ABB Semiconductors AG reserves the right to change specifications without notice.
VDSM =2800 V
ITAVM =5490 A
ITRMS =8625 A
ITSM =75000 A
VT0 =0.86 V
rT=0.070 mΩ
Doc. No. 5SYA1050-01 Sep.00
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
Blocking
Part Number 5STP 45Q2800 5STP 45Q2600 5STP 45Q2200 Conditions
VDRM VRRM 2800 V 2600 V 2200 V f = 50 Hz, tp = 10ms
VRSM1 3000 V 2800 V 2400 V tp = 5 ms, single pulse
IDRM ≤ 400 mA VDRM
IRRM ≤ 400 mA VRRM Tj = 125°C
dV/dtcrit 1000 V/µs @ Exp. to 0.67xVDRM
Mechanical data
FMMounting force nom. 90 kN
min. 81 kN
max. 108 kN
aAcceleration
Device unclamped
Device clamped 50
100 m/s2
m/s2
mWeight 2.1 kg
DSSurface creepage distance 36 mm
DaAir strike distance 15 mm
Phase Control Thyristor
5STP 45Q2800
5STP 45Q2800
ABB Semiconductors AG reserves the right to change specifications without notice.
2 of 6Doc. No. 5SYA1050-01 Sep.00
On-state
ITAVM Max. average on-state current 5490 AHalf sine wave, TC = 70°C
ITRMS Max. RMS on-state current 8625 A
ITSM Max. peak non-repetitive 75000 Atp =10 ms Tj = 125°C
surge current 79000 Atp =8.3 ms After surge:
I2tLimiting load integral 28125 kA2stp =10 ms VD = VR = 0V
25900 kA2stp =8.3 ms
VTOn-state voltage 1.29 VIT=6000 A
VT0 Threshold voltage 0.86 VIT=3000 - 9000 ATj = 125°C
rTSlope resistance 0.070 mΩ
IHHolding current 40-100 mA Tj=25°C
20-75 mA Tj=125°C
ILLatching current 100-500 mA Tj=25°C
150-350 mA Tj=125°C
Switching
di/dtcrit Critical rate of rise of on-state 250 A/µs Cont. VD ≤ 0.67⋅VDRM Tj = 125°C
current 500 A/µs 60 sec. ITRM =3000 A f = 50 Hz
IFG =2.0 A tr = 0.5 µs
tdDelay time ≤3.0 µs VD = 0.4⋅VDRM IFG
=
2.0 A tr = 0.5 µs
≤400 µs V
D
≤ 0.67⋅V
DRM
ITRM =3000 A Tj = 125°CtqTurn-off time
dv
D
/dt = 20V/µs VR>200 V
Qrr Recovery charge min 4200 µAs di
T
/dt =-5 A/µs
max 6500 µAs
Triggering
VGT Gate trigger voltage 2.6 VTj = 25°C
IGT Gate trigger current 400 mA Tj = 25°C
VGD Gate non-trigger voltage 0.3 V VD=0.4⋅VDRM
IGD Gate non-trigger current 10 mA VD=0.4⋅VDRM
VFGM Peak forward gate voltage 12 V
IFGM Peak forward gate current 10 A
VRGM Peak reverse gate voltage 10 V
PGMaximum gate power loss 3W
5STP 45Q2800
ABB Semiconductors AG reserves the right to change specifications without notice.
3 of 6Doc. No. 5SYA1050-01 Sep.00
Thermal
Tj max Max. junction temperature 125°C
Tj stg Storage temperature
range -40...150°C
RthJC Thermal resistance 10 K/kW Anode side cooled
junction to case 10 K/kW Cathode side cooled
5K/kW Double side cooled
RthCH Thermal resistance case to 2K/kW Single side cooled
heat sink 1K/kW Double side cooled
Analytical function for transient thermal impedance:
)e-(1R = (t)Zn
1i
t/-
ithJC i
∑
=
τ
i1 2 3 4
Ri(K/kW) 3.27 0.736 0.661 0.312
τi(s) 0.5237 0.1082 0.02 0.0075
Fig. 1 Transient thermal impedance junction to case.
On-state characteristic model:
TTTT IDiCiBAV ⋅++⋅+⋅+= )1ln(
Valid for iT = 500 – 15000 A
A B C D
-0.096289 0.000051 0.135731 -0.001358
Fig 2. On-state characteristics. Fig. 3 On state characteristics.
5STP 45Q2800
ABB Semiconductors AG reserves the right to change specifications without notice.
4 of 6Doc. No. 5SYA1050-01 Sep.00
0 1000 2000 3000 4000 5000 6000 7000 8
0
0
0
I
T
A
V
(
A
)
70
75
80
85
90
95
100
105
110
115
120
125
130
T
case
(
°
C
)
D
C
1
8
0
°
r
e
c
t
a
n
g
u
l
a
r
1
8
0
°
s
i
n
e
1
2
0
°
r
e
c
t
a
n
g
u
l
a
r
5STP
45Q2800
Double-s
i
d
e
d
c
o
o
l
i
n
g
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn-on losses excluded. Fig. 5 Max. permissible case temperature vs. mean
on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
5STP 45Q2800
ABB Semiconductors AG reserves the right to change specifications without notice.
5 of 6Doc. No. 5SYA1050-01 Sep.00
Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current. Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
Turn –off time, typical parameter relationship.
Fig. 12 tq/tq1 = f1(Tj)Fig. 13 tq/tq1 = f2(-di/dt)Fig. 14 tq/tq1 = f3(dv/dt)
tq = tq1 • tq/tq1 f1(Tj) • tq/tq1 f2(-di/dt) • tq/tq1 f3(dv/dt) tq1 :at normalized values (see page 2)
tq : at varying conditions
5STP 45Q2800
Turn-on and Turn-off losses
Fig. 15 Won = f(IT, tP), Tj = 125°C.
Half sinusoidal waves. Fig. 16 Won = f(IT, di/dt), Tj = 125°C.
Rectangular waves.
Fig. 17 Woff = f(V0,IT), Tj = 125°C.
Half sinusoidal waves. tP = 10 ms. Fig. 18 Woff = f(V0,di/dt), Tj = 125°C.
Rectangular waves.
ABB Semiconductors reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email Info@ch.abb.com
Internet www.abbsem.com
Doc. No. 5SYA1050-01 Sep.00
