S8559 - Hamamatsu Photonics K.K.

Features

Si photodiode coupled to low cost CsI scintillator

Ideal for detection of X-ray energy below 100 keV

Applications

X-ray detection

X-ray monitors

PHOTODIODE

Si photodiode

Detector for X-ray monitor

S8559

■ Absolute maximum ratings (Ta=25 °C)

Parameter Symbol Value Unit

Reverse voltage VR Max. 5 V

Operating temperature Topr -10 to +60 °C

Storage temperature Tstg -20 to +70 °C

■ Electrical and optical characteristics (without scintillator, Ta=25 °C)

Parameter Symbol Condition Min. Typ. Max. Unit

Spectral response range λ - 190 to 1000 - nm

Peak sensitivity wavelength λp 720 - nm

Photo sensitivity S λ=500 nm - 0.26 - A/W

Dark current ID VR=10 mV - 2 50 pA

Terminal capacitance Ct VR=0 V, f=10 kHz - 950 - pF

■ X-ray sensitivity (reference value, tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 mm)

X-ray tube voltage Typ. Unit

120 kV 52 nA

Note) Depends on equipment and measurement conditions.

Avoid storing or using S8559 at high humidity because CsI scintillator has deliquescence.

Handling precautions

Si photodiode

S8559

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information described in this material is current as of June, 2011. Product specifications are subject to change without pr ior notice due to improvements or other reasons. Before assembly into final products, please contact us for the

delivery specification sheet to check the latest information.

Type numbers of products listed in the deliv ery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means dev elopmental specifications .

The product warranty is valid for one year after deliver y and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept

absolutely no liability for any loss caused by natural disasters or improper product use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Cat. No. KSPD1051E03

Jun. 2011 DN

10.1 ± 0.1

CsI (TI) 8.9

8.9 ± 0.1

CsI (TI)

7.9

2.0 ± 0.1

(10.5)

2.85

t=3.0

4.85

0.3

9.2 ± 0.3

7.4 ± 0.2

8.0 ± 0.3

ANODE

TERMINAL MARK

0.5

LEAD

PHOTOSENSITIVE

SURFACE

■ Terminal capacitance vs. reverse voltage■ Dark current vs. reverse voltage

■ Dimensional outline (unit: mm)

100 fA

1 pA

10 pA

100 pA

1 nA

0.01 0.1 1 10

REVERSE VOLTAGE (V)

DARK CURRENT

(Typ. Ta=25 ˚C)

KSPDB0152EA KSPDB0153EA

0.1

REVERSE VOLTAGE (V)

TERMINAL CAPACITANCE

100 pF

10 nF

1 nF

100 nF

110

(Typ. Ta=25 ˚C)

KSPDA0145EA