SPECIFICATIONS General Series PIC 4{O0O02, PTC 10003 NPN Silicon Power Darlington Transistors 10 Amperes 400 Volts FEATURES High Voltage Rating 400 Volts Sustaining @ Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS @ High Voltage Switching Power Supplies @ Inverters/Regulators @ Deflection Circuits Control Circuitry Electrical The PTC 10002 and PTC 10003 Powermode series of silicon NPN darlington transistors are designed for high voltage, high speed, high power switching applications. These high voltage darlington transistors are ideally suited for applications in switching power supplies, regulators and inverter or converter circuits operating CASE c foto | B Le | ' ! i ' ' we off 240 voltlines. Et TY O_O E 1.050 0.161 (4.09) 0.450 (11.43) (26.68) MAX. | 0.151 (3.84) DIA. 0.135 bow (22.23) "0.250 (635) | 2 HOLES (3.43) MAX. em SEATING | | | PLANE 0.675 (17.65)t 1.573 UJ tt 0.655 (16.64) (39.96) MAX. L932 (8.13) MIN. | 1.197 (30.40) 0,043 (1.09) 4. BASE 1.177 (29.90) 0.161 17 0.151 DIA. | 0.225 (5.72)t a} | 0.205 (5.21) | 0.440 (11.18)f 0.420 (10.67) tMEASURED AT SEATING PLANE 0.038 (0.97) Basic dimensions in inches. Dimensions shown in PARENTHESES are in millimeters. Package outline JEDEC TO-204MA AVAILABLE IN STANDARD VALUES FROM STOCK AT ELECTRONIC DISTRIBUTORS. 274SERIES PTC 10002/10003 High Voltage Fast Switching NPN Darlingtons Absolute maximum ratings Thermal and mechanical characteristics Description PTC 10002 | PTC 10003 | Unit | Conditions Description Type | Min. | Typ. | Max. | Unit VCBO Collector-Base Voltage 450 500 Volts ReJc Thermal Resistance dunction to Case All 1.17 | CW VCEO(sus} Collector-Emitter Voltage 350 400 Volts Maximum Lead Temperature for Vi . CEX(sus) _ Collector-Emitter Voltage 400 450 Volts Soldering Purposes: Fe trom Case os | ec Ic Collector Current Continuous 10 A for 5 Seconds Ic Collector Current Peak 20 A tJ,tSTG Operatingand Storage Junction 65 200 C IB Base Current Continuous 2.5 A Temperature Range Ip Base Current Peak 5.0 A Pp Maximum Power Dissipation 150 Ww Tc = 25C IE , Emitter Current Continuous 10 A IE Emitter Current Peak 20 A . . _ inde o os age Electrical characteristics at 25C (unless otherwise specified) PTC 10002 PTC 10003 Description Min. Max. Min. Max. Unit Conditions VCEO(sus) Collector-Emitter Ic =2A L=2mH Sustaining Voltage 350 400 Vv Unclamped VCEX(sus} Collector-Emitter Ic = 24 Sustaining Voltage 400 450 Vv VBE (off) = 5.0V VCE = Rated VCBO , cot cuottc 0.25 0.25 mA VBE(ott) = 1.5V CEV collector Cutoff Current 5 5 mA VCE = Rated CBO VBE(off} = 1.5V,Tc = +100C IEBO Emitter Cutoff Current 175 175 mA VEB = 8V Vy Coll Fi 19 L9 Vv Ic = 5, IB = 250mA 'CE(sat) ollector-Emitter : ; S Saturation Voltage 2.0 2.0 Vv Ic = 5A, IB = 250mA, Tc = + 100C 2.9 29 Vv Ic = 10A, IB = 1.0A VBE (sat) Base-Emitter _ _e Saturation Voltage 25 25 Vv Ic = 5A, IB = 250mA 40 500 Ic = 2.5A, VCE = 5V hFE DC Current Gain 30 300 Ic = 5.0A, VCE = 5V VF Diode Forward Voltage 5 5 Vv IF = 5A Isfo Second Breakdown 10 10 VCE = 15V, Collector Current Non Rep. tp = 1s Switching characteristics Description Resistive Load Min. Max. Min. Max. Unit Conditions td Delay Time 0.2 0.2 BS t Rise Ti 0.6 0.6 VCC = 250, IC = 5A ane HS Ipj = 0.254, lag = 1A, tp = 20us ts Storage Time 3.0 3.0 uS VBE (off) = 6V tf Fall Time 15 15 us Description Inductive Load, Clamped Min. Max. Min. Max. Unit Conditions tsy Storage Time 3.0 3.0 Velamp = 250V, Ic = 5A IB1 = 0.254, IB2 = 1A te Crossover Time 0.9 0.9 VBE(ott) = 6V,L = 200uH tw Storage Time 6.0 6.0 Velamp = 250V, Tc = + 100C IB1 = 0.25A, Ip2 = 1A, Ic = 5A te Crossover Time 25 2.5 VBE(off) = 6V,L = 200uH 275