by having RAS and CAS high with CS and WE low at the rising edge of the clock. The
data DQs go to a high impedance state after a delay which is equal to the CAS Latency in a burst read
cycle interrupted by Burst Stop.
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 9 - Revision A11
7.12 Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to
the device. The disturb address is varied by the Burst Length as shown in Table 2.
Table 2 Address Sequence of Sequential Mode
DATA ACCESS ADDRESS BURST LENGTH
Data 0 n BL = 2 (disturb address is A0)
Data 1 n + 1 No address carry from A0 to A1
Data 2 n + 2 BL = 4 (disturb addresses are A0 and A1)
Data 3 n + 3 No address carry from A1 to A2
Data 4 n + 4
Data 5 n + 5 BL = 8 (disturb addresses are A0, A1 and A2)
Data 6 n + 6 No address carry from A2 to A3
Data 7 n + 7
7.13 Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit
in the sequence shown in Table 3.
Table 3 Address Sequence of Interle ave Mode
DATA ACCESS ADDRESS BURST LENGTH
Data 0 A8 A7 A6 A5 A4 A3 A2 A1 A0 BL = 2
Data 1 A8 A7 A6 A5 A4 A3 A2 A1
A
0
Data 2 A8 A7 A6 A5 A4 A3 A2
A
1 A0 BL = 4
Data 3 A8 A7 A6 A5 A4 A3 A2
A
1
A
0
Data 4 A8 A7 A6 A5 A4 A3
A
2 A1 A0 BL = 8
Data 5 A8 A7 A6 A5 A4 A3
A
2 A1
A
0
Data 6 A8 A7 A6 A5 A4 A3
A
2
A
1 A0
Data 7 A8 A7 A6 A5 A4 A3
A
2
A
1
A
0
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 10 - Revision A11
7.14 Auto-precharge Command
If A10 is set to high when the Read or Write Command is issued, then the Auto-precharge function is
entered. During Auto-precharge, a Read Command will execute as normal with the exception that the
active bank will begin to precharge automatically before all burst read cycles have been completed.
Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled
burst cycle. The number of clocks is determined by CAS Latency.
A Read or Write Command with Auto-precharge can not be interrupted before the entire burst
operation is completed. Therefore, use of a Read, Write, or Precharge Command is prohibited during
a read or write cycle with Auto-precharge. Once the precharge operation has started, the bank cannot
be reactivated until the Precharge time (tRP) has been satisfied. Issue of Auto-pecharge command is
illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write
with Auto-pecharge function is initiated. The SDRAM automatically enters the precharge operation two
clock delay from the last burst write cycle. This delay is referred to as Write tWR. The bank undergoing
Auto-precharge can not be reactivated until tWR and tRP are satisfied. This is referred to as tDAL, Data-in
to Active delay (tDAL = tWR + tRP). When using the Auto-precharge Command, the interval between the
Bank Activate Command and the beginn ing of the internal precharge operation must sati sfy tRAS (min).
7.15 Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The
Precharge Command is entered when CS, RAS and WE are low and CAS is high at the rising
edge of the clock. The Precharge Command can be used to precharge each bank separately or all
banks simultaneously. Three address bits A10, BS0 and BS1 are used to define which bank(s) is to be
precharged when the command is issued. After the Precharge Command is issued, the precharged
bank must be reactivated before a new read or write access can be executed. The delay between the
Precharge Command and the Activate Command must be greater than or equal to the Precharge time
(tRP).
7.16 Self Refresh Command
The Self Refresh Command is defined by having CS, RAS , CAS and CKE held low with WE
high at the rising edge of the clock. All banks must be idle prior to issuing the Self Refresh Command.
Once the command is registered, CKE must be held low to keep the device in Self Refresh mode.
When the SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are
disabled. The clock is internally disabled during Self Refresh Operation to save power. The device will
exit Self Refresh operation after CKE is returned high. A minimum delay time is required when the
device exits Self Refresh Operation and before the next command can be issued. This delay is equal
to the tAC cycle time plus the Self Refresh exit time.
If, during normal operation, AUTO REFRESH cycles are issued in bursts (as opposed to being evenly
distributed), a burst of 8,192 AUTO REFRESH cycles should be completed just prior to entering and
just after exiting the self refresh mode. The period between the Auto Refresh command and the next
command is specified by tRC.
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 11 - Revision A11
7.17 Power Down Mode
The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are
gated off to reduce the power. The Power Down mode does not perform any refresh operations,
therefore the device can not remain in Power Down mode longer than the Refresh period (tREF) of the
device.
The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation
Command is required on the next rising clock edge, depending on tCK. The input buffers need to be
enabled with CKE held high for a period equal to tCKS (min) + tCK (min).
7.18 No Operation Command
The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state to
prevent the SDRAM from registering any unwanted commands between operations. A No Operation
Command is registered when CS is low with RAS , CAS and WE held high at the rising edge of
the clock. A No Operation Command will not terminate a previous operation that is still executing, such
as a burst read or write cycle.
7.19 Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect
Command occurs when CS is brought high, the RAS , CAS and WE signals become don't
cares.
7.20 Clock Suspend Mode
During normal access mode, CKE must be held high enabling the clock. When CKE is registered low
while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Suspend mode
deactivates the internal clock and suspends any clocked operation that was currently being executed.
There is a one clock delay between the registration of CKE low and the time at which the SDRAM
operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are
issued. The Clock Suspend mode is exited by bringing CKE high. There is a one clock cycle delay
from when CKE returns high to when Clock Suspend mode is exited.
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 12 - Revision A11
8. OPERATION MODE
Fully synchronous operations are performed to latch the commands at the positive edges of CLK.
Table 1 shows the truth table for the operation commands.
Table 1 Truth Table (Note (1) , (2))
COMMAND DEICE
STATE CKEn-1 CKEn DQM BS0, 1 A10 A0−A9
A11, A12 CS RAS CAS WE
Bank Active Idle H x x v v v L L H H
Bank Precharge Any H x x v L x L L H L
Precharge All Any H x x x H x L L H L
Write Active (3) H x x v L v L H L L
Write with Auto-
precharge Active (3) H x x v H v L H L L
Read Active (3) H x x v L v L H L H
Read with Auto-
precharge Active (3) H x x v H v L H L H
Mode Register Set Idle H x x v v v L L L L
No-operation Any H x x x x x L H H H
Burst Stop Active (4) H x x x x x L H H L
Device Deselect Any H x x x x x H x x x
Auto-refresh Idle H H x x x x L L L H
Self-refresh Entry Idle H L x x x x L L L H
Self-refresh Exit Idle
(S.R.) L
L H
H x
x x
x x
x x
x H
L x
H x
H x
x
Clock Suspend Mode
Entry Active H L x x x x x x x x
Power Down Mode
Entry Idle
Active (5) H
H L
L x
x x
x x
x x
x H
L x
H x
H x
x
Clock Suspend Mode
Exit Active L H x x x x x x x x
Power Down Mode
Exit Any
(Power Down) L
L H
H x
x x
x x
x x
x H
L x
H x
H x
x
Data Write/Output
Enable Active H x L x x x x x x x
Data Write/Output
Disable Active H x H x x x x x x x
Notes:
(1) v = valid x = Don't care L = Low Level H = High Level
(2) CKEn signal is input level when commands are provided.
CKEn-1 signal is the input level one clock cycle before the command is issued.
(3) These are state of bank designated by BS0, BS1 signals.
(4) Device state is full page burst operation.
(5) Power Down Mode can not be entered in the burst cycle.
When this command asserts in the burst cycle, device state is clock suspend mode.
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 13 - Revision A11
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER SYMBOL RATING UNIT NOTES
Input, Output Voltage VIN, VOUT -0.3 ~ VCC + 0.3 V 1
Supply Voltage VCC, VCCQ -0.3 ~ 4.6 V 1
Operating Temperature(-6/-6C/-75) TOPR 0 ~ 70 °C 1
Operating Temperature(-6I/75I) TOPR -40 ~ 85 °C 1
Storage Temperature TSTG -55 ~ 150 °C 1
Soldering Temperature (10s) TSOLDER 250 °C 1
Power Dissipation PD 1 W 1
Short Circuit Output Current IOUT 50 mA 1
Note 1: Exposure to conditions beyond those listed under Absolute Maximum Ratin gs may adversely affect the life and
reliability of the device.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for –6/-6C/-75, TA= -40 to 85°C for -6I/75I)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTES
Supply Voltage VCC 3.0 3.3 3.6 V 2
Supply Voltage (for I/O Buffer) VCCQ 3.0 3.3 3.6 V 2
Input High Voltage VIH 2.0 - VCC + 0.3 V 2
Input Low Voltage VIL -0.3 - 0.8 V 2
Note 2: VIH(max) = VCC/VCCQ+1.2V for pulse width < 5 nS
V
IL(min) = VSS/VSSQ-1.2V for pulse width < 5 nS
9.3 Capacitance
(VCC = 3.3V, f = 1 MHz, TA = 25°C)
PARAMETER SYMBOL MIN. MAX. UNIT
Input Capacitance
(A0 to A12, BS0, BS1, CS, RAS , CAS, WE , LDQM,
UDQM, CKE) CI - 3.8 pf
Input Capacitance (CLK) CCLK - 3.5 pf
Input/Output Capacitance CIO - 6.5 pf
Note: These parameters are periodically sampled and not 100% tested.
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 14 - Revision A11
9.4 DC Characteristics
(VCC = 3.3V ± 0.3V, TA = 0 to 70°C for –6/-6C/-75, TA= -40 to 85°C for -6I/75I)
-6/-6C/-6I -75/75I
PARAMETER SYM. MAX. MAX.
UNIT NOTES
Operating Current
tCK = min., tRC = min.
Active precharge command
cycling without burst operation
1 Bank Operation ICC1 100 90 3
Standby Current
tCK = min, CS = VIH CKE = VIH I
CC2 50 35 3
VIH/L = VIH (min.)/VIL (max.)
Bank: Inactive state CKE = VIL (Power Down mode) I
CC2P 2 2 3
Standby Current
CLK = VIL, CS = VIH CKE = VIH I
CC2S 15 15
VIH/L = VIH (min.)/VIL (max.)
BANK: Inactive state CKE = VIL (Power Down mode) I
CC2PS 2 2 mA
No Operating Current
tCK = min., CS = VIH (min.) CKE = VIH I
CC3 70 55
BANK: Active state
(4 banks) CKE = VIL (Power Down mode) I
CC3P 15 15
Burst Operating Current
tCK = min.
Read/ Write command cycling ICC4 150 130 3, 4
Auto Refresh Current
tCK = min.
Auto refresh command cycling ICC5 200 180 3
Self Refresh Current
Self Refresh Mode
CKE = 0.2V ICC6 3 3
PARAMETER SYMBOL MIN. MAX. UNIT NOTES
Input Leakage Current
(0V ≤ VIN ≤ VCC, all other pins not under test = 0V) II(L) -5 5 µA
Output Leakage Current
(Output disable, 0V ≤ VOUT ≤ VCCQ) IO(L) -5 5 µA
LVTTL Output ″H″ Level Voltage
(IOUT = -2 mA ) VOH 2.4 - V
LVTTL Output ″L″ Level Voltage
(IOUT = 2 mA ) VOL - 0.4 V
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 15 - Revision A11
9.5 AC Characteristics and Operating Condition
(VCC = 3.3V ± 0.3V, TA = 0 to 70°C for -6/-6C/-75, TA= -40 to 85°C for -6I/75I)
-6 -6C -6I
PARAMETER SYM. MIN. MAX. MIN. MAX. MIN. MAX. UNIT NOTES
Ref/Active to Ref/Active Command
Period tRC 60 60 60 nS
Active to precharge Command Period tRAS 42 100000 42 100000 42 100000 nS
Active to Read/Write Command Delay
Time tRCD 15 18 18 nS
Read/Write(a) to Read/Write(b)
Command Period tCCD 1 1 1
tCK
Precharge to Active Command Period tRP 15 18 18 nS
Active(a) to Active(b) Command
Period tRRD 2 2 2
tCK
Write Recovery Time CL* = 2 tWR 2 2 2
tCK
CL* = 3 2 2 2
tCK
CLK Cycle Time CL* = 2 tCK 7.5 1000 10 1000 10 1000
CL* = 3 6 1000 6 1000 6 1000
CLK High Level Width tCH 2 2 2 9
CLK Low Level Width tCL 2 2 2 9
Access Time from
CLK CL* = 2 tAC 6 6 6 10
CL* = 3 5 5 5 10
Output Data Hold Time tOH 3 3 3 10
CL* = 2 tHZ 5.4 5.4 5.4 8
Output Data High
Impedance Time CL* = 3 5.4 5.4 5.4
Output Data Low Impedance Time tLZ 0 0 0 10
Power Down Mode Entry Time tSB 0 7 0 7 0 7 nS
Transition Time of CLK (Rise and Fall) tT 1 1 1 7
Data-in Set-up Time tDS 1.5 1.5 1.5 9
Data-in Hold Time tDH 0.8 0.7 1 9
Address Set-up Time tAS 1.5 1.5 1.5 9
Address Hold Time tAH 0.8 0.7 1 9
CKE Set-up Time tCKS 1.5 1.5 1.5 9
CKE Hold Time tCKH 0.8 0.7 1 9
Command Set-up Time tCMS 1.5 1.5 1.5 9
Command Hold Time tCMH 0.8 0.7 1 9
Refresh Time tREF 64 64 64 mS
Mode register Set Cycle Time tRSC 2 2 2
tCK
Exit self refresh to ACTIVE command tXSR 72 72 72 nS
*CL = CAS Latency
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 16 - Revision A11
-75/75I
PARAMETER SYM.
MIN. MAX.
UNIT NOTES
Ref/Active to Ref/Active Command Period tRC 65 nS
Active to precharge Command Period tRAS 45 100000 nS
Active to Read/Write Command Delay Time tRCD 20 nS
Read/Write(a) to Read/Write(b) Command Period tCCD 1
tCK
Precharge to Active Command Period tRP 20 nS
Active(a) to Active(b) Command Period tRRD 2
tCK
Write Recovery Time CL* = 2 tWR 2
tCK
CL* = 3 2
tCK
CLK Cycle Time CL* = 2 tCK 10 1000
CL* = 3 7.5 1000
CLK High Level Width tCH 2.5 9
CLK Low Level Width tCL 2.5 9
Access Time from CLK CL* = 2 tAC 6 10
CL* = 3 5.4 10
Output Data Hold Time tOH 3 10
CL* = 2 tHZ 6
Output Data High Impedance
Time CL* = 3 5.4 8
Output Data Low Impedance Time tLZ 0 10
Power Down Mode Entry Time tSB 0 7.5
Transition Time of CLK
(Rise and Fall) tT 1 nS 7
Data-in Set-up Time tDS 1.5 9
Data-in Hold Time tDH 1 9
Address Set-up Time tAS 1.5 9
Address Hold Time tAH 1 9
CKE Set-up Time tCKS 1.5 9
CKE Hold Time tCKH 1 9
Command Set-up Time tCMS 1.5 9
Command Hold Time tCMH 1 9
Refresh Time tREF 64 mS
Mode register Set Cycle Time tRSC 2
tCK
Exit self refresh to ACTIVE command tXSR 75 nS
*CL = CAS Latency
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 17 - Revision A11
Notes:
1. Operation exceeds "Absolute Maximum Ratings" may cause permanent damage to the devices.
2. All voltages are referenced to VSS.
3. These parameters depend on the cycle rate an d listed values are measured at a cycle rate with the
minimum values of tCK and tRC.
4. These parameters depend on the output loading conditions. Specified values are obtained with
output open.
5. Power up sequence please refer to "Functional Description" section described before.
6. AC Test Load diagram.
50 ohms
1. 4 V
AC TEST LOAD
Z = 50 ohm soutput 30pF
7. Transition times are measu red b etween VIH and VIL.
8. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to
output level.
9. Assumed input rise an d fall time (tT) = 1nS.
If tr & tf is longer than 1nS, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]nS should be added to the parameter
( The tT maximum can’t be more than 10nS for low frequ ency application. )
10. If clock transiton time tT is longer than 1nS, [(tT/2)-0.5]nS should be added to the parameter.
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 18 - Revision A11
10. TIMING WAVEFORMS
10.1 Command Input Timing
CLK
A0-A12
BS0, 1
V
IH
V
IL
t
CMH
t
CMS
t
CH
t
CL
t
T
t
T
t
CKS
t
CKH
t
CKH
t
CKS
t
CKS
t
CKH
Command Input Timing
CS
RAS
CAS
WE
CKE
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
AS
t
AH
t
CK
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 19 - Revision A11
10.2 Read Timing
Read CAS Latency
t
AC
t
LZ
t
AC
t
OH
t
HZ
t
OH
Burst Length
Read Command
CLK
CS
RAS
CAS
WE
A0 - A12
BS0, 1
DQ
Valid
Data-Out Valid
Data-Out
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 20 - Revision A11
10.3 Control Timing of Input/Output Data
t
CMH
t
CMS
t
CMH
t
CMS
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
Valid
Data-Out Valid
Data-Out Valid
Data-Out
Valid
Data-in Valid
Data-in Valid
Data-in Valid
Data-in
t
CKH
t
CKS
t
CKH
t
CKS
t
DS
t
DH
t
DS
t
DH
t
DH
t
DS
t
DS
t
DH
Valid
Data-in
Valid
Data-in
Valid
Data-in
Valid
Data-in
t
CMH
t
CMS
t
CMH
t
CMS
t
OH
t
AC
t
OH
t
AC
t
OH
t
HZ
OPEN
t
LZ
t
AC
t
OH
t
AC
t
CKH
t
CKS
t
CKH
t
CKS
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
Valid
Data-Out Valid
Data-Out
Valid
Data-Out
CLK
DQM
DQ0 -15
(Word Mask)
(Clock Mask)
CLK
CKE
DQ0 -15
CLK
Input Data
Output Data
(Output Enable)
(Clock Mask)
DQM
DQ0 -15
CKE
CLK
DQ0 -15
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 21 - Revision A11
10.4 Mode Register Set Cycle
A0
A1
A2
A3
A4
A5
A6
Burst Length
Addressing Mode
CAS Latency
(Test Mode)
A8 Reserved
A0A7
A0A9 A0Write Mode
A10
A12
A0A11
A0BS0
"0"
"0"
A0
A3 A0
Addressing Mode
A00 A0Sequential
A01 A0Interleave
A0A9 Single Write Mode
A00 A0Burst read and Burst write
A01 A0Burst read and single write
A0
A0A2 A1 A0
A00 0 0
A00 0 1
A00 1 0
A00 1 1
A01 0 0
A0
1 0 1
A01 1 0
A01 1 1
A0Burst Length
A0Sequential A0Interleave
1 A01
A02 A02
A04 A04
A08 A08
A0Reserved A0
Reserved
A0Full Page
A0CAS Latency
A0Reserved
A0Reserved
2
A03
Reserved
A0A6 A5 A4
A00 0 0
A00 1 0
A00 1 1
A01 0 0
A00 0 1
t
RSC
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
AS
t
AH
CLK
CS
RAS
CAS
A0-A12
BS0,1 Register
set data
next
command
A0
Reserved
"0"
"0"
"0"
"0"
WE
A0BS1 "0"
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 22 - Revision A11
11. OPERATING TIMING EXAMPLE
11.1 Interleaved Bank Read (Burst Length = 4, CAS Latenc y = 3)
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
DQ
CKE
DQM
A0-A9,
A11,A12
A10
BS1
WE
CAS
RAS
CS
BS0
t
RC
t
RC
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RP
t
RAS
t
RAS
t
RCD
t
RCD
t
RCD
t
RCD
t
AC
t
AC
t
AC
t
AC
t
RRD
t
RRD
t
RRD
t
RRD
Active Read
Active Read
Active
Active
Active
Read
Read
Precharge
Precharge
Precharge
RAa RBb RAc RBd RAe
RAa CAw RBb CBx RAc CAy RBd CBz RAe
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3 cy0 cy1 cy2 cy3
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 23 - Revision A11
11.2 Interleaved Bank Read (Burst Length = 4, CAS Latenc y = 3, Auto-precharge)
01 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
CKE
DQM
A0-A9,
A11, A12
A10
BS1
WE
CAS
RAS
CS
BS0
t
RC
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RAS
t
RP
t
RAS
t
RCD
t
RCD
t
RCD
t
RCD
t
AC
t
AC
t
AC
t
AC
t
RRD
t
RRD
t
RRD
t
RRD
Active Read
Active Read
Active
Active
Active
Read
Read
t
RC
RAa RBb RAc RBd RAe
DQ
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3 cy0 cy1 cy2 cy3 dz0
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP*
AP* AP*
RAa CAw RBb CBx RAc CAy RBd RAe
CBz
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 24 - Revision A11
11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)
01 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
RC
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RAS
t
RP
t
RCD
t
RCD
t
RCD
t
RRD
t
RRD
RAa
RAa CAx
RBb
RBb CBy
RAc
RAc CAz
ax0 ax1 ax2 ax3 ax4 ax5 ax6 by0 by1 by4 by5 by6 by7 CZ0
CLK
DQ
CKE
DQM
A0-A9,
A11,A12
A10
BS0
WE
CAS
RAS
CS
BS1
Active Read
Precharge Active Read
Precharge Active
t
AC
t
AC
Read
Precharge
t
AC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 25 - Revision A11
11.4 Interleaved Bank Read (Burst Length = 8, CAS Laten cy = 3, Auto-precharge)
A0-A9,
A11,A12
Bank #0
Idle
Bank #1
Bank #2
Bank #3
01 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
RC
t
RAS
t
RP
t
RAS
t
RCD
t
RCD
t
RCD
t
RRD
t
RRD
ax0 ax1 ax2 ax3 ax4 ax5 ax6 ax7 by0 by1 by4 by5 by6 CZ0
RAa
RAa
CAx
RBb
RBb CBy
RAc
RAc CAz
* AP is the internal precharge start timing
Active Read
Active
Active Read
t
CAC
t
CAC
t
CAC
CLK
DQ
CKE
DQM
A10
WE
CAS
RAS
CS
Read
AP*
AP*
BS1
BS0
t
RAS
t
RP
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 26 - Revision A11
11.5 Interleaved Bank Write (Burst Length = 8)
01 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RCD
t
RCD
t
RCD
t
RRD
t
RRD
RAa
RAa CAx
RBb
RBb CBy
RAc
RAc CAz
ax0 ax1 ax4 ax5 ax6 ax7 by0 by1 by2 by3 by4 by5 by6 by7 CZ0 CZ1 CZ2
Write
Precharge
Active
Active Write
Precharge
Active Write
CLK
DQ
CKE
DQM
A0-A9,
A11,A12
A10
BS0
WE
CAS
RAS
CS
BS1
Idle
Bank #0
Bank #1
Bank #2
Bank #3
t
RAS
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 27 - Revision A11
11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
RC
t
RAS
t
RP
t
RAS
t
RCD
t
RCD
t
RCD
t
RRD
t
RRD
RAa
RAa CAx
RBb
RBb CBy
RAb
RAc
ax0 ax1 ax4 ax5 ax6 ax7 by0 by1 by2 by3 by4 by5 by6 by7 CZ0 CZ1 CZ2
CAz
* AP is the internal precharge start timing
CLK
DQ
CKE
DQM
A0-A9
A11,A12
A10
BS0
WE
CAS
RAS
CS
BS1
Active Write Write
Active
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP*
Active Write AP*
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 28 - Revision A11
11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
CCD
t
CCD
t
CCD
t
RAS
t
RP
t
RAS
t
RP
t
RCD
t
RCD
t
RRD
RAa
RAa CAI
RBb
RBb CBx CAy CAm CBz
a0 a1 a2 a3 bx0 bx1 Ay0 Ay1 Ay2 am0 am1 am2 bz0 bz1 bz2 bz3
* AP is the internal precharge start timing
CLK
DQ
CKE
DQM
A0-A9,
A11,A12
A10
BS0
WE
CAS
RAS
CS
BS1
Active Read
Active Read
Read Read
Read
Precharge
t
AC
t
AC
t
AC
t
AC
t
AC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP*
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 29 - Revision A11
11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3)
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
RAS
t
RP
t
RCD
t
WR
RAa
RAa CAx CAy
ax0 ax1 ax2 ax3 ax4 ax5 ay1
ay0 ay2 ay4
ay3
QQ Q Q Q Q DDD
D
D
CLK
DQ
CKE
DQM
A0-A9,
A11,A12
A10
BS0
WE
CAS
RAS
CS
BS1
Active Read Write Precharge
t
AC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 30 - Revision A11
11.9 Auto-precharge Read (Burst Length = 4, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
DQ
CKE
DQM
A0-A9,
A11,A12
A10
BS1
WE
CAS
RAS
CS
BS0
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RCD
t
RCD
t
AC
Active Read AP* Active Read
RAa RAb
RAa CAw RAb CAx
aw0 aw1 aw2 aw3
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
t
AC
AP*
bx0 bx1 bx2 bx3
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 31 - Revision A11
11.10 Auto-precharge Write (Burst Length = 4)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
DQ
CKE
DQM
A0-A9,
A11,A12
A10
BS1
WE
CAS
RAS
CS
BS0
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
RAa
t
RCD
t
RCD
RAb RAc
RAa CAw RAb CAx RAc
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3
Active
Active Write AP* Active Write AP*
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 32 - Revision A11
11.11 Auto Refresh Cycle
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
All Banks
Prechage Auto
Refresh Auto Refresh (Arbitrary Cycle)
t
RC
t
RP
t
RC
CLK
DQ
CKE
DQM
A0-A9,
A11,A12
A10
WE
CAS
RAS
CS
BS0,1
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 33 - Revision A11
11.12 Self Refresh Cycle
012345678910 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11,A12
A10
BS0,1
WE
CAS
RAS
CS
tCKS
tSB tCKS tCKS
All Banks
Precharge Self Refresh
Entry Ar bitrary Cycle
tRP
Self Refresh Cycle tXSR
No Operation / Command Inhibit
Self Refresh
Exit
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 34 - Revision A11
11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
CS
RAS
CAS
WE
BS0
BS1
A10
A0-A9,
A11,A12
DQM
CKE
DQ
t
RCD
RBa
RBa
CBv CBw CBx CBy CBz
av0 av1 av2 av3 aw0 ax0 ay0 az0 az1 az2 az3
QQ QQ D DD QQQQ
t
AC
t
AC
Read Read
Single WriteActive
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 35 - Revision A11
11.14 Power Down Mode
012345678910 11 12 13 14 15 16 17 18 19 20 21 22 23
RAa CAa RAa CAx
RAa RAa
ax0 ax1 ax2 ax3
tSB
tCKS tCKS tCKS
tSB
tCKS
Active Standby
Power Down mode
Precharge Standby
Power Down mode
Active NOP Precharge NOP Active
Note: T he PowerDo wn Mod e is e n tered by as s erting CK E "lo w".
All In p ut/Outpu t b u ffers (e x ce p t CKE buffers) are tu rn ed off in the P ower Down mo de.
W hen C K E goes high, command input m ust be No o peration at next CLK rising edge.
Violating refresh requirements during power-down m ay result in a loss of data.
CLK
DQ
CKE
DQM
A0-A9
A11,A12
A10
BS
WE
CAS
RAS
CS
Read
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 36 - Revision A11
11.15 Auto-precharge Timing (Read Cycle)
Read AP
0 1110987654321
Q0
Q0
Read AP Act
Q1
Read AP Act
Q1 Q2
AP ActRead
Act
Q0
Q3
(1) CAS Latency=2
Read
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate command to
the start of internal precgarging must be at least t
RAS
(min).
represents the Read with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note:
t
RP
t
RP
t
RP
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
t
RP
Q0
Read AP Act
Q0
Read AP Act
Q1
Q0
Read AP Act
Q1 Q2 Q3
Read AP Act
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
(2) CAS Latency=3
t
RP
t
RP
t
RP
t
RP
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 37 - Revision A11
11.16 Auto-precharge Timing (Write Cycle)
Act
01 32
(1) CAS Latency = 2
(a) burst length = 1
DQ
45 76891110
Write
D0
ActAP
Command
(b) burst length = 2
DQ
Write
D0
ActAP
Command
tRP
tRP
D1
(c) burst length = 4
DQ
Write
D0
ActAP
Command
tRP
D1
(d) burst length = 8
DQ
Write
D0
ActAP
Command
tRP
D1
D2 D3
D2 D3 D4 D5 D6 D7
(2) CAS Latency = 3
(a) burst length = 1
DQ
Write
D0
ActAP
Command
(b) burst length = 2
DQ
Write
D0
ActAP
Command
tRP
tRP
D1
(c) burst length = 4
DQ
Write
D0
ActAP
Command
tRP
D1
(d) burst length = 8
DQ
Write
D0
AP
Command
tRP
D1
D2 D3
D2 D3 D4 D5 D6 D7
tWR
tWR
tWR
tWR
tWR
tWR
tWR
tWR
12
Act
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 38 - Revision A11
11.17 Timing Chart of Read to Write Cycle
Note: The Output data must be masked by DQM to avoid I/O conflict.
Read Write
1110987654321
Read
Read
Read Write
Write
D0 D1 D2 D3
Write
DQ
DQ
( a ) Command
0
DQ
DQ
DQM
( b ) Command
DQM
( b ) Command
DQM
DQM
D0 D1 D2 D3
D0 D1 D2 D3
D0 D1 D2 D3
(1) CAS Latency=2
( a ) Command
(2) CAS Latency=3
In the case of Burst Length = 4
11.18 Timing Chart of Write to Read Cycle
ReadWrite
01110987654321
Q0
Read
Q1 Q2 Q3
Read
Read
Write
Write
Q0 Q1 Q2 Q3
Write
Q0 Q1 Q2 Q3
D0 D1
DQ
DQ
( a ) Command
DQ
DQ
DQM
( b ) Command
DQM
( a ) Command
( b ) Command
DQM
DQM
In the case of Burst Length=4
(1) CAS Latency=2
(2) CAS Latency=3
D0
D0 D1
Q0 Q1 Q2 Q3D0
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 39 - Revision A11
11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command)
Read BST
0 1110987654321
DQ
Q0 Q1 Q2 Q3
BST
( a ) CAS latency =2
Command
( b )CAS latency = 3
(1) Read cycle
Q4
(2) Write cycle
Command
Read
Command
Q0 Q1 Q2 Q3 Q4
Q0 Q1 Q2 Q3 Q4
DQ
DQ
Write BST
Note: represents the Burst stop command
BST
11.20 Timing Chart of Burst Stop Cycle (Precharge Command)
01 111098765432
(1) Read cycle
(a) CAS latency =2
Command
Q0 Q1 Q2 Q3 Q4
PRCGRead
(b) CAS latency =3
Command
Q0 Q1 Q2 Q3 Q4
PRCGRead
DQ
DQ
(2) Write cycle
(a) CAS latency =2
Command
Q0 Q1 Q2 Q3 Q4
PRCG
Write
(b) CAS latency =3
Command
Q0 Q1 Q2 Q3 Q4
Write
DQ
DQ
DQM
DQM
PRCG
tWR
tWR
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 40 - Revision A11
11.21 CKE/DQM Input Timing (Write Cycle)
7
6
5432
1
CKE MASK
( 1 )
D1 D6D5D3D2
CLK cycle No.
External
Internal
CKE
DQM
DQ
7
6
5432
1
( 2 )
D1 D6D5D3D2
CLK cycle No.
External
Internal
CKE
DQM
DQ
76
543
2
1
( 3 )
D1 D6
D5D4D3D2
CLK cycle No.
External
CKE
DQM
DQ
DQM MASK
DQM MASK CKE MASK
CKE MASK
Internal
CLK
CLK
CLK
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 41 - Revision A11
11.22 CKE/DQM Input Timing (Read Cycle)
7
6
5432
1
( 1 )
Q1 Q6
Q4Q3Q2
CLK cycle No.
External
Internal
CKE
DQM
DQ
Open Open
7
6
5432
1
Q1 Q6Q3
Q2
CLK cycle No.
External
Internal
CKE
DQM
DQ
Open
( 2 )
765432
1
Q1 Q6
Q2
CLK cycle No.
External
Internal
CKE
DQM
DQ
Q5
Q4
( 3 )
Q4
CLK
CLK
CLK
Q3
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 42 - Revision A11
12. PACKAGE SPECIFICATION
12.1 54L TSOP II - 400 mil
SEATING PLANE
E
D
A2
A1
A
eb
ZD
1 27
54 28
HE
Y
L
C
L1
ZD 0.71 0.028
0.002
0.009
MAX.MIN. NOM.
A2
b
A
A1
0.24 1.00
0.05
0.40
1.20
0.15
SYM.
DIMENSION
(MM)
MAX.MIN. NOM.
e0.80 0.0315
0.016
L0.40 0.50 0.60 0.020 0.024
0.396
E10.06 10.16 10.26 0.400 0.404
0.871
D22.2222.12 22.62 0.875 0.905
0.039 0.016
0.047
0.006
DIMENSION
(INCH)
0.10 0.004
0.32
L1 0.80 0.032
c0.15 0.006
0.012
0.45511.7611.56 11.96 0.463 0.471
HE
Y0.10 0.004
Controlling Dimension: Millimeters
W9825G6DH
Publication Release Date:Nov. 14, 2007
- 43 - Revision A11
13. REVISION HISTORY
VERSION DATE PAGE DESCRIPTION
P0 Feb., 2006 - Preliminary datasheet
A0 Aug., 2006 10 Add auto refresh comm and description.
A1 Oct., 2006 15,16 Add tXSR timing specification.
A2 Jan, 2007 3,13,14,15 Add -6I grade for Ta= -40 to 85°C
A3 Jan, 2007 3,13,14,15 Add -6E/75I grade for Ta= -25/-40 to 85°C
A4 Feb. 15, 2007 3,15,16 Modify -6 to support 133MHz , CL=2, tRCD/tRP=2
Remove the min. of tT
A5 Apr. 25, 2007 15 Modify -6 grade AC timing specification tIH min from
1.0nS to 0.8nS
A6 May 16, 2007 15 Modify -6 grade AC timing specification tIH min from
0.8nS to 0.7nS
A7 Jun. 13, 2007 15 Modify -6/-6E/-6I grade AC timing specification tCH and
tCL from 2.5nS to 2nS
A8 Jun. 25, 2007 3,13,14,15,
16 Add -6C grade and remove -6E/75E grade
(-6 grade tIH min is 1nS, -6C grade tIH min is 0.7nS)
A9 Jun. 28, 2007 15 Modify -6 grade AC timing specification tIH min from
1.0nS to 0.8nS
A10 Aug. 13, 2007 17 Revise transient time tT AC test condition and calculate
formula for compensation consi deration in Notes 6, 9 of
AC Characteristics and Op erating Condition
A11 Nov. 14, 2007 14, 17 Revise ICC2S and ICC3P parameters in DC
Characteristics table from 10mA to 15mA and remove
AC Testing Conditions table in Notes 6
W9825G6DH
Publication Release Date: Nov. 14 , 2007
- 44 - Revision A11
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components
in systems or equipment intended for surgical implantation, atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal
instruments, combustion control instruments, or for other applications intended to support or
sustain life. Further more, Winbond products are not intended for applications wherein failure
of Winbond products could result or lead to a situation wherein personal injury, death or
severe property or envi ronmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their
own risk and agree to fully indemnify Winbond for any damages resulting from such improper
use or sales.
