THCS251-MNTA - THine Electronics, Inc.

Datasheet

SiC Power Module

BSM300C12P3E301

Application Circuit diagram

Converter

Features

1) Low surge, low switching loss.

2) High-speed switching possible.

3) Reduced temperature dependence. ※Do not connect anything to NC pin.

Construction

This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM.

Dimensions & Pin layout (Unit : mm)







8

9

5

6(N.C)

7

1

3,4

2

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Datasheet

BSM300C12P3E301

Absolute maximum ratings (Tj = 25°C)

Note 1)

Note 2)

Note 3)

Example of acceptable VGS waveform

Repetitive Reverse Voltage VRRM 1200

Clamp diode

A

300

600

Forward Current

(clamp diode) Note 1)

IF

IFRM

DC(Tc = 60℃)

Pulse (Tc = 60℃） 1ms Note 2）

Mounting Torque

Total Power Dissipation Note 3)

Max Junction Temperature

Junction Temperature

Storage Temperature

Isolation Voltage

IS

ISRM

-

Parameter Symbol

Drain Current Note 1)

Ratings

1200

22

-4

-4 to 26

600

IDRM Pulse (Tc = 60°C） 1ms VGS=18V Note 2)

D-S short

Gate - Source Voltage (-)

G - S Voltage (tsurge<300nsec)

DC(Tc=60°C) VGS=18V

Conditions

Gate - Source Voltage (+)

VDSS

VGSS

2500

4.5

3.5

300

Main Terminals : M6 screw N ・m

Mounting to heat sink M5 screw

600

Case temperature (Tc) is defined on the surface of base plate just under the chips.

Repetition rate should be kept within the range where temperature rise if die should not

Vrms

Terminals to baseplate f = 60Hz AC 1 min.

Source Current Note 1)

exceed Tjmax.

Tj is less than 175°C.

Unit

DC (Tc = 50℃）

Pulse (Tc = 60°C） 1ms VGS=18V Note 2)

Pulse (Tc = 60°C） 10µs VGS=0V Note 2)

Tc = 25°C

Tstg

W

°C

1360

175

-40 to 150

ID

ISRM

DC(Tc=60°C) VGS=18V 288

288

-40 to 125

VGSS

VGSSsurge

ID

300

G-S short

V

D-S short

Drain - Source Voltage

DC(Tc=50°C) VGS=18V

Ptot

Tjmax

Tjop

Visol

+22V

-4V

+26V

tsurge

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Datasheet

BSM300C12P3E301

Electrical characteristics (Tj=25°C)

Note 4)

Measurement of Tc is to be done at the

＜

Wavelength for Switching Test

＞

point just under the chip.

Note 5)

Typical value is measured by using

thermally conductive grease of λ=0.9W/(m

・

K).

Note 6)

withstand capability due to high current density.

Please be advised to pay careful attention to

short cuicuit accident and try to adjust

protection time to shutdown them as short

as possible.

Note 7)

If the Product is used beyond absolute maximum

ratings defined in the Specifications, as its

internal structure may be dameged, please

replace such Product with a new one.

SiC devices have lower short cuicuit

Reverse current IRRM Clamp diode －－ 3.2 mA

0.9 －

td(on)

20

°C/W

SBD（1/2 module） Note 4) －－

Case-to -heat sink

Thermal Resistance Case to heat sink, per 1 module. Thermal grease

applied. Note 5）

－0.035

Junction-to -Case

Thermal Resistance

－

UMOSFET（1/2 module） Note 4) －－ 0.11

Rth(j-c) 0.11

mm

V

kΩ

nH

Ω

－

－170 －

-

Gate Registance Tj=25°C －

Ciss

RGint

Input Capacitance VDS=10V,VGS=0V,200kHz －15

Clearance Distance Terminal to heat sink －12 －

-

13 －

Ls

Terminal to terminal －9－mm

Creepage Distance Terminal to heat sink －14.5 －mm

Stray Inductance

Terminal to terminal －15 －mm

－

NTC B Value －3370 －K

R25NTC Rated Resistance B50/25

－5－

tf

ns

－35 －

－

nF

Switching

Characteristics

VGS(on)=18V、VGS(off)=0V

VDS=600V

ID=300A

RG(on)=2.7 ohm, RG(off)=2.2 ohm

Inductive load

－40 －

－30 －

trr

td (off)

－

Gate-Source

Threshold Voltage

VGS=-4V,VDS=0V -0.5 －－

VDS=10V,ID=80mA 2.7 －5.6VGS(th)

IGSS

Gate-Source

Leak Current VGS=22V,VDS=0V －－ 0.5 µA

Tj=150°C －2.3 3.2 VTj=125°C

Drain Cutoff Current

－2.2 －

Forward Voltage IF=300A Tj=25°C －1.6 2.1

VDS=1200V,VGS=0V －－ 10IDSS

VF

µA

Tj=150°C －3.0 4.5

On-state static

Drain-Source

Voltage ID=300A,VGS=18V Tj=25°C －1.9

VDS(on) 3.0 VTj=125°C －2.7 －

Conditions Ratings Unit

Min. Typ. Max.

SymbolParameter

Rth(c-f)

tr

I

D

V

DS

10%

V

GS

10%

90%

10% 10%

90%

Eon=Id×Vds

2%

td(on) tr

2%

trr

90%

2%2%

Eoff=Id×Vds

td(off) tf

Vsurge

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Datasheet

BSM300C12P3E301

Electrical characteristic curves (Typical)

Fig.1 Output characteristic 25°C　(TYP) Fig.2 Drain source voltage characteristic

(TYP)

Ron (mΩ)

Junction temperature Tj (°C)

Drain source voltage VDS (V)

Gate source voltage VGS (V)

Drain source voltage VDS (V)

Drain current ID (A)

Drain source voltage VDS (V)

Fig.3 Drain source voltage characteristic

25°C (TYP) Fig.4 Ron vs Tj characteristic (TYP)

0

100

200

300

400

500

600

02468

VGS=20V

VGS=18V

VGS=16V

VGS=14V

VGS=12V

VGS=10V

0

1

2

3

4

5

6

7

8

0 200 400 600

Tj=25℃

Tj=125℃

VGS=18V

Tj=150℃

0

1

2

3

4

5

12 14 16 18 20 22 24

Tj=25℃

ID=100A

ID=150A

ID=200A

ID=300A

0

5

10

15

20

0 50 100 150 200 250

VGS=14V

VGS=12V

VGS=16V

VGS=18V

VGS=20V

ID=300A

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Datasheet

BSM300C12P3E301

Electrical characteristic curves (Typical)

Drain Current ID (A)

Gate Source Voltage VGS (V) Gate Source Voltage VGS (V)

Source current IS (A)

Source drain voltage VF (V) Source drain voltage VF (V)

Fig.5 Forward characteristic of Diode

(TYP) Fig.6 Forward characteristic of Diode

(TYP)

Fig.8 Drain Current vs Gate Voltage (TYP)

Fig.7 Drain Current vs Gate Voltage (TYP)

10

100

1000

01234

Tj=25℃

Tj=125℃

Tj=150℃

0

100

200

300

400

500

600

0 1 2 3 4 5

Tj=25℃

Tj=125℃

Tj=150℃

0

100

200

300

400

500

600

0 5 10 15

Tj=25℃

Tj=125℃

VDS=20V

Tj=150℃

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

0 5 10 15

Tj=25℃

VDS=20V

Tj=125℃

Tj=150℃

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Datasheet

BSM300C12P3E301

Electrical characteristic curves (Typical)

Switching loss (mJ)

Switching time (ns)

Fig.9 Switching time vs drain current at

25°C (TYP) Fig.10 Switching time vs drain current at

125°C (TYP)

Drain current ID (A) Drain current ID (A)

Fig.11 Switching time vs drain current at

150°C (TYP) Fig.12 Switching loss vs drain current at

25°C (TYP)

Drain current ID (A) Drain current ID (A)

Switching time (ns)

1

10

100

1000

0 200 400 600

td(off)

VDS=600V

VGS(on)=18V

VGS(off)=0V

td(on)tr

tf

RG(on)=2.7Ω

RG(off)=2.2Ω

INDUCTIVE LOAD

1

10

100

1000

0 200 400 600

td(off)

INDUCTIVE LOAD

RG(on)=2.7Ω

RG(off)=2.2Ω

td(on) tr

tf

VDS=600V

VGS(on)=18V

VGS(off)=0V

1

10

100

1000

0 200 400 600

td(off)

td(on)

tr

tf

INDUCTIVE LOAD

RG(on)=2.7Ω

RG(off)=2.2Ω

VDS=600V

VGS(on)=18V

VGS(off)=0V 0

2

4

6

8

10

12

14

16

18

20

0 200 400 600

Eon

VDS=600V

VGS(on)=18V

VGS(off)=0V

RG(on)=2.7Ω

RG(off)=2.2Ω

INDUCTIVE LOAD

Err

Eoff

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Datasheet

BSM300C12P3E301

Electrical characteristic curves (Typical)

Fig.16 Recovery characteristic vs drain

current at 125°C (TYP)

Fig.15 Recovery characteristic vs drain

current at 25°C (TYP)

Fig.14 Switching loss vs drain current at

150°C (TYP)

Fig.13 Switching loss vs drain current at

125°C (TYP)

Drain current ID (A) Drain current ID (A)

Recovery time trr (ns)

Switching loss (mJ)

0

2

4

6

8

10

12

14

16

18

20

0 200 400 600

Eon

Err

Eoff

VDS=600V

VGS(on)=18V

VGS(off)=0V

RG(on)=2.7Ω

RG(off)=2.2Ω

INDUCTIVE LOAD

0

2

4

6

8

10

12

14

16

18

20

0 200 400 600

Eon

Err

Eoff

VDS=600V

VGS(on)=18V

VGS(off)=0V

RG(on)=2.7Ω

RG(off)=2.2Ω

INDUCTIVE LOAD

10

100

1000

1

10

100

0 200 400 600

Recovery current Irr(A)

trr

Irr

VDS=600V

VGS(on)=18V

VGS(off)=0V

RG=2.7Ω

INDUCTIVE LOAD 10

100

1000

1

10

100

0 200 400 600

Recovery current Irr(A)

trr

Irr

VDS=600V

VGS(on)=18V

VGS(off)=0V

RG=2.7Ω

INDUCTIVE LOAD

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Datasheet

BSM300C12P3E301

Electrical characteristic curves (Typical)

Gate resistance RG (Ω)

Switching time (ns)

Recovery time trr (ns)

Switching time (ns)

Fig.20 Switching time vs gate resistance

at 150°C (TYP)

Fig.19 Switching time vs gate resistance

at 125°C (TYP)

Gate resistance RG (Ω) Gate resistance RG (Ω)

Drain current ID (A)

Fig.18 Switching time vs gate resistance

at 25°C (TYP)

Fig.17 Recovery characteristic vs drain

current at 150°C (TYP)

10

100

1000

1

10

100

0 200 400 600

Recovery current Irr(A)

trr

Irr

VDS=600V

VGS(on)=18V

VGS(off)=0V

RG=2.7Ω

INDUCTIVE LOAD

10

100

1000

10000

1 10 100

td(off)

td(on) tr

tf

INDUCTIVE LOAD

VDS=600V

ID=300A

VGS(on)=18V

VGS(off)=0V

10

100

1000

10000

1 10 100

td(off)

td(on)

tr

tf

INDUCTIVE LOAD

VDS=600V

ID=300A

VGS(on)=18V

VGS(off)=0V

10

100

1000

10000

1 10 100

td(off)

td(on)

tr

tf

INDUCTIVE LOAD

VDS=600V

ID=300A

VGS(on)=18V

VGS(off)=0V

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Datasheet

BSM300C12P3E301

Electrical characteristic curves (Typical)

Fig.21 Switching loss vs gate resistance

at 25°C (TYP) Fig.22 Switching loss vs gate resistance

at 125°C (TYP)

Gate resistance RG (Ω)

Gate resistance RG (Ω) Gate resistance RG (Ω)

Switching loss (mJ)

Fig.23 Switching loss vs gate resistance

at 150°C (TYP)

Switching loss (mJ)

0

10

20

30

40

50

60

1 10 100

Eon

Err

Eoff

VDS=600V

ID=300A

VGS(on)=18V

VGS(off)=0V

INDUCTIVE LOAD

0

10

20

30

40

50

60

1 10 100

Eon

Err

Eoff

VDS=600V

ID=300A

VGS(on)=18V

VGS(off)=0V

INDUCTIVE LOAD

0

10

20

30

40

50

60

1 10 100

Eon

Err

Eoff

VDS=600V

ID=300A

VGS(on)=18V

VGS(off)=0V

INDUCTIVE LOAD

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Datasheet

BSM300C12P3E301

Electrical characteristic curves (Typical)

Drain source voltage VDS (V) Gate charge QG (nC)

Capacitance(F)

Gate source voltage VGS(V)

Fig.24 Capacitance vs Drain source

voltage (TYP) Fig.25 Gate charge characteristic (TYP)

Time (s)

Normalized transient

thermal impedance

Fig.26 Transient thermal impedance (TYP)

1.E-10

1.E-09

1.E-08

1.E-07

0.01 0.1 1 10 100 1000

Ciss

Tj=25℃

VGS=0V

200kHz

Coss

Crss

0

5

10

15

20

25

0 200 400 600 800 1000

ID=300A

VDS=600V

Tj=25℃

0.01

0.1

1

0.001 0.01 0.1 1 10

Single Pulse

Tc=25℃

Per unit base

UMOS part : 0.11℃/W

SBD part :0.11℃/W

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R1107

S

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More detail product informations and catalogs are available, please contact us.

Notes

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative

and verify the latest specifica-

tions.

Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

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non-compliance with any applicable laws or regulations.

When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

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