Switching and General Purpose Transistors 2N3506, 2nN3507 (siticon) Vero = 40-50 V (JAN2N3506 AND JAN2N3507 AVAILABLE) = f; =100 MHz Typ NPN silicon annular transistors for high-current, high-speed, saturated switching and coredriver appli- cations. Collector connected to case CASE 31 (TO-5) MAXIMUM RATINGS Rating Symbol 2N3506 | 2N3507 Unit Collector-Base Voltage Von 60 80 Vdc Collector-Emitter Voltage Vero 40 50 Vdc Emitter-Base Voltage Ves 5 Vde Collector Current Io 3 Adc Total Device Dissipation @ 25C Case Temperature Py 5 Watts Derating Factor Above 25C 28.6 mw/C Total Device Dissipation @ 25C Ambient Temperature Py 1.0 Watts Derating Factor Above 25C 5. 71 mw/C Junction Operating Temperature T, 200 c Storage Temperature Range T stg -65 to +200 C THERMAL RESISTANCE 63, = 0.175C/mW 91 = 35C/W SATURATION VOLTAGES SWITCHING TIMES Vee (set) Visat]. SATURATION VOLTAGE (VOLTS) TIME (ns) te 01 02 03 0.5 10 2.0 3.0 0.1 02 03 05 07 1.0 20 3.0 fo, COLLECTOR CURRENT (Adc! Ic, COLLECTOR CURRENT (Ade) 8-238