SST441NL/U441NL New Product Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) -1 to -6 -25 4.5 IG Typ (pA) |VGS1 - VGS2|Max (mV) -1 20 FEATURES BENEFITS APPLICATIONS D D D D D D D D External Substrate Bias--Avoids Latchup D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D High-Speed Performance D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters Anti Latchup Capability Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 1 pA Low Noise High CMRR: 90 dB DESCRIPTION The SST441NL is a monolithic high-speed dual JFET mounted in a single SO-8 package. This JFET is an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. Pins 4 and 8 on the SST441NL and pin 4 on the U441NL part numbers enable the substrate to be connected to a positive, external bias (VDD) to avoid latchup. The U441NL in the hermetically sealed TO-78 package is available with full military processing. The SO-8 package provides ease of manufacturing. The symmetrical pinout prevents improper orientation. The SO-8 package is available with tape-and-reel options for compatibility with automatic assembly methods. TO-78 Narrow Body SOIC S1 S1 1 8 SUBSTRATE D1 2 7 G2 G1 3 6 D2 SUBSTRATE 4 5 S2 G2 1 D1 7 2 D2 6 3 G1 5 S2 4 CASE, SUBSTRATE Top View Marking Codes: Top View U441NL SST441NL - 441NL ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2.4 mW/_C above 25_C b. Derate 4 mW/_C above 25_C For applications information see AN102. Document Number: 72056 S-22526-Rev. A, 17-Feb-03 www.vishay.com 7-1 SST441NL/U441NL New Product Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Typa Symbol Test Conditions Min Max Unit V(BR)GSS IG = -1 mA, VDS = 0 V -25 -35 VGS(off) VDS = 10 V, ID = 1 nA -1 -3.5 VDS = 10 V, VGS = 0 V 6 15 30 mA -1 -500 pA Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Gate-Source Forward Voltage IDSS IGSS IG VGS(F) VGS = -15 V, VDS = 0 V -6 -0.2 TA = 125_C VDG = 10 V, ID = 5 mA -1 TA = 125_C IG = 1 mA , VDS = 0 V V nA -500 pA -0.2 nA 0.7 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en VDS = 10 V, ID = 5 mA f = 10 kHz 4 Differential Gate-Source Voltage |V GS1 - V GS2| VDG = 10 V, ID = 5 mA 7 Gate-Source Voltage Differential Change with Temperature D|V GS1 - V GS2| VDG = 10 V, ID = 5 mA TA = -55 to 125_C 10 VDS = 10 V, VGS = 0 V 0.98 VDS = 10 V, ID = 5 mA f = 1 kHz 0.98 VDG = 10 to 15 V, ID = 5 mA 90 4.5 VDS = 10 V, ID = 5 mA f = 1 kHz VDS = 10 V, ID = 5 mA f = 100 MHz 6 9 mS 20 200 mS 5.5 mS 30 mS 3.5 VDS = 10 V, ID = 5 mA f = 1 MHz pF 1 nV Hz Matching Saturation Drain Current Ratioc Transconductance Ratioc Common Mode Rejection Ratio DT I DSS1 I DSS2 gfs1 gfs2 CMRR Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Assumes smaller value in the numerator. www.vishay.com 7-2 20 mV mV/_C dB NNZ Document Number: 72056 S-22526-Rev. A, 17-Feb-03 SST441NL/U441NL New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 15 20 15 13 11 gfs 10 9 5 7 IDSS IG @ ID = 5 mA -10 nA 1 mA IG - Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDG = 10 V, VGS = 0 V f = 1 kHz -100 nA gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 25 100 mA -1 nA TA = 125_C -100 pA 5 mA 1 mA -10 pA 100 mA TA = 25_C -1 pA IGSS @ 25_C 0 5 0 -3 -1 -2 -4 VGS(off) - Gate-Source Cutoff Voltage (V) -0.1 pA 0 -5 5 Output Characteristics 25 25 VGS(off) = -3 V VGS(off) = -4 V 16 VGS = 0 V 20 VGS = 0 V ID - Drain Current (mA) ID - Drain Current (mA) 10 15 20 VDG - Drain-Gate Voltage (V) Output Characteristics 20 12 -0.4 V -0.8 V 8 -1.2 V 4 -2.0 V 0 4 8 12 16 VDS - Drain-Source Voltage (V) -0.4 V 15 -0.8 V -1.2 V 10 -1.6 V -2.0 V 5 -1.6 V 0 -2.4 V -2.8 V 0 20 0 Output Characteristics VGS = 0 V -0.2 V 3 20 -1.0 V -1.4 V -1.6 V 1 VGS = 0 V -0.8 V -1.2 V 6 -1.6 V 4 -2.0 V -2.4 V 2 0 -0.4 V 8 -0.8 V -1.2 V 2 VGS(off) = -4 V -0.6 V ID - Drain Current (mA) 4 8 12 16 VDS - Drain-Source Voltage (V) 10 -0.4 V VGS(off) = -3 V 4 Output Characteristics 5 ID - Drain Current (mA) IGSS @ 125_C -2.8 V 0 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) Document Number: 72056 S-22526-Rev. A, 17-Feb-03 1 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) 1 www.vishay.com 7-3 SST441NL/U441NL New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Gate-Source Differential Voltage vs. Drain Current Transfer Characteristics 100 20 VGS(off) = -3 V VDS = 10 V VDG = 10 V TA = 25_C (mV) 16 12 25_C VGS1- VGS2 ID - Drain Current (mA) TA = -55_C 8 125_C 4 0 1 0 -0.5 -1.0 -1.5 -2.0 0.1 -2.5 Voltage Differential with Temperature vs. Drain Current Common Mode Rejection Ratio vs. Drain Current 150 DVDG CMRR = 20 log D 130 CMRR (dB) ( m V/ _C ) VDG = 10 V DTA = 25 to 125_C DTA = -55 to 25_C Dt 10 VGS1 VGS2 110 DVDG = 10 - 20 V 90 D 5 - 10 V 70 50 0.1 1 10 0.1 ID - Drain Current (mA) 1 10 ID - Drain Current (mA) Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current 100 200 80 rDS(on) - Drain-Source On-Resistance ( ) g fs R L AV + 1 ) R g L os AV - Voltage Gain 10 ID - Drain Current (mA) 1 Assume VDD = 15 V, VDS = 5 V RL + 60 10 V ID 40 VGS(off) = -3 V -4 V 20 0 160 VGS(off) = -3 V 120 -4 V 80 40 0 0.1 1 ID - Drain Current (mA) www.vishay.com 7-4 1 VGS - Gate-Source Voltage (V) 100 VGS1 - VGS2 10 10 0.1 1.0 10 ID - Drain Current (mA) Document Number: 72056 S-22526-Rev. A, 17-Feb-03 SST441NL/U441NL New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 10 5 C rss - Reverse Feedback Capacitance (pF) C iss - Input Capacitance (pF) f = 1 MHz 8 6 VDS = 0 V 5V 4 2 15 V 0 f = 1 MHz 4 3 VDS = 0 V 5V 2 1 15 V 0 0 -4 -12 -8 -16 -20 0 -4 -16 -20 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) Output Conductance vs. Drain Current Equivalent Input Noise Voltage vs. Frequency 20 50 VDS = 10 V f = 1 kHz VDS = 10 V Hz VGS(off) = -3 V en - Noise Voltage nV / 40 gos - Output Conductance (S) -12 -8 30 TA = -55_C 20 25_C 10 16 12 ID @ 10 mA 8 4 VGS = 0 V 125_C 0 0 0.1 1 10 10 1k 10 k 100 k ID - Drain Current (mA) f - Frequency (Hz) Common-Source Forward Transconductance vs. Drain Current On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 VDS = 10 V f = 1 kHz 8 6 TA = -55_C 25_C 125_C 4 2 100 rDS 200 gos 150 50 100 50 rDS @ ID = 1 mA, VGS = 0 V gos @ VDG = 10 V, VGS = 0 V, f = kHz 0 0 0.1 1 ID - Drain Current (mA) Document Number: 72056 S-22526-Rev. A, 17-Feb-03 10 g os - Output Conductance ( m S) rDS(on) - Drain-Source On-Resistance ( ) 250 VGS(off) = -3 V gfs - Forward Transconductance (mS) 100 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) www.vishay.com 7-5