BCP 28, BCP 48 PNP Silicon Darlington Transistors * For general AF applications 4 * High collector current * High current gain * Complementary types: BCP 29/49 (NPN) 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00008 Type Marking Pin Configuration Package BCP 28 BCP 28 1=B 2=C 3=E 4=C SOT-223 BCP 48 BCP 48 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BCP 28 BCP 48 Collector-emitter voltage Unit VCEO 30 60 Collector-base voltage VCBO 40 80 Emitter-base voltage VEBO 10 10 DC collector current IC 500 mA Peak collector current ICM 800 mA Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 C Ptot 1.5 W Junction temperature Tj 150 C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction ambient 1) RthJA 75 Junction - soldering point RthJS 17 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu 1 Oct-20-1999 BCP 28, BCP 48 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BCP 28 30 - - BCP 48 60 - - BCP 28 40 - - BCP 48 80 - - 10 - - Collector-base breakdown voltage IC = 100 A, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector cutoff current nA ICBO VCB = 30 V, IE = 0 BCP 28 - - 100 VCB = 60 V, IE = 0 BCP 48 - - 100 Collector cutoff current A ICBO VCB = 30 V, IE = 0 , TA = 150 C BCP 28 - - 10 VCB = 60 V, IE = 0 , TA = 150 C BCP 48 - - 10 - - 100 Emitter cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain 1) IC = 100 A, VCE = 1 V BCP 28 4000 - - BCP 48 2000 - - BCP 28 10000 - - BCP 48 4000 - - BCP 28 20000 - - BCP 48 10000 - - BCP 28 4000 - - BCP 48 2000 - - DC current gain 1) IC = 100 mA, VCE = 5 V hFE DC current gain 1) IC = 500 mA, VCE = 5 V - hFE DC current gain 1) IC = 10 mA, VCE = 5 V - hFE hFE 1) Pulse test: t 300s, D = 2% 2 Oct-20-1999 BCP 28, BCP 48 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. VCEsat - - 1 VBEsat - - 1.5 fT - 200 - MHz Ccb - 8 - pF DC Characteristics Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t 300s, D = 2% 3 Oct-20-1999 BCP 28, BCP 48 Total power dissipation Ptot = f (TA*;TS ) Collector cutoff current ICBO = f (T A) * Package mounted on epoxy VCB = V CEmax Ptot 1.6 W 1.4 BCP 28/48 EHP00241 BCP 28/48 10 4 CBO EHP00242 nA max 10 3 1.2 1.0 10 2 0.8 TA 0.6 typ TS 10 1 0.4 0.2 0 0 50 100 C 10 0 150 0 50 100 C TA ; TS TA Transition frequency fT = f (IC) Permissible pulse load VCE = 5V Ptotmax / PtotDC = f (tp) 10 3 BCP 28/48 150 EHP00243 10 3 BCP 28/48 Ptot max 5 Ptot DC MHz fT EHP00244 D= tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 2 5 10 1 5 10 1 10 0 10 1 10 2 mA 10 10 0 10 -6 3 C 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Oct-20-1999 BCP 28, BCP 48 DC current gain hFE = f (IC ) Collector-emitter saturation voltage VCE = 5V IC = f (VCEsat), h FE = 1000 10 6 BCP 28/48 EHP00246 10 3 5 h FE BCP 28/48 EHP00247 C mA 125 C 10 5 150 C 25 C -50 C 10 2 25 C 5 5 -55 C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 10 0 mA 10 3 0 0.5 1.0 C V V CEsat Collector-base capacitance CCB = f (VCBO) Base-emitter saturation voltage Emitter-base capacitance CEB = f (VEBO ) IC = f (VBEsat), hFE = 1000 10 CEB0 (CCB0 ) BCP 28/48 1.5 EHP00248 10 3 C pF BCP 28/48 EHP00249 mA 150 C 25 C -50 C 10 2 5 CCB0 5 CEB0 10 1 5 0 10 -1 10 0 10 0 V 10 1 V EB0 (V CB0 ) 0 1.0 2.0 V 3.0 V BEsat 5 Oct-20-1999