AO3409
30V P-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=-10V) -2.6A
R
DS(ON)
(at V
GS
=-10V) < 110mΩ
R
DS(ON)
(at V
GS
=-4.5V) < 180mΩ
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
A D
63 125
80
°C/W
R
θJA
V
Power Dissipation
B
P
D
Pulsed Drain Current
C
Continuous Drain
Current
T
A
=25°C W
1.4
T
A
=25°C A
-55 to 150
-2.6
-2.2
-20
1
T
A
=70°C
±20Gate-Source Voltage
T
A
=70°C I
D
The AO3409 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-30V
Drain-Source Voltage -30
70
100 90
°C
Thermal Characteristics UnitsParameter Typ Max
Junction and Storage Temperature Range
SOT23
Top View Bottom View
D
G
S
G
S
D
G
D
S
Rev 9: November 2010 www.aosmd.com Page 1 of 5
AO3409
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage -1.4 -1.9 -2.4 V
I
D(ON)
-20 A
77 110
T
J
=125°C 100 140
125 180 mΩ
g
FS
5 S
V
SD
-0.8 -1 V
I
S
-1.5 A
C
iss
197 240 pF
C
oss
42 pF
C
rss
26 37 pF
R
g
3.5 7.2 11.0 Ω
Q
g
(10V) 4.3 5.2 nC
Q
g
(4.5V) 2.2 3 nC
Q
gs
0.7 nC
Q
gd
1.1 nC
t
D(on)
7.5 ns
t
r
4.1 ns
t
D(off)
11.8 ns
t
f
3.8 ns
t
rr
11.3 14 ns
Q
rr
4.4 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
I
F
=-2.6A, dI/dt=100A/µs
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Body Diode Reverse Recovery Time
I
DSS
µA
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current V
DS
=V
GS
I
D
=-250µA
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
mΩ
Forward Transconductance
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-10V, I
D
=-2.6A
Reverse Transfer Capacitance
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-2.6A
V
GS
=-4.5V, I
D
=-2A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-2.6A
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-15V, R
L
=5.8Ω,
R
GEN
=3Ω
Total Gate Charge
Body Diode Reverse Recovery Charge I
F
=-2.6A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
Rev 9: November 2010 www.aosmd.com Page 2 of 5
AO3409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
2
4
6
8
10
0123456
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
-I
D
(A)
40
60
80
100
120
140
160
180
200
0 2 4 6 8 10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
-I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Normalized On-Resistance
V
GS
=-4.5V
I
D
=-2A
V
GS
=-10V
I
D
=-2.6A
60
100
140
180
220
260
300
2 4 6 8 10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-2.6A
25°C
125°C
0
3
6
9
12
15
012345
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
-I
D
(A)
V
GS
=-3.5V
-4V
-10V
-5V
-6V
-4.5V
-8V
Rev 9: November 2010 www.aosmd.com Page 3 of 5
AO3409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
012345
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Volts)
0
50
100
150
200
250
300
0 5 10 15 20 25 30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
V
DS
=-15V
I
D
=-2.6A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Power (W)
T
A
=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-V
DS
(Volts)
-I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
1s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
100
µ
s
10s
10ms
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJA
=125°C/W
100ms
Rev 9: November 2010 www.aosmd.com Page 4 of 5
AO3409
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Rev 9: November 2010
www.aosmd.com
Page 5 of 5